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Laboratory of, China

Zhou H.,Key Laboratory of Artificial Micro | Fang G.,Key Laboratory of Artificial Micro | Jiang Q.,Wuhan University | Zhu Y.,Key Laboratory of Artificial Micro | And 7 more authors.
ACS Applied Materials and Interfaces | Year: 2012

High-quality Mn:ZnO (MZO) film had been prepared on N-GaN coated sapphire substrates followed by postdeposition thermal annealing treatment at 700 °C. For the annealed MZO/GaN heterojunction, a 15 nm cubic structural ZnGa 2O 4 layer was observed at the MZO/GaN interface through transmission electron microscope analysis. Through electroluminescence (EL) measurement, the formation of the nanointerface results in an EL transition from ultraviolet- to red-dominant mode for n-Mn:ZnO/N-GaN heterojunction light-emitting diodes (LEDs). The heterojunction LED showed a rectification ratio of ∼2.0 × 10 5 at ±2 V, a dark current of 3.5 nA at -2 V and a quite strong red EL with a low turn-on voltage of 3 V. On the basis of the energy band diagram, we think the EL transition from ultraviolet- to red-dominant mode is mainly due to the formation of a thin oxide blocking nanolayer at the MZO/GaN interface during the annealing process. © 2012 American Chemical Society. Source

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