Ji Q.,CAS Beijing National Laboratory for Molecular |
Zhang Y.,CAS Beijing National Laboratory for Molecular |
Guo Y.,Key Laboratory for the Physics and Chemistry of Nanodevices |
Ma D.,CAS Beijing National Laboratory for Molecular |
And 4 more authors.
Nano Letters | Year: 2015
Monolayer MoS2 prepared by chemical vapor deposition (CVD) has a highly polycrystalline nature largely because of the coalescence of misoriented domains, which severely hinders its future applications. Identifying and even controlling the orientations of individual domains and understanding their merging behavior therefore hold fundamental significance. In this work, by using single-crystalline sapphire (0001) substrates, we designed the CVD growth of monolayer MoS2 triangles and their polycrystalline aggregates for such purposes. The obtained triangular MoS2 domains on sapphire were found to distributively align in two directions, which, as supported by density functional theory calculations, should be attributed to the relatively small fluctuations of the interface binding energy around the two primary orientations. Using dark-field transmission electron microscopy, we further imaged the grain boundaries of the aggregating domains and determined their prevalent armchair crystallographic orientations with respect to the adjacent MoS2 lattice. The coalescence of individual triangular flakes governed by unique kinetic processes is proposed for the polycrystal formation. These findings are expected to shed light on the controlled MoS2 growth toward predefined domain orientation and large domain size, thus enabling its versatile applications in next-generation nanoelectronics and optoelectronics. © 2014 American Chemical Society. Source
Wang Z.,Key Laboratory for the Physics and Chemistry of Nanodevices |
Ding L.,Key Laboratory for the Physics and Chemistry of Nanodevices |
Pei T.,Key Laboratory for the Physics and Chemistry of Nanodevices |
Zhang Z.,Key Laboratory for the Physics and Chemistry of Nanodevices |
And 6 more authors.
Nano Letters | Year: 2010
A small band-gap carbon nanotube (SBG CNT) with a large diameter of 4 nm has been used to fabricate ambipolar field-effect transistors (FETs) with ultrahigh carrier mobility of more than 18 300 and 8300 cm2/V•s for holes and electrons, respectively. Using a top-gate device geometry with 12 nm HfO2 being the gate oxide, the SBG CNT-based FET exhibits an almost perfect symmetric ambipolar transfer characteristic without any noticeable hysteresis, and a highly efficient frequency doubler is constructed based on this near perfect ambipolar FET. The SBG CNT-based frequency doubler is shown to be able to operate in a large signal mode where the input AC signal, being applied to the top-gate electrode, drives the FET operating alternatively in a p- or n-region yielding an output signal at the drain electrode with doubled frequency and high conversion efficiency. For an input AC signal of 1 kHz, detailed frequency power spectrum analysis shows that more than 95% of the output signal is concentrated at the doubled frequency at 2 kHz, with a gain of more than 0.15, and this represents the highest gain so far achieved in carbon-based devices, including graphene-based devices. © 2010 American Chemical Society. Source