Tan Y.,Dalian University of Technology |
Tan Y.,Key Laboratory for Solar Energy Photovoltaic Systems of Liaoning Province |
Qin S.,Dalian University of Technology |
Qin S.,Key Laboratory for Solar Energy Photovoltaic Systems of Liaoning Province |
And 10 more authors.
Materials Science in Semiconductor Processing | Year: 2014
A new method for boron removal from silicon using electron beam injection (EBI) is proposed. After thermal oxidation on monocrystalline silicon (100) wafer at 1000°C for 1 h, EBI was used to induce thermal and negative charging effects to enhance boron diffusion in the oxide film and the silicon substrate. This facilitates boron removal from the silicon substrate. The boron concentration in samples was measured by secondary ion mass spectrometry. The results show that EBI reduced the boron concentration in the silicon substrate by 4.83%. © 2013 Elsevier Ltd. All rights reserved. Source