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Cheng C.,Shanxi Agricultural University | Cheng C.,Hunan University | Cheng C.,Key Laboratory for Micro Nano Physics and Technology of Hunan Province | Hu H.,Hunan University | And 4 more authors.
RSC Advances | Year: 2016

The band structures and electronic transport properties of AA-P2-doped armchair silicene nanoribbons (ASiNRs), with two phosphorus atoms substituting two adjacent silicon atoms in the same sublattice A, were investigated by applying density-functional theory in combination with the non-equilibrium Green's function method. The results proved that the adjustment of the location of AA-P2 dopants in 7-ASiNRs gives rise to semiconducting and metallic characteristics of systems. The low-bias negative differential resistance behaviors appeared to be symmetrical in AA-P2-doped ASiNR devices. However, the symmetry of negative differential resistance behaviors gradually declined with doping AA-P2 from the center to the edge of the nanoribbons. In addition, a striking rectifying behavior can be found. These outstanding properties indicate the potential application of SiNRs in nanodevices. © The Royal Society of Chemistry 2016. Source


Chen Y.,Hunan University | Chen Y.,Key Laboratory for Micro Nano Physics and Technology of Hunan Province | Hu H.-F.,Hunan University | Hu H.-F.,Key Laboratory for Micro Nano Physics and Technology of Hunan Province | And 6 more authors.
Wuli Xuebao/Acta Physica Sinica | Year: 2015

By using nonequilibrium Green's functions in combination with the first principles density functional theory, for the similar right triangle graphene devices as the research object, we take the zigzag graphene as electrodes, to investigate the B(N) doping and B-N co-doping effect, i.e. mainly the influence of doping on the transport properties of similar right triangle graphene devices, as well as the asymmetric doping effect on the rectifying behaviors in similar right triangle graphene devices. Calculated results show that the system conductivity is increased when the vertex carbon atom of a similar right triangle graphene is substituted by a boron or nitrogen atom, and a novel rectifying effect appears. The rectification behavior can be observed because of an asymmetric movement on the molecular-level in B(N) doping in the similar right triangle graphene devices under positive and negative biases and the asymmetry in the spatial distribution of the frontier orbitals. Most importantly, when the vertex carbon atoms of the right and left similar right triangle graphenes are simultaneously doped with boron and nitrogen atoms, the rectifying effect of the system is significantly enhanced and appears also a negative differential resistance effect. © 2015 Chinese Physical Society. Source


Chen Y.,Hunan University | Chen Y.,Key Laboratory for Micro Nano Physics and Technology of Hunan Province | Huang G.-F.,Hunan University | Huang G.-F.,Key Laboratory for Micro Nano Physics and Technology of Hunan Province | And 10 more authors.
Materials Letters | Year: 2012

The development of high-efficiency ZnS photocatalyst is of great importance from scientific and practical viewpoints. We investigate the effects of annealing on the photocatalytic activity of ZnS films prepared using chemical bath deposition. The increasing of annealing temperature and heating rate increases the crystallinity and the mean grain size of ZnS films, and significantly enhances the absorption in the visible region. The annealed ZnS films exhibit considerable visible light photocatalytic activity, which is associated with the presence of sulfur vacancies, the larger size grain, and the higher crystallinity. © 2012 Elsevier B.V. All rights reserved. Source

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