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Zhang H.Z.,CAS Ningbo Institute of Material Technology and Engineering | Cao H.T.,CAS Ningbo Institute of Material Technology and Engineering | Chen A.H.,CAS Ningbo Institute of Material Technology and Engineering | Liang L.Y.,CAS Ningbo Institute of Material Technology and Engineering | And 3 more authors.
Solid-State Electronics | Year: 2010

We report on the fabrication of bottom-gate thin-film transistors (TFTs) using indium-oxide (In2O3) thin films as active channel layers. The films were deposited on thermally grown silicon dioxide (SiO2)/n-type silicon (Si) at room temperature (RT) by radio-frequency (RF) magnetron sputtering. The effect of deposition pressure on the performance of In2O3-TFTs was investigated in detail. A significant improvement of the device performance was observed for In2O3-TFTs with the decrease of the working pressure, which is attributed to enhanced densification, better surface morphology of the In2O3 channel layers prepared at lower deposition pressure. The fabricated TFT with optimal device performance exhibited a field-effect mobility (μFE) of 31.6 cm2 V-1 s-1, a drain current on/off ratio of ∼107, a low off drain current of about 10-10 A and a threshold voltage of 7.8 V. Good device performance and low processing temperature make the In2O3-TFTs suitable for the potential applications in the transparent electronics. © 2009 Elsevier Ltd. All rights reserved. Source


Peng X.-F.,Key Laboratory for Micro Nano Optoelectronic Devices | Chen K.-Q.,Key Laboratory for Micro Nano Optoelectronic Devices
Physica E: Low-Dimensional Systems and Nanostructures | Year: 2010

Ballistic thermal transport properties at low temperatures in a quantum wire modulated with two coupling quantum dots are studied. The results show that when the temperature is low enough, the reduced thermal conductance displays monotonic behavior with the change of structural parameters; while at higher temperature, the reduced thermal conductance displays a nonlinear behavior. It is found that the phonon transmission and thermal conductance sensitively depend on the relative position of quantum dots and symmetric axis of the quantum wire. When the symmetry axis of quantum wire is away from the center of the quantum dots, the thermal conductance increases monotonously. It is also found that the thermal conductance can be modulated by the magnitude of the quantum dots and the length between the two quantum dots. Moreover, inhomogeneous quantum transport steps and quantized thermal conductance plateau can be observed in such structure. © 2010 Elsevier B.V. All rights reserved. Source


Fan Z.-Q.,Key Laboratory for Micro Nano Optoelectronic Devices | Chen K.-Q.,Key Laboratory for Micro Nano Optoelectronic Devices
Physica E: Low-Dimensional Systems and Nanostructures | Year: 2010

By applying first-principles quantum transport calculations, we investigate the transport properties of the oligo(p-phenylenevinylene)s molecular devices modulated with different side groups. The calculated results show that for the system modulated with - NH2, the highest occupied molecular orbital is localized, while for the system modulated with - NO2, the lowest unoccupied molecular orbital is localized. The electron transport will be enhanced when modulated only with - NH2 or - NO2, but will be weakened when modulated with both - NH2 and - NO2. Negative differential resistance is observed in the system modulated with two - NH2. A mechanism for the negative differential resistance behavior is suggested. © 2009. Source


Zhu X.M.,Key Laboratory for Micro Nano Optoelectronic Devices | Zhu X.M.,Hunan University | Xu M.,Key Laboratory for Micro Nano Optoelectronic Devices | Xu M.,Hunan University | Liu Q.H.,Hunan University
International Journal of Geometric Methods in Modern Physics | Year: 2010

It is demonstrated that the Cartesian momenta and positions offer a proper description for the motion of particles constrained on the surface of a sphere. In classical limit, their mean values on the classical wave packet go over to classical quantities. © 2010 World Scientific Publishing Company. Source


Xiao W.-Z.,Key Laboratory for Micro Nano Optoelectronic Devices | Xiao W.-Z.,Hunan Institute of Engineering | Wang L.-L.,Key Laboratory for Micro Nano Optoelectronic Devices | Xu L.,Key Laboratory for Micro Nano Optoelectronic Devices | And 2 more authors.
Solid State Communications | Year: 2010

The electronic structures and magnetic properties in Carbon-doped CeO2 have been investigated by means of first-principles calculations based on the LSDA+U scheme. The results demonstrate a magnetic moment of 2.00 μB per supercell with one Carbon dopant which mainly stems from Hund's rule coupling based on rather localized 2p, 5d and 4f states. The hole-mediated long-range magnetic coupling between local magnetic moments can be attributed to the collective effects of the p-p, p-d, and p-f hybridizations between C and neighboring O or Ce atoms. Ferromagnetism and half-metallic characteristics of C-doped CeO2 make it possible to be an ideal material for spintronic devices. Crown Copyright © 2010. Source

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