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Yong In, South Korea

Cho J.,Ecole Polytechnique - Palaiseau | Cho J.,KCC Corporation | O'Donnell B.,Ecole Polytechnique - Palaiseau | O'Donnell B.,Total S.A. | And 5 more authors.
Progress in Photovoltaics: Research and Applications | Year: 2013

We present a single pump-down process to texture hydrogenated amorphous silicon solar cells. Mats of p-type crystalline silicon nanowires were grown to lengths of 1 μm on glass covered with flat ZnO using a plasma-assisted Sn-catalyzed vapor-liquid-solid process. The nanowires were covered with conformal layers of intrinsic and n-type hydrogenated amorphous silicon and a sputtered layer of indium tin oxide. Each cell connects in excess of 10 7 radial junctions over areas of 0.126 cmÂ. Devices reach open-circuit voltages of 0.8 V and short-circuit current densities of 12.4 mA cm-2, matching those of hydrogenated amorphous silicon cells deposited on textured substrates. Copyright © 2012 John Wiley & Sons, Ltd. Source


Chung H.-J.,University of Pennsylvania | Chung H.-J.,University of Illinois at Urbana - Champaign | Kim J.,University of Pennsylvania | Kim J.,KCC Corporation | And 2 more authors.
ACS Macro Letters | Year: 2012

This paper investigates controlling the location of nanoparticles (NPs) in a phase-separated polymer blend of deuterated poly(methyl methyl methacrylate) (dPMMA) and poly- (styrene-ran-acrylonitrile) (SAN). Silica NPs are grafted with PMMA brushes having molecular weights of 1800, 21000, and 160000 at fixed grafting density. Using ion beam milling combined with SEM imaging, NP location and morphology are investigated for blends containing 10 wt % NP. With increasing brush length, the NPs are found to segregate to the dPMMA/SAN interface, partition between the interface and dPMMA phase, or locate in the dPMMA phase, respectively. © 2011 American Chemical Society. Source


The present invention relates to a dark neutral gray glass composition with a low transmittance, and a glass formed therefrom, and more specifically, to a dark neutral gray glass composition with a low transmittance and a low color purity, wherein an appropriate amount of Fe


Patent
Kcc Corporation | Date: 2010-11-08

Provided is a method of purifying monosilane. More particularly, the method includes removing impurities from a crude material containing monosilane and ethylene by fractional distillation (operation 1), and removing ethylene and residual impurities by passing the crude material purified in operation 1 through activated carbon (operation 2). According to the method, high-purity monosilane may be more simply and effectively obtained without additional production of byproducts by selectively adsorbing ethylene, which is difficult to separate by fractional distillation, using an activated carbon.


Patent
Kcc Corporation | Date: 2010-12-14

The present invention relates to an apparatus for adjusting a position of a plasma arc torch. The apparatus includes an elevation apparatus configured to raise and lower the plasma arc torch with respect to molten silicon, a rotary apparatus configured to circumferentially rotate the plasma arc torch with respect to the molten silicon, and an angle adjustment apparatus configured to adjust an angle of the plasma arc torch with respect to the molten silicon. In addition, a plurality of plasma arc torches is provided and radially disposed at predetermined intervals. Therefore, time consumed to melt solid silicon to form the initial molten silicon is reduced, and casting speed is increased. In addition, fusibility of a source material can be improved, the source material can be stably melted, and economic continuous casting and a high quality silicon ingot for a solar cell can be manufactured.

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