Yokohama-shi, Japan
Yokohama-shi, Japan

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Inoue M.,Wakayama University | Ohta T.,Meijo University | Takota N.,Wakayama University | Tsuchitani S.,Wakayama University | And 6 more authors.
Japanese Journal of Applied Physics | Year: 2012

The behaviors of Pb and metastable He atoms in the multi-micro hollow cathode lamp (multi-MHCL) at pressures of the order of kPa have been investigated by diode laser absorption spectroscopy. The pressure broadening effect for absorption line-profile was overlapped to Doppler profile and was estimated to be 0.26 MHz/Pa from line-profiles of metastable He atoms in the range from 5 to 10 kPa. The translational temperatures of metastable He atoms decreased from 830 to 410 K with increasing the pressure from 5 to 10 kPa. From line-profiles of Pb atoms, the temperatures and densities of Pb in the multi-MHCL were evaluated to decrease from 820 to 610 K and 9:0 × 10 11 to 4:6 × 10 11 cm -3 with increasing He pressure from 4.9 to 7.4 kPa, respectively. The Lorentz broadenings was larger than those of He atom and the pressure dependence were estimated to be 0.22 MHz/Pa. The behaviors of emission intensities corresponded with those of atomic densities due to enhancement of sputtering. From these results, the multi-MHCL with line-profile guaranteed has been realized for measuring multi-metallic atom densities precisely. © 2012 The Japan Society of Applied Physics.


Hara Y.,Osaka University | Takeda K.,Nagoya University | Yamakawa K.,Katagiri Engineering Co. | Den S.,Katagiri Engineering Co. | And 3 more authors.
Applied Physics Express | Year: 2012

Nitriding of polyethylene naphthalate (PEN) has been carried out at room temperature using a nitrogen neutral beam with kinetic energy of less than 100 eV. The surface hardness of nitrided samples increased to two times that of the untreated sample, when the acceleration voltage was between 30 and 50 V. The thickness of the hardened polymer layer was estimated to be 1 μm. It was concluded that the hardness enhancement was caused by the diffusion of nitrogen atoms into the polymer. © 2012 The Japan Society of Applied Physics.


Takahashi S.,Katagiri Engineering Co. | Kawauchi R.,COM Electronics Development Co. | Takashima S.,Nagoya Urban Industries Promotion Corporation | Den S.,Katagiri Engineering Co. | And 8 more authors.
Japanese Journal of Applied Physics | Year: 2012

The optimum conditions for a plasma etching device are generally determined from the results of etching a sample while varying an external parameter (e.g., gas mass flow, gas mixing ratio, process chamber pressure, or plasma source power). However, to realize controlled plasma etching with few fluctuations on a subnanometer scale, it is essential to develop a system that is controlled in real-time based on internal plasma parameters (e.g., densities and energies of radicals and ions), which directly determine process characteristics, rather than external plasma parameters. We have developed an autonomously controlled plasma etching system that performs integrated monitoring of radicals in the gas phase and on the surface of films. The etching rate of organic materials could be autonomously controlled based on hydrogen and nitrogen radical densities obtained in real-time. © 2012 The Japan Society of Applied Physics.


Inoue M.,Wakayama University | Ohta T.,Meijo University | Takota N.,Wakayama University | Tsuchitani S.,Wakayama University | And 6 more authors.
Japanese Journal of Applied Physics | Year: 2012

Indium-zinc-oxide (IZO) films were synthesized by radio frequency magnetron sputtering. In order to clarify the mechanisms of IZO film formation, the absolute densities of In and Zn atoms were measured simultaneously by absorption spectroscopy employing the multi-micro hollow cathode lamp. Their densities were measured to be 10 9 to 10 11 cm -3 and increased with pressure from 1 to 10 Pa. The density ratios of In to Zn in the gas phase corresponded to the ratios of film composition, and the relative amount of Zn atom increased with decreasing pressure. Carrier density increased with decreasing density ratio of In to Zn owing to the increase in the number of oxygen vacancies, which was clarified from the O 1s spectra obtained by X-ray photoelectron spectroscopy. A low resistivity of 10 -6 ωm and an optical transmission of over 80% in the visible region were achieved at a pressure of 1 Pa. © 2012 The Japan Society of Applied Physics.


Kawai Y.,Nagoya University | Chen S.,Nagoya University | Honda Y.,Nagoya University | Yamaguchi M.,Nagoya University | And 7 more authors.
Physica Status Solidi (C) Current Topics in Solid State Physics | Year: 2011

The key issue in GaN growth by radio-frequency plasma-assisted molecular beam epitaxy is the low growth rate compared with that obtained using an ammonia source. To reduce the processing time and to improve the crystalline quality of the epilayer, a high-density radical source (HDRS) with high stability has been developed. The growth rate of the GaN epilayer was improved using the HDRS rather than a conventional radical source. During the growth, a sharp streak pattern obtained by reflection high-energy electron diffraction was maintained. An atomically smooth surface was confirmed by atomic force microscopy observation. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.


Chen S.,Nagoya University | Kondo H.,Nagoya University | Ishikawa K.,Nagoya University | Takeda K.,Nagoya University | And 4 more authors.
Japanese Journal of Applied Physics | Year: 2011

For an innovation of molecular-beam-epitaxial (MBE) growth of gallium nitride (GaN), the measurements of absolute densities of N, H, and NH 3 at the remote region of the radical source excited by plasmas have become absolutely imperative. By vacuum ultraviolet absorption spectroscopy (VUVAS) at a relatively low pressure of about 1 Pa, we obtained a N atom density of 9 × 1012 cm-3 for a pure nitrogen gas used, a H atom density of 7 × 1012 cm-3 for a gas composition of 80% hydrogen mixed with nitrogen gas were measured. The maximum density 2 × 1013 cm-3 of NH3 was measured by quadruple mass spectrometry (QMS) at H2/(N2 + H 2) = 60%. Moreover, we found that N atom density was considerably affected by processing history, where the characteristic instability was observed during the pure nitrogen plasma discharge sequentially after the hydrogen-containing plasma discharge. These results indicate imply the importance of establishing radical-based processes to control precisely the absolute densities of N, H, and NH3 at the remote region of the radical source. © 2011 The Japan Society of Applied Physics.


Patent
Nagoya University, NU Eco Engineering Co. and Katagiri Engineering Co. | Date: 2013-07-03

[Object] To provide a radical generator which can produce radicals at higher density. [Means for Solution] The radical generator includes a supply tube 10 made of SUS, a hollow cylindrical plasma-generating tube 11 which is connected to the supply tube 10 and which is made of pyrolytic boron nitride (PBN). A cylindrical CCP electrode 13 is disposed outside the plasma-generating tube 11. A coil 12 is provided so as to wind about the outer circumference of the plasma-generating tube at the downstream end of the CCP electrode 13. A parasitic-plasma-preventing tube 15 made of a ceramic material is inserted into an opening of the supply tube 10 at the connection site between the supply tube 10 and the plasma-generating tube 11.


Patent
Nagoya University, NU ECO Engineering Co. and Katagiri Engineering Co. | Date: 2016-08-19

A molecular beam epitaxy apparatus includes a radical generator for generating a radical species, a molecular beam cell for generating a molecular beam or an atomic beam, and a vacuum chamber for accommodating a substrate therein, in use, the substrate being irradiated with the radical species and the molecular beam or the atomic beam in vacuum, to thereby form, on the substrate, a crystal of a compound derived from the element of the radical species and the element of the molecular beam or the atomic beam.


Patent
KATAGIRI Engineering Co and NU Eco Engineering Co. | Date: 2011-08-24

[Object] To provide a radical generator which can produce radicals at higher density. [Means for Solution] The radical generator includes a supply tube 10 made of SUS, a hollow cylindrical plasma-generating tube 11 which is connected to the supply tube 10 and which is made of pyrolytic boron nitride (PBN). A cylindrical CCP electrode 13 is disposed outside the plasma-generating tube 11. A coil 12 is provided so as to wind about the outer circumference of the plasma-generating tube at the downstream end of the CCP electrode 13. A parasitic-plasma-preventing tube 15 made of a ceramic material is inserted into an opening of the supply tube 10 at the connection site between the supply tube 10 and the plasma-generating tube 11.

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