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Yokohama-shi, Japan

Inoue M.,Wakayama University | Ohta T.,Meijo University | Takota N.,Wakayama University | Tsuchitani S.,Wakayama University | And 6 more authors.
Japanese Journal of Applied Physics | Year: 2012

Indium-zinc-oxide (IZO) films were synthesized by radio frequency magnetron sputtering. In order to clarify the mechanisms of IZO film formation, the absolute densities of In and Zn atoms were measured simultaneously by absorption spectroscopy employing the multi-micro hollow cathode lamp. Their densities were measured to be 10 9 to 10 11 cm -3 and increased with pressure from 1 to 10 Pa. The density ratios of In to Zn in the gas phase corresponded to the ratios of film composition, and the relative amount of Zn atom increased with decreasing pressure. Carrier density increased with decreasing density ratio of In to Zn owing to the increase in the number of oxygen vacancies, which was clarified from the O 1s spectra obtained by X-ray photoelectron spectroscopy. A low resistivity of 10 -6 ωm and an optical transmission of over 80% in the visible region were achieved at a pressure of 1 Pa. © 2012 The Japan Society of Applied Physics. Source


Inoue M.,Wakayama University | Ohta T.,Meijo University | Takota N.,Wakayama University | Tsuchitani S.,Wakayama University | And 6 more authors.
Japanese Journal of Applied Physics | Year: 2012

The behaviors of Pb and metastable He atoms in the multi-micro hollow cathode lamp (multi-MHCL) at pressures of the order of kPa have been investigated by diode laser absorption spectroscopy. The pressure broadening effect for absorption line-profile was overlapped to Doppler profile and was estimated to be 0.26 MHz/Pa from line-profiles of metastable He atoms in the range from 5 to 10 kPa. The translational temperatures of metastable He atoms decreased from 830 to 410 K with increasing the pressure from 5 to 10 kPa. From line-profiles of Pb atoms, the temperatures and densities of Pb in the multi-MHCL were evaluated to decrease from 820 to 610 K and 9:0 × 10 11 to 4:6 × 10 11 cm -3 with increasing He pressure from 4.9 to 7.4 kPa, respectively. The Lorentz broadenings was larger than those of He atom and the pressure dependence were estimated to be 0.22 MHz/Pa. The behaviors of emission intensities corresponded with those of atomic densities due to enhancement of sputtering. From these results, the multi-MHCL with line-profile guaranteed has been realized for measuring multi-metallic atom densities precisely. © 2012 The Japan Society of Applied Physics. Source


Patent
KATAGIRI Engineering Co and NU Eco Engineering Co. | Date: 2011-08-24

[Object] To provide a radical generator which can produce radicals at higher density. [Means for Solution] The radical generator includes a supply tube


Chen S.,Nagoya University | Kondo H.,Nagoya University | Ishikawa K.,Nagoya University | Takeda K.,Nagoya University | And 4 more authors.
Japanese Journal of Applied Physics | Year: 2011

For an innovation of molecular-beam-epitaxial (MBE) growth of gallium nitride (GaN), the measurements of absolute densities of N, H, and NH 3 at the remote region of the radical source excited by plasmas have become absolutely imperative. By vacuum ultraviolet absorption spectroscopy (VUVAS) at a relatively low pressure of about 1 Pa, we obtained a N atom density of 9 × 1012 cm-3 for a pure nitrogen gas used, a H atom density of 7 × 1012 cm-3 for a gas composition of 80% hydrogen mixed with nitrogen gas were measured. The maximum density 2 × 1013 cm-3 of NH3 was measured by quadruple mass spectrometry (QMS) at H2/(N2 + H 2) = 60%. Moreover, we found that N atom density was considerably affected by processing history, where the characteristic instability was observed during the pure nitrogen plasma discharge sequentially after the hydrogen-containing plasma discharge. These results indicate imply the importance of establishing radical-based processes to control precisely the absolute densities of N, H, and NH3 at the remote region of the radical source. © 2011 The Japan Society of Applied Physics. Source


Takahashi S.,Katagiri Engineering Co. | Kawauchi R.,COM Electronics Development Co. | Takashima S.,Nagoya Urban Industries Promotion Corporation | Den S.,Katagiri Engineering Co. | And 8 more authors.
Japanese Journal of Applied Physics | Year: 2012

The optimum conditions for a plasma etching device are generally determined from the results of etching a sample while varying an external parameter (e.g., gas mass flow, gas mixing ratio, process chamber pressure, or plasma source power). However, to realize controlled plasma etching with few fluctuations on a subnanometer scale, it is essential to develop a system that is controlled in real-time based on internal plasma parameters (e.g., densities and energies of radicals and ions), which directly determine process characteristics, rather than external plasma parameters. We have developed an autonomously controlled plasma etching system that performs integrated monitoring of radicals in the gas phase and on the surface of films. The etching rate of organic materials could be autonomously controlled based on hydrogen and nitrogen radical densities obtained in real-time. © 2012 The Japan Society of Applied Physics. Source

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