Suigen, South Korea
Suigen, South Korea
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Baek R.-H.,SEMATECH | Kim D.-H.,SEMATECH | Kim D.-H.,Globalfoundries | Kim T.-W.,SEMATECH | And 10 more authors.
Digest of Technical Papers - Symposium on VLSI Technology | Year: 2014

In this paper, we conducted the sub 7nm technology benchmarking for logic application using performance comparison between III-V multi-gate(double, tri, gate-all-around) nMOSFET and Si nFinFET. The benchmarking was executed based on the physical parameters extracted from Virtual-Source(VS) modeling and well-calibrated TCAD simulation. Especially by quantitatively investigating fin width(Wfin) and interface trap(Dit) effects on electrostatic of III-V multi-gate(MG) nMOSFET which is critical to device scaling, we proposed a device design strategy for sub 7nm technology node. © 2014 IEEE.

Kim D.-H.,SEMATECH | Kim D.-H.,Globalfoundries | Kim T.-W.,SEMATECH | Baek R.,SEMATECH | And 13 more authors.
Technical Digest - International Electron Devices Meeting, IEDM | Year: 2015

High-mobility III-V transistors are poised to take the lead on future high performance logic operation. If this happens, indium-rich InxGa1-xAs is the most promising n-channel material. Indeed, remarkable progress has been made, including III-V gate-stacks with ALD-grown gate dielectrics. This paper reviews the evolution of high-performance III-V devices for future logic applications and discuss a possible path forward to further improve their logic figure-of-merits. © 2014 IEEE.

Kim T.-W.,SEMATECH | Koh D.,SEMATECH | Kwon H.,SEMATECH | Shin C.-S.,KANC | And 9 more authors.
Applied Physics Express | Year: 2014

We have successfully demonstrated In0.7Ga0.3As quantum well (QW) MOSFETs with Al2O3/HfO2 toward a subthreshold swing of ∼60mV/decade. The fabricated In 0.7Ga0.3As QW MOSFET with Lg = 5 μm exhibits an excellent subthreshold swing of 69mV/dec and a drain-induced barrier lowering (DIBL) of less than 10mV/V at VDS = 0.5V with EOT ∼0.8 nm. On the basis of measured C-V and I-V data, we extracted the effective mobility (μn,eff) from our long-channel InGaAs QW MOSFET, yielding an excellent μn,eff of approximately 3,400cm2V -1 s-1 at 300 K. © 2014 The Japan Society of Applied Physics.

Shin C.-S.,KANC | Park W.-K.,KANC | Shin S.,Yonsei University | Cho Y.,Yonsei University | And 9 more authors.
Digest of Technical Papers - Symposium on VLSI Technology | Year: 2014

This paper reports on gate-last (GL) In0.7Ga0.3As QW MOSFETs with regrown S/D by MOCVD. Long-channel devices exhibit excellent electrostatics and carrier transport (SS=80mV/dec., DIBL=22mV/V, and μn,eff>5,500 cm2/V-s at 300k). Short-channel device with Lg = 40 nm also exhibit excellent electrostatic integrity of SS = 105 mV/dec., and DIBL = 150 mV/V, together with gm-max = 2 mS/μm at VDS = 0.5 V. This record performance is achieved by using a low Dit and Al2O3/HfO2 gate stack with EOT ∼ 1-nm, optimized selective S/D regrowth with MOCVD, and GL process. © 2014 IEEE.

Oh I.,K.A.N.C. | Kye J.,Myongji University | Hwang S.,Myongji University
International Journal of Electrochemical Science | Year: 2011

The growth kinetics of a self-assembled monolayer (SAM) in solution was measured in situ in real time electrochemistry using microelectrode. The steady-state current produced by the oxidation of ferrocene in the presence of a microelectrode was recorded as a function of time. Introduction of 11-mercaptoundecanoic acid (MUA) into the electrochemical cell produced a decrease in the steady-state current related to formation of an insulating MUA SAM. The current decrease permitted monitoring of the SAM coverage formation over time. The time constants derived from fitting the time-dependent current to the rearrange-limited Langmuir model agreed well with previously reported results determined using other techniques, demonstrating that our simple method can reliably characterize SAM adsorption kinetics. © 2011 by ESG.

Oh I.,K.A.N.C. | Kye J.,K.A.N.C. | Kye J.,Myongji University | Hwanga S.,K.A.N.C. | Hwanga S.,Myongji University
Bulletin of the Korean Chemical Society | Year: 2011

Porous silicon with a complex network of nanopores is utilized for photoelectrochemical energy conversion. A novel electroless Pt deposition onto porous silicon is investigated in the context of photoelectrochemical hydrogen generation. The electroless Pt deposition is shown to improve the characteristics of the PS photoelectrode toward photoelectrochemical H + reduction, though excessive Pt deposition leads to decrease of photocurrent. Furthermore, it is found that a thin layer (< 10 μm) of porous silicon can serve as anti-reflection layer for the underlying Si substrate, improving photocurrent by reducing photon reflection at the Si/liquid interface. However, as the thickness of the porous silicon increases, the surface recombination on the dramatically increased interface area of the porous silicon begins to dominate, diminishing the photocurrent.

Oh I.,K.A.N.C. | Kye J.,Myongji University | Hwang S.,Myongji University
Nano Letters | Year: 2012

Herein we report that silicon nanowires (SiNWs) fabricated via metal-catalyzed electroless etching yielded a photoelectrochemical hydrogen generation performance superior to that of a planar Si, which is attributed to a lower kinetic overpotential due to a higher surface roughness, favorable shift in the flat-band potential, and light-trapping effects of the SiNW surface. The SiNW photocathode yielded a photovoltage of 0.42 V, one of the highest values ever reported for hydrogen generation on p-type Si/electrolyte interfaces. © 2011 American Chemical Society.

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