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Ishikawa, Japan

Kanazawa Institute of Technology is an institution of higher learning in Japan. It is often called KIT, koudai or Kinko for short.It is known for its unique educational policy that attaches importance to initiative of students. One of the examples is Yumekobo , coined from yume , kō and kōbō , where students take parts in their projects and research on solar cars, universal design, etc. Wikipedia.


A Kβ satellite peak in X-ray fluorescence (XRF) spectra is observed as a counterpart of the pre-edge peak of the X-ray absorption near edge structure (XANES). In Kβ emission of chromium, a small satellite peak is observed at 5.983-5.988 keV only for hexavalent chromium compounds such as CrO(3), Na(2)CrO(7)·2H(2)O, Na(2)CrO(4)·4H(2)O, K(2)Cr(2)O(7), K(2)CrO(4), Zn(2)CrO(4)(OH)(2)·2H(2)O, PbCrO(4), and BaCrO(4), together with the main peak at 5.947 keV, while trivalent chromium compounds such as Cr(2)O(3) and Cr(OH)(3)·nH(2)O show only the main peak at 5.947 keV. This corresponds to the fact that the K pre-edge peak in XANES is observed only for the hexavalent chromium compounds. The electronic level causing the satellite peak is almost at the same energy level as that causing the pre-edge peak. Our finding not only affects the interpretation of the origin of the pre-edge peaks but also leads to the simple speciation method of chromium compounds using XRF. Source


Yamaguchi A.A.,Kanazawa Institute of Technology
Physica Status Solidi (B) Basic Research | Year: 2010

It is known that emission polarization in AlGaN quantum wells (QWs) on c-plane substrates switches from in-plane polarization to c-axis polarization with increasing Al composition. This behaviour is unfavourable for light extraction from c-plane based light emitting diodes (LEDs). Previously, we proposed theoretically that this unfavourable polarization can be changed into favourable in-plane polarization by decreasing well width and/or introduction of compressive strain in c-oriented AlGa-NQWs. In this work, we have investigated the substrate orientation dependence of polarization properties in such AlGaNQWs by numerical calculation using the 6×6 k-p Hamiltonian. It is shown that even small inclination of c-plane substrate makes a drastic change in the polarization characteristics and that the use of the vicinal substrates as well as semipolar and nonpolar substrates could be beneficial in improving optical device performance. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. Source


Ozaki I.,Aomori University of Health and Welfare | Hashimoto I.,Kanazawa Institute of Technology
Clinical Neurophysiology | Year: 2011

A brief review of previous studies is presented on high frequency oscillations (HFOs)>300. Hz overlying the cortical response in the somatosensory evoked potential (SEP) or magnetic field (SEF) in humans as well as other mammals. The characteristics of somatosensory HFOs are described about reproducibility and origin (area 3b and 1) of the HFOs, changes during a wake-sleep cycle, effects of stimulus rate or tactile interference, and pharmacological effects. Also, several hypotheses on the neural mechanisms of the HFOs are reconsidered; the early HFO burst is probably generated from action potentials of thalamocortical fibers at the time when they arrive at the area 3b (and 1), since this component is resistant to higher stimulus rate >10. Hz, general anesthesia, or application of glutamatergic receptor antagonist: by contrast, the late HFO burst is sensitive to higher stimulus rate and eliminated after application of glutamatergic receptor antagonist, reflecting activities of a postsynaptic neural network in areas 3b and 1 of the somatosensory cortex. In view of physiological features of the somatosensory HFOs and their pathological or pharmacological changes, possible mechanisms of the late HFO burst genesis are discussed: a fast-spiking interneuron hypothesis, a fast pyramidal cell IPSP hypothesis and a chattering cell hypothesis. © 2011 International Federation of Clinical Neurophysiology. Source


Minami T.,Kanazawa Institute of Technology
Semiconductors and Semimetals | Year: 2013

Transparent and conductive oxide (TCO) thin films are used practically for various application fields; in particular, the market for transparent electrodes used in touch panels, flat panel displays or lamps, and thin-film solar cells has been expanding recently. Many TCO materials composed of n-type metal oxide semiconductors have been investigated for more than 40 years. Various obtainable properties in TCO thin films can be controlled by the choice of host (matrix) material as well as the kind and content of doped impurity. TCO thin-film materials such as impurity-doped ZnO, In2O3, and SnO2 as well as multicomponent oxides composed of combinations of these binary compounds are the best candidates for practical use as transparent electrodes. The carrier transport and optical properties in polycrystalline TCO thin films with a carrier concentration on the order of 1020-1021cm-3, that is, degenerated n-type semiconductors, have been explained by combining experimental results with theoretical analyses. © 2013 Elsevier Inc. Source


Yamaguchi A.A.,Kanazawa Institute of Technology
Applied Physics Letters | Year: 2010

The optical polarization properties of Al-rich AlGaN thin quantum wells on AlN substrates with various substrate orientations are numerically calculated using a 6×6 k·p Hamiltonian. The calculation results show that the predominant polarization direction abruptly switches from the in-plane direction to the c -axis direction at an Al composition of ∼0.76 in quantum wells on c -plane substrates. It is also shown that the polarization characteristics drastically change by small inclination of the substrates due to valence band mixing effects. It is found that the use of the vicinal substrates as well as semipolar and nonpolar substrates could be beneficial in improving optical device performance. © 2010 American Institute of Physics. Source

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