Forschungszentrum Jülich GmbH is a member of the Helmholtz Association of German Research Centres and is one of the largest interdisciplinary research centres in Europe. It was founded on 11 December 1956 by the state of North Rhine-Westphalia as a registered association, before it became "Kernforschungsanlage Jülich GmbH" or Nuclear Research Centre Jülich in 1967. In 1990, the name of the association was changed to "Forschungszentrum Jülich GmbH". It has close collaborations with RWTH Aachen in the form of Jülich-Aachen Research Alliance . Wikipedia.
Jones R.O.,Julich Research Center
Reviews of Modern Physics
In little more than 20 years, the number of applications of the density functional (DF) formalism in chemistry and materials science has grown in an astonishing fashion. The number of publications alone shows that DF calculations make up a huge success story, and many younger colleagues are surprised to learn that the widespread application of density functional methods, particularly in chemistry, began only after 1990. This is indeed unexpected, because the origins are usually traced to the papers of Hohenberg, Kohn, and Sham more than a quarter of a century earlier. The DF formalism, its applications, and prospects were reviewed for this journal in 1989. About the same time, the combination of DF calculations with molecular dynamics promised to provide an efficient way to study structures and reactions in molecules and extended systems. This paper reviews the development of density-related methods back to the early years of quantum mechanics and follows the breakthrough in their application after 1990. The two examples from biochemistry and materials science are among the many current applications that were simply far beyond expectations in 1990. The reasons why - 50 years after its modern formulation and after two decades of rapid expansion - some of the most cited practitioners in the field are concerned about its future are discussed. © 2015 American Physical Society. Source
Jülich Research Center | Date: 2013-03-13
An electronic component comprising a Josephson junction and a method for producing the same are proposed. The component comprises a substrate having at least one step edge in the surface thereof and a layer made of a high-temperature superconducting material disposed thereon, wherein this layer, at the step edge, has a grain boundary that forms the one or two weak links of the Josephson junction. On both sides of the step edge, the a and/or b crystal axes in the plane of the high-temperature superconducting layer are oriented perpendicularly to the grain boundary to within a deviation of no more than 10, as a result of a texturing of the substrate and/or at least one buffer layer disposed between the substrate and the high-temperature superconducting layer. This can be technologically implemented, for example, by growing on the HTS layer by way of graphoepitaxy. By orienting the same crystal axis in each case perpendicularly to the step edge on both sides of the step edge, a maximal supercurrent can flow across the grain boundary induced by the step edge, and consequently across the Josephson junction.
Jülich Research Center | Date: 2014-04-17
An agent for preventing and/or treating HIV and other viral infections. The agent in particular comprises at least one peptide, including an amino acid sequence, which is suitable for preventing fibrils associated with Alzheimers disease, and/or homologs, fractions and parts thereof, so as to treat and/or prevent HIV and/or other viral infections.
Jülich Research Center | Date: 2014-03-20
A high-frequency conductor having improved conductivity comprises at least one electrically conductive base material. The ratio of the outer and inner surfaces of the base material permeable by a current to the total volume of the base material is increased by a) dividing the base material perpendicularly to the direction of current into at least two segments, which are spaced from each other by an electrically conductive intermediate piece and connected both electrically and mechanically to each other, and/or b) topographical structures in or on the surface of the base material and/or e) inner porosity of at least a portion of the base material compared to a design of the base material in which the respective feature was omitted. It was found that, as a result of these measures concerning the design, it is possible to physically arrange the same amount abase material so that a larger fraction of the base material is located at a distance of no more than skin depth from an outer or inner surface and is thus involved in current transport. As a result, a lesser fraction remains unused as a function of the skin effect.
RWTH Aachen and Jülich Research Center | Date: 2013-07-16
Disclosed is a memory element, a stack, and to a memory matrix in which the memory element can be used. Also disclosed is a method for operating the memory matrix, and to a method for determining the true value of a logic operation in an array comprising memory elements. The memory element has at least a first stable state 0 and a second stable state 1. By applying a first write voltage V