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Sunnyvale, CA, United States

Kulshreshtha P.K.,Lawrence Berkeley National Laboratory | Maruyama K.,JSR Micro INC | Kiani S.,Lawrence Berkeley National Laboratory | Blackwell J.,Intel Corporation | And 2 more authors.
Nanotechnology | Year: 2014

Here we present a new resist design concept. By adding dilute cross-linkers to a chemically amplified molecular resist, we synergize entropic and enthalpic contributions to dissolution by harnessing both changes to molecular weight and changes in intermolecular bonding to create a system that outperforms resists that emphasize one contribution over the other. We study patterning performance, resist modulus, solubility kinetics and material redistribution as a function of cross-linker concentration. Cross-linking varies from dilute oligomerization to creating a highly networked system. The addition of small amounts of cross-linker improves resist performance by reducing material diffusion and redistribution during development and stiffening the features to avoid pattern collapse. The new dilute cross-linking system achieves the highest resolution of a sensitive molecular glass resist at 20 nm half-pitch and line-edge roughness (LER) of 4.3 nm and can inform new resist design towards patterned feature control at the molecular level. © 2014 IOP Publishing Ltd. Source


Ogata Y.,JSR Micro INC | Mogi T.,JSR Corporation | Makita Y.,JSR Corporation
Journal of Polymer Science, Part B: Polymer Physics | Year: 2010

Solution property of hydrogenated polystyreneb-poly(ethylene/butylene)-b- polystyrene triblock copolymer (SEBS copolymer) was studied by using static light scattering and dynamic light scattering for cyclohexane and N-methylpyrrolidone (NMP) solutions. From the values of dimensionless parameters ρ, defined as the ratio of radius of gyration (S21/2 to hydrodynamic radius RH, and solubility parameters, SEBS copolymer proved to exist as single chain close to random coil in nonpolar cyclohexane, whereas aggregate into the core-shell micelle consisting of poly(ethylene/ butylene) (PEB) core surrounded by PS shell in polar NMP. The core-shell micelle formed in NMP is composed of 65 polymer chains, having three times larger average chain density (d = 0.12 g cm-3) than a single polymer chain (d = 0.04 g cm-3) in cyclohexane. The comparison with the aggregation behaviors in other solvents demonstrated that the aggregate compactness of the copolymer depended largely on solvent polarity, resulting in formation of the highly dense PEB core (Rc = 4.5 nm) and the thick PS shell (ΔR = 22.9 nm) in high-polar NMP. © 2010 Wiley Periodicals, Inc. Source


Fan W.,Massachusetts Institute of Technology | Boning D.,Massachusetts Institute of Technology | Charns L.,JSR Micro INC | Miyauchi H.,JSR Corporation | And 2 more authors.
Journal of the Electrochemical Society | Year: 2010

Chemical mechanical planarization (CMP) pad stiffness and conditioning effects were evaluated based on a physical die-level CMP model, with pad effective modulus and asperity height as parameters. In one study, patterned dielectric wafers were polished using polymeric pads of different stiffnesses. In a second study, wafers were polished by standard pads using different conditioning disks. Polishing experimental data (dielectric thickness and step height) were fitted by the physical model, enabling the extraction of the pad effective modulus and asperity height model parameters. A higher pad stiffness gives better within-die uniformity, and the conditioning disk with blocky diamonds achieves up-area only polishing for longer times. Polishing simulations using the physical model reflect a clear pattern density dependence. © 2010 The Electrochemical Society. Source


Cho K.,SEMATECH | Nakagawa H.,JSR Micro INC | Maruyama K.,JSR Micro INC | Shimizu M.,JSR Corporation | And 2 more authors.
Proceedings of SPIE - The International Society for Optical Engineering | Year: 2012

Patterning contact hole (CH) features with good critical dimension uniformity (CDU) is one of the most critical challenges for 10nm node lithography and beyond. Extreme ultraviolet lithography (EUVL) is considered a potential candidate because of its better aerial imaging and larger k1 factor than ArF immersion. To apply EUV lithography to high volume manufacturing, EUV resists must overcome both the trade-off among resolution (R), local CD uniformity (LCDU), and sensitivity (S) at CH features and the RLS trade-off at line/space (LS) features. We evaluated various resist materials for CH patterning applications using the microexposure tools (METs) at SEMATECH in Albany, NY, and at Lawrence Berkeley National Laboratory. In this study, we report the correlation between the lithographic performance of EUV resist at CH features and physical properties of chemically amplified resists (CARs) such as their dissolution behavior, the activation energy level of the protective group, and the acidity/acid diffusion length of the photoacid generator (PAG). © 2012 SPIE. Source


Maruyama K.,JSR Micro INC | Nakagawa H.,JSR Micro INC | Sharma S.,JSR Micro INC | Hishiro Y.,JSR Micro INC | And 2 more authors.
Proceedings of SPIE - The International Society for Optical Engineering | Year: 2012

In order to resolve 16 nm half pitch and beyond upon EUV exposure, we have developed new materials for not only resists but also for under layer materials. As for resist, short acid diffusion length photo-acid generator (PAG) was developed for high resolution. As for under layer, new material with high contact angle (CA) improved line collapse margin towards printing of minimum feature size. It was found that CA of under layer was one of the important factors for resolution improvement. Furthermore, effect of development time was investigated to improve resolution. Short development time gained resolution improvement compared with long one. Finally, combination of these results was investigated. As a result, JSR EUV resist showed the potential of 15nm half pitch resolution. © 2012 SPIE. Source

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