JSR Micro INC

Sunnyvale, CA, United States

JSR Micro INC

Sunnyvale, CA, United States
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Shiratani M.,JSR Corporation | Naruoka T.,JSR Corporation | Maruyama K.,JSR Micro INC | Ayothi R.,JSR Micro INC | And 5 more authors.
Proceedings of SPIE - The International Society for Optical Engineering | Year: 2014

Extreme ultraviolet (EUV) lithography is a candidate for the manufacturing of semiconductor devices at the 22 nm half pitch node and below. EUV lithography requires high performance resist with limited outgassing property. The key challenge for EUV resist is the simultaneous requirement of ultrahigh resolution (R), low line edge roughness (L) and high sensitivity (S) for lines and spaces (LS) features. To achieve high resist sensitivity EUV resist absorbance should be increased. Resin containing fluorine atom is one of the most attractive methods to improve absorbance level of EUV resist because the fluorine atom absorbs EUV light strongly. However, resist hydrophobicity (or high contact angle) also increase due to presence of fluorine atoms in the resist polymer. It is difficult to rinse high CA resist during development process so the resist containing polymer with fluorine atom may produce additional defects. In this paper, we will report the relationship between line edge roughness and acid diffusion length. We will also show the method to diminish defects caused by high contact angle (CA) resist. We achieved good resolution and LER improvement by controlling acid diffusion length. Moreover, we found the relationship of the number of defects and the structure of the monomers containing fluorine units. © 2014 SPIE.


Ogata Y.,JSR Micro Inc. | Mogi T.,JSR Corporation | Makita Y.,JSR Corporation
Journal of Polymer Science, Part B: Polymer Physics | Year: 2010

Solution property of hydrogenated polystyreneb-poly(ethylene/butylene)-b- polystyrene triblock copolymer (SEBS copolymer) was studied by using static light scattering and dynamic light scattering for cyclohexane and N-methylpyrrolidone (NMP) solutions. From the values of dimensionless parameters ρ, defined as the ratio of radius of gyration (S21/2 to hydrodynamic radius RH, and solubility parameters, SEBS copolymer proved to exist as single chain close to random coil in nonpolar cyclohexane, whereas aggregate into the core-shell micelle consisting of poly(ethylene/ butylene) (PEB) core surrounded by PS shell in polar NMP. The core-shell micelle formed in NMP is composed of 65 polymer chains, having three times larger average chain density (d = 0.12 g cm-3) than a single polymer chain (d = 0.04 g cm-3) in cyclohexane. The comparison with the aggregation behaviors in other solvents demonstrated that the aggregate compactness of the copolymer depended largely on solvent polarity, resulting in formation of the highly dense PEB core (Rc = 4.5 nm) and the thick PS shell (ΔR = 22.9 nm) in high-polar NMP. © 2010 Wiley Periodicals, Inc.


Nishino K.,JSR Corporation | Maruyama K.,JSR Corporation | Kimura T.,JSR Corporation | Kai T.,JSR Corporation | And 2 more authors.
Proceedings of SPIE - The International Society for Optical Engineering | Year: 2011

Extreme ultraviolet (EUV) lithography is one of the most promising candidates for next generation lithography (NGL) that can print 22nmhp and beyond. In order to implement EUV technology, resist is one of the critical items that require significant improvement in overall performance. In order to achieve these improvements, many research groups are developing new materials such as molecular glass (MG) polymer bound photo-acid generator (PAG) high quantum yield PAG, sensitizer and high absorption resin. In this study, we focused on innovative PAG materials and correlated PAG acid diffusion length to lithography performance. As a result, new resist designs with improved resolution, LWR, sensitivity are reported. © 2011 Copyright Society of Photo-Optical Instrumentation Engineers (SPIE).


Nakagawa H.,JSR Micro Inc. | Fujisawa T.,JSR Corporation | Goto K.,JSR Micro Inc. | Kimura T.,JSR Corporation | And 2 more authors.
Proceedings of SPIE - The International Society for Optical Engineering | Year: 2011

Extreme ultraviolet (EUV) lithography is one of the most promising technologies for achieving 22nm HP lithography and beyond. EUV resist is required to improve resolution limit down to less than 20nm hp. To achieve such a performance, innovative materials' development is necessary under ultra-thin resist film condition for preventing line collapse. In addition, more refined etching processes compatible with ultra-thin resist film are needed. In this study, we will report our several approaches for both materials and processes towards forming less than 20nm HP pattern under ultra-thin film condition. We will also introduce our tri-layer system formed with combination of Si-ARC stack and organic hard mask (OHM) stack for refined etching process. © 2011 SPIE.


Inukai K.,JSR Corporation | Maruyama K.,JSR Micro INC | Kawakami T.,JSR Corporation | Ramkrichnan A.,JSR Micro INC | And 2 more authors.
Journal of Photopolymer Science and Technology | Year: 2013

New resist, under layer, and topcoat materials specific to EUVL was developed and investigated for sub 20 nm hp patterning performance. High Tg resin and high absorption resin were developed and incorporated in to EUV resist. EUV resist including high Tg resin showed good LWR and local CD uniformity (LCDU). EUV resist containing high absorption resin showed higher resist sensitivity. New silicon type under-layer materials with different hydrophobicity were developed for further patterning performance improvement. Silicon type under-layer material with higher hydrophobic surface property improved line collapse margin which in turn improved resist resolution. EUV top-coat material was developed and examined for EUV resist sensitivity to out of band (OOB) radiation. EUV top-coat suppressed OOB influence and improved lithographic performance. EUV resist containing new materials resolved 15 nm half pitch lines and spaces and 20 nm contact hole patterns. © 2013SPST.


Kulshreshtha P.K.,Lawrence Berkeley National Laboratory | Maruyama K.,JSR Micro INC | Kiani S.,Lawrence Berkeley National Laboratory | Blackwell J.,Intel Corporation | And 2 more authors.
Nanotechnology | Year: 2014

Here we present a new resist design concept. By adding dilute cross-linkers to a chemically amplified molecular resist, we synergize entropic and enthalpic contributions to dissolution by harnessing both changes to molecular weight and changes in intermolecular bonding to create a system that outperforms resists that emphasize one contribution over the other. We study patterning performance, resist modulus, solubility kinetics and material redistribution as a function of cross-linker concentration. Cross-linking varies from dilute oligomerization to creating a highly networked system. The addition of small amounts of cross-linker improves resist performance by reducing material diffusion and redistribution during development and stiffening the features to avoid pattern collapse. The new dilute cross-linking system achieves the highest resolution of a sensitive molecular glass resist at 20 nm half-pitch and line-edge roughness (LER) of 4.3 nm and can inform new resist design towards patterned feature control at the molecular level. © 2014 IOP Publishing Ltd.


Maruyama K.,JSR Micro INC | Ayothi R.,JSR Micro INC | Hishiro Y.,JSR Micro INC | Inukai K.,JSR Corporation | And 2 more authors.
Proceedings of SPIE - The International Society for Optical Engineering | Year: 2013

New resist, under layer, and topcoat materials specific to EUVL was developed and investigated for sub 20 nm hp patterning performance. High Tg resin and high absorption resin were developed and incorporated in to EUV resist. EUV resist including high Tg resin showed good LWR and local CD uniformity (LCDU). EUV resist containing high absorption resin showed higher resist sensitivity. New silicon type under-layer materials with different hydrophobicity were developed for further patterning performance improvement. Silicon type under-layer material with higher hydrophobic surface property improved line collapse margin which in turn improved resist resolution. EUV top-coat material was developed and examined for EUV resist sensitivity to out of band (OOB) radiation. EUV top-coat suppressed OOB influence and improved lithographic performance. EUV resist containing new materials resolved 15 nm half pitch lines and spaces and 20 nm contact hole patterns © 2013 SPIE.


Inukai K.,JSR Corporation | Sharma S.,JSR Micro INC. | Nakagawa H.,JSR Micro INC. | Shimizu M.,JSR Corporation | Kimura T.,JSR Corporation
Proceedings of SPIE - The International Society for Optical Engineering | Year: 2012

Extreme ultraviolet (EUV) lithography high volume manufacturing tools are expected to use laser produced plasma sources to generate EUV radiation necessary for resist exposure. EUV light from laser sources emit light over a wide spectral range or popularly known as out-of-band (OOB) radiation along with the desired wavelength. EUV resists are sensitive to both EUV and OOB radiation because a fair amount of the EUV photoresists are based on materials designed for 193 nm and 248 nm. Some of the detrimental effects of OOB radiation within the lithography process can be seen in the form of photoresist film thickness loss, which in turn results in profile degradation. Therefore development of EUV resists which are insensitive to OOB radiation is very important. We investigated EUV resist patterning performance and the effect of OOB radiation specifically in the DUV (193 nm and 248 nm) wavelength range. Resist materials with various DUV absorbance were prepared, and less OOB sensitive materials were found. Moreover, in this study effective top-coat type material for OOB reduction was developed and its effectiveness was confirmed by EUV exposure results. © 2012 SPIE.


Cho K.,SEMATECH | Nakagawa H.,JSR Micro Inc. | Maruyama K.,JSR Micro Inc. | Shimizu M.,JSR Corporation | And 2 more authors.
Proceedings of SPIE - The International Society for Optical Engineering | Year: 2012

Patterning contact hole (CH) features with good critical dimension uniformity (CDU) is one of the most critical challenges for 10nm node lithography and beyond. Extreme ultraviolet lithography (EUVL) is considered a potential candidate because of its better aerial imaging and larger k1 factor than ArF immersion. To apply EUV lithography to high volume manufacturing, EUV resists must overcome both the trade-off among resolution (R), local CD uniformity (LCDU), and sensitivity (S) at CH features and the RLS trade-off at line/space (LS) features. We evaluated various resist materials for CH patterning applications using the microexposure tools (METs) at SEMATECH in Albany, NY, and at Lawrence Berkeley National Laboratory. In this study, we report the correlation between the lithographic performance of EUV resist at CH features and physical properties of chemically amplified resists (CARs) such as their dissolution behavior, the activation energy level of the protective group, and the acidity/acid diffusion length of the photoacid generator (PAG). © 2012 SPIE.


Maruyama K.,JSR Micro Inc. | Nakagawa H.,JSR Micro Inc. | Sharma S.,JSR Micro Inc. | Hishiro Y.,JSR Micro Inc. | And 2 more authors.
Proceedings of SPIE - The International Society for Optical Engineering | Year: 2012

In order to resolve 16 nm half pitch and beyond upon EUV exposure, we have developed new materials for not only resists but also for under layer materials. As for resist, short acid diffusion length photo-acid generator (PAG) was developed for high resolution. As for under layer, new material with high contact angle (CA) improved line collapse margin towards printing of minimum feature size. It was found that CA of under layer was one of the important factors for resolution improvement. Furthermore, effect of development time was investigated to improve resolution. Short development time gained resolution improvement compared with long one. Finally, combination of these results was investigated. As a result, JSR EUV resist showed the potential of 15nm half pitch resolution. © 2012 SPIE.

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