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Alībāg, India

Hankare P.P.,Shivaji University | Manikshete A.H.,Walchand College | Chate P.A.,JSM College
Journal of Materials Science: Materials in Electronics | Year: 2010

Mo 0.5W 0.5Se 2 thin films were obtained by using relative simple chemical route at room temperature. Various preparative conditions of the thin films are outlined. The films were characterized by X-ray diffraction, scanning electron microscope, optical and electrical properties. The grown films were found to be uniform, well adherent to substrate and brown in color. The X-ray diffraction pattern shows that thin films have a hexagonal phase. Optical properties show a direct band gap nature with band gap energy 1.44 eV and having specific electrical conductivity in the order of 10 -5 (Ωcm) -1. © Springer Science+Business Media, LLC 2009.

Chate P.A.,JSM College | Hankare P.P.,Shivaji University
Journal of Alloys and Compounds | Year: 2011

Zn-Se-S composite thin films of mixed cubic and hexagonal phases of ZnSe and ZnS are synthesized by dip process at room temperature. Polycrystalline nature of the films was observed from XRD. Optical band gap of Zn-Se-S thin film was found to be in between individual band gaps of ZnSe and ZnS. The electrical conductivity was found to be in the range of 10-5-10-2 (Ω cm)-1. Due to above properties, these films find applications as a buffer layer in solar cells. © 2011 Elsevier B.V.

Abstract Molybdenum diselenide thin films have been deposited on to stainless steel and glass substrates by the chemical process, using ammonium molybdate, sodium selenosulphite as a precursor sources and citric acid was used as a complexing agent. The structural and optical properties of the deposited films have been studied using X-ray diffraction and optical absorption techniques, respectively. XRD studies reveal that the films are polycrystalline with hexagonal crystal structure. Optical absorption study shows the presence of direct transition with band gap energy 1.51 eV. EDAX analysis shows that the films are nearly stoichiometry of Mo: Se: 1:2. The configuration of fabricated cell is n-MoSe2 | NaI (2 M) + I2 (1 M) | C (graphite) yielded a conversion efficiency of 1.08%. © 2015 Published by Elsevier Masson SAS.

Chate P.A.,JSM College | Sathe D.J.,KITs Engineering College | Hankare P.P.,Shivaji University
Journal of Materials Science: Materials in Electronics | Year: 2014

We have successfully deposited cadmium indium sulphide (CdIn 2S4) thin films by simple dip method using malonic acid as complexing agent. Variation of thickness with time and temperature were studied. Deposited samples were characterized by X-ray diffraction (XRD). The absorption, electrical and photoelectrochemical properties are also studied. The XRD analysis shows that the film samples are in cubic structure. The optical band gap energy was found to be 2.25 eV. Activation energy was found to be 0.511 and 0.018 eV for higher temperature and lower temperature respectively. For CdIn2S4 photoelectrode, the open circuit voltage and short circuit current are found to be 125 mV and 86 mA respectively. The calculation shows the fill factor is 33.38 %. The power conversion efficiency is found to be 1.22 %. © 2014 Springer Science+Business Media New York.

Hankare P.P.,Shivaji University | Chate P.A.,JSM College | Jadhav B.V.,Shivaji University
Journal of Alloys and Compounds | Year: 2010

Dip method was used to obtain cadmium selenide (CdSe) thin films on glass substrates. The film thickness was found to be 0.8 μm with a growing time of 5 h. The material obtained was characterized by optical absorption, scanning electron microscopy, X-ray diffraction and electrical measurements. Room temperature deposition results in films with the cubic structure and crystallite size of about 19.7 nm. From the optical absorption data, an energy gap equal to 1.82 eV was found. The material is interesting for applications in hybrid systems for solar energy conversions. © 2010 Elsevier B.V. All rights reserved.

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