Alībāg, India
Alībāg, India

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Hankare P.P.,Shivaji University | Manikshete A.H.,Walchand College | Chate P.A.,Jsm College
Journal of Materials Science: Materials in Electronics | Year: 2010

Mo 0.5W 0.5Se 2 thin films were obtained by using relative simple chemical route at room temperature. Various preparative conditions of the thin films are outlined. The films were characterized by X-ray diffraction, scanning electron microscope, optical and electrical properties. The grown films were found to be uniform, well adherent to substrate and brown in color. The X-ray diffraction pattern shows that thin films have a hexagonal phase. Optical properties show a direct band gap nature with band gap energy 1.44 eV and having specific electrical conductivity in the order of 10 -5 (Ωcm) -1. © Springer Science+Business Media, LLC 2009.


Chate P.A.,Jsm College | Hankare P.P.,Shivaji University
Journal of Alloys and Compounds | Year: 2011

Zn-Se-S composite thin films of mixed cubic and hexagonal phases of ZnSe and ZnS are synthesized by dip process at room temperature. Polycrystalline nature of the films was observed from XRD. Optical band gap of Zn-Se-S thin film was found to be in between individual band gaps of ZnSe and ZnS. The electrical conductivity was found to be in the range of 10-5-10-2 (Ω cm)-1. Due to above properties, these films find applications as a buffer layer in solar cells. © 2011 Elsevier B.V.


Abstract Molybdenum diselenide thin films have been deposited on to stainless steel and glass substrates by the chemical process, using ammonium molybdate, sodium selenosulphite as a precursor sources and citric acid was used as a complexing agent. The structural and optical properties of the deposited films have been studied using X-ray diffraction and optical absorption techniques, respectively. XRD studies reveal that the films are polycrystalline with hexagonal crystal structure. Optical absorption study shows the presence of direct transition with band gap energy 1.51 eV. EDAX analysis shows that the films are nearly stoichiometry of Mo: Se: 1:2. The configuration of fabricated cell is n-MoSe2 | NaI (2 M) + I2 (1 M) | C (graphite) yielded a conversion efficiency of 1.08%. © 2015 Published by Elsevier Masson SAS.


Chate P.A.,Jsm College
Applied Physics A: Materials Science and Processing | Year: 2016

A dip method is employed for the deposition of NiS2 thin film at room temperature. Nickel sulphate, succinic acid and thiourea were used as the source materials. The X-ray diffraction analysis shows that the film samples are cubic phase. The specific electrical conductivity of the film was found to be 3.16 × 10−6 (Ω cm)−1. The films show high absorption, and band gap energy value was found to be 1.37 eV. The temperature dependence of an electrical conductivity, thermoelectrical power, carrier density and carrier mobility for NiS2 thin films has been examined. © 2016, Springer-Verlag Berlin Heidelberg.


Chate P.A.,Jsm College | Hankare P.P.,Shivaji University
Journal of Alloys and Compounds | Year: 2010

Crystalline cadmium selenide thin films have been deposited using dip technique. The precursor solution contains cadmium sulphate, sodium selenosulphate with maleic acid as a complexing agent. The deposited films undergo various characterization techniques. The crystalline phase of the deposited sample was hexagonal wurtzite-type. Compositional study indicates ratio of Cd:Se was close to 1:1. The direct optical band gap energy was found to be 1.90 eV. The construction of fabricated cell is CdSeNaOH (1 M) + S (1 M) + Na2S (1 M)C(graphite). The photoelectrochemical characterization of the films is carried out by studying current-voltage characterization, capacitance-voltage and power output characteristics. The fill factor and efficiency of the cell were found to be 33.44% and 1.01%, respectively. © 2010 Elsevier B.V. All rights reserved.


Hankare P.P.,Shivaji University | Chate P.A.,Jsm College | Jadhav B.V.,Shivaji University
Journal of Alloys and Compounds | Year: 2010

Dip method was used to obtain cadmium selenide (CdSe) thin films on glass substrates. The film thickness was found to be 0.8 μm with a growing time of 5 h. The material obtained was characterized by optical absorption, scanning electron microscopy, X-ray diffraction and electrical measurements. Room temperature deposition results in films with the cubic structure and crystallite size of about 19.7 nm. From the optical absorption data, an energy gap equal to 1.82 eV was found. The material is interesting for applications in hybrid systems for solar energy conversions. © 2010 Elsevier B.V. All rights reserved.


Chate P.A.,Jsm College | Patil S.S.,Jsm College | Patil J.S.,Jsm College | Sathe D.J.,KITs Engineering College | Hankare P.P.,Shivaji University
Electronic Materials Letters | Year: 2012

Nanocrystalline cadmium selenide thin films have been deposited on non-conducting glass substrates using oxalic acid. The film thickness was found to be 0. 73 μm with a growing time of 6 h. The structural, morphological, optical, electrical properties of samples were studies. Photoelectrochemical performance was also studied. Room temperature deposition results in films with the cubic structure and crystallite size of about 19. 33 nm. The optical band gap energy of the film sample was found to be 1. 91 eV. The efficiency of photoelectrode was found to be 1. 1% using sulphide-polysulphide electrolyte. © 2012 The Korean Institute of Metals and Materials and Springer Science+Business Media Dordrecht.


Chate P.A.,Jsm College | Patil S.S.,Jsm College | Patil J.S.,Jsm College | Sathe D.J.,KIT Enginering College | Hankare P.P.,Shivaji University
Physica B: Condensed Matter | Year: 2013

Cadmium sulphide thin films were deposited by the chemical method using oxalic acid as chelating agent. Solution temperature and deposition time were optimised for depositing good quality of films. The structural, optical, electrical and photoelectrochemical properties of samples were studied. From the optical absorption data, an energy gap equal to 2.60 eV was found. The efficiency of photo-electrode was found to be 1.0% using sulphide-polysulphide electrolyte. © 2012 Elsevier B.V.


Chate P.A.,Jsm College | Sathe D.J.,KITs Engineering College | Hankare P.P.,Shivaji University
Journal of Materials Science: Materials in Electronics | Year: 2014

We have successfully deposited cadmium indium sulphide (CdIn 2S4) thin films by simple dip method using malonic acid as complexing agent. Variation of thickness with time and temperature were studied. Deposited samples were characterized by X-ray diffraction (XRD). The absorption, electrical and photoelectrochemical properties are also studied. The XRD analysis shows that the film samples are in cubic structure. The optical band gap energy was found to be 2.25 eV. Activation energy was found to be 0.511 and 0.018 eV for higher temperature and lower temperature respectively. For CdIn2S4 photoelectrode, the open circuit voltage and short circuit current are found to be 125 mV and 86 mA respectively. The calculation shows the fill factor is 33.38 %. The power conversion efficiency is found to be 1.22 %. © 2014 Springer Science+Business Media New York.


Chate P.A.,Jsm College | Hankare P.P.,Shivaji University | Sathe D.J.,KITs Engineering College
Journal of Alloys and Compounds | Year: 2010

Cd0.9Zn0.1Se:In thin films with a variable composition (0-1.0 mol% indium) have been grown on a non-conducting glass substrate by chemical bath deposition method. The effect of doping has been investigated. The color of a film was found to be darkening with increase in the concentration of indium. X-ray diffraction, optical absorption, electrical and thermoelectrical techniques were used to characterize the films. The X-ray diffraction study indicates the crystalline nature in single cubic phase over whole range of composition. Analysis of absorption spectra gave direct type of band gap, the magnitude of which varies non-linearly as the indium content in the film increases. The dc electrical conductivity increases up to 0.1 mol%. The promising features observed are the enchantment in crystallinity, grain size, electrical conductivity and decrease in band gap, up to 0.1 mol%. © 2010 Elsevier B.V. All rights reserved.

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