Zakheim D.A.,RAS Ioffe Physical - Technical Institute |
Itkinson G.V.,NTL Innovation LLC |
Kukushkin M.V.,NTL Innovation LLC |
Markov L.K.,RAS Ioffe Physical - Technical Institute |
And 4 more authors.
Physica Status Solidi (C) Current Topics in Solid State Physics | Year: 2015
In this paper, we report on the development and fabrication of high power LED chips based on AlGaInN. These chips are meant for flip-chip mounting and have novel contact pad topology utilizing two-level metallization with the intermediate dielectric isolation. The size and shape of highly reflective ITO/Ag-based p-type and Ti/Ag based n-type contact pads were adjusted with the use of the numerical simulations of current spreading. As a result, the developed chip has 1 mm2 active area and series resistance as low as 0.3 Ω. The fabricated LEDs demonstrate emission power of 542 mW at 350 mA and the maximum external quantum efficiency equal to 60%. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.