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Moscow, Russia

Kartashov D.A.,JSC Mikron | Gerasimenko N.N.,Moscow Institute of Electronic Technology | Medetov N.A.,Moscow Institute of Electronic Technology | Turyansky A.G.,RAS Lebedev Physical Institute | Tsekhosh V.I.,RAS Lebedev Physical Institute
Russian Microelectronics | Year: 2011

The effect of the width of the search range of solutions on genetic algorithm performance in the interpretation of X-ray reflectograms has been analyzed. The search algorithm has been optimized, based on the results. © Pleiades Publishing, Ltd., 2011. Source


Matyushkin I.V.,JSC Mikron
World Academy of Science, Engineering and Technology | Year: 2011

The new architecture for quantum cellular automata is offered. A QCA cell includes two layers nc-Si, divided by a dielectric. Among themselves cells are connected by the bridge from a conductive material. The comparison is made between this and QCA, offered earlier by C. Lent's group. Source


Kravtsov A.,JSC Mikron
Proceedings of SPIE - The International Society for Optical Engineering | Year: 2010

In this article we will summarize most of important parameters for cache memory optimization which can be used in embedded systems. The main point for optimization is that data in cache will be read continuously. It is leave a mark on optimization parameters like work algorithm for cache level 1 and level 2, pipeline in cache, tiny cache, cache size, set-associativity and so on. © 2010 Copyright SPIE - The International Society for Optical Engineering. Source


Krasnikov G.Ya.,JSC Mikron | Zaitsev N.A.,JSC Mikron | Matyushkin I.V.,JSC Mikron
Russian Microelectronics | Year: 2011

The refinement of the evaluation formula for an equivalent oxide thickness in the case of a multi-layer gate insulator is obtained, taking into account a polarity effect in the suboxide layer at the Si/high-K dielectric interface. Calculated semiclassically and associated with the polarization dipole mechanism, the correction is negative and does not exceed 6%. © 2011 Pleiades Publishing, Ltd. Source


Nuykin A.,JSC Mikron | Kravtsov A.,JSC Mikron | Timoshin S.,JSC Mikron | Zubov I.,JSC Mikron
2012 4th International Conference on Communications and Electronics, ICCE 2012 | Year: 2012

This paper presents an EEPROM ultra low cost design for RFID applications. Two different read principles of the non-volatile memory are observed: the dynamic reading and the low current static reading. We designed Dickson and latched charge-pump circuits with active and reverse-biased diode regulation. An EEPROM dissipate 1.5μW/15μW for dynamic/static 32-bit reading operations and 50μW for writing operations with the latched charge-pump circuit. A 640-bit EEPROM is fabricated in 2-poly 4-metal 0.18 μm CMOS process. The EEPROM core area is only 0.03 mm2, the area of EEPROM high-voltage programming controller is 0.01 mm2/0.025mm2 for latched/Dickson architectures. © 2012 IEEE. Source

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