Jordan Valley Semiconductors Inc.

Austin, TX, United States

Jordan Valley Semiconductors Inc.

Austin, TX, United States

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Fronheiser J.,Globalfoundries | Kamineni V.,Globalfoundries | Wormington M.,Jordan Valley Semiconductors Inc. | Matney K.,Jordan Valley Semiconductors Inc. | Karapetrova E.,Argonne National Laboratory
Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics | Year: 2014

Characterization of the periodicity and strain state of an array of lithographically patterned silicon and silicon-germanium alloy on silicon fins using reciprocal space mapping of Bragg diffraction peaks is presented. Various patterned structures with different pitch values of 90nm, 65nm, and 42nm have been studied and data for the 42nm pitch sample is discussed in this paper. Diffraction from fin arrays is treated kinematically analogous to periodic surface grating structures. Diffraction from the symmetric 004 planes is used to calculate pitch and analyze the pitch walking pattern which appears as harmonic peaks on either side of the fin peaks. Pitch walking refers to the presence of two periodicities in the array due to the lithographic process. Longitudinal scans are evaluated at the fin peak positions to probe into the shape of the fin structure. Nonrectangular fin shapes resulted in peak splitting of the longitudinal scans of higher order fin peaks indicating a finite sidewall slope. Asymmetric 224 planes were analyzed to study the quality and strain-relaxation of the fin structures both parallel and perpendicular to the fin length using reciprocal space mapping techniques. © 2014 American Vacuum Society.


Wittge J.,Albert Ludwigs University of Freiburg | Danilewsky A.N.,Albert Ludwigs University of Freiburg | Allen D.,Dublin City University | McNally P.,Dublin City University | And 9 more authors.
Journal of Applied Crystallography | Year: 2010

The nucleation of dislocations at controlled indents in silicon during rapid thermal annealing has been studied by in situ X-ray diffraction imaging (topography). Concentric loops extending over pairs of inclined {111} planes were formed, the velocities of the inclined and parallel segments being almost equal. Following loss of the screw segment from the wafer, the velocity of the inclined segments almost doubled, owing to removal of the line tension of the screw segments. The loops acted as obstacles to slip band propagation. © 2010 International Union of Crystallography Printed in Singapore-all rights reserved.


Diebold A.C.,University at Albany | Medikonda M.,University at Albany | Muthinti G.R.,University at Albany | Kamineni V.K.,Globalfoundries | And 4 more authors.
Proceedings of SPIE - The International Society for Optical Engineering | Year: 2013

Although fin metrology presents many challenges, the single crystal nature of the fins also provides opportunities to use a combination of measurement methods to determine stress and pitch. While the diffraction of light during a scatterometry measurement is well known, X-ray diffraction from a field (array) of single crystal silicon fins can also provide important information. Since some fins have Si1-xGex alloys at the top of the fin, determination of the presence of stress relaxation is another critical aspect of fin characterization. Theoretical studies predict that the biaxially stressed crystal structure of pseudomorphic alloy films will be altered by the fin structure. For example, one expects it will be different along the length of the fin vs the width. Reciprocal space map (RSM) characterization can provide a window in the stress state of fins as well as measure pitch walking and other structural information. In this paper, we describe the fundamentals of how RSMs can be used to characterize the pitch of an array of fins as well as the stress state. We describe how this impacts the optical properties used in scatterometry measurement. © 2013 SPIE.


Ryan P.,Jordan Valley Semiconductors Inc. | Wormington M.,Jordan Valley Semiconductors IL Ltd. | Tokar A.,Jordan Valley Semiconductors Inc.
Solid State Technology | Year: 2011

Two complementary techniques that provide in-line metrology solutions for epitaxial layers, such as SiGe or Si:C on Si wafers are presented. These techniques are high-resolution X-ray diffraction (HRXRD) and X-ray reflectometry (XRR). The capabilities and principles of both techniques will be summarized and representative data will be used to demonstrate both the principles and utility of combined HRXRD and XRR for the metrology of strained epitaxial layers. Both techniques are non-destructive and provide calibration-free, first principles measurement capabilities.


Hung P.Y.,SEMATECH | Wormington M.,Jordan Valley Semiconductors Inc. | Matney K.,Jordan Valley Semiconductors Inc. | Ryan P.,Jordan Valley Semiconductors Inc. | And 7 more authors.
ECS Transactions | Year: 2012

High electron mobility III-V materials are strong candidates for nMOS transistors at the 11 nm technology node and beyond. Integrating III-V materials with Si (III-V/Si) is an attractive approach because it leverages the current Si-based manufacturing platform. However, the large lattice mismatch between III-V and Si leads to defects in the channel and compromises device performance and reliability. This paper explores two inline X-ray based characterization techniques, high resolution X-ray diffraction (HRXRD) and X-ray diffraction imaging (XRDI), to characterize defects in novel III-V/Si structures. The benefits and limitations of these techniques will be discussed. © The Electrochemical Society.


Wormington M.,Jordan Valley Semiconductors Inc. | Yokhin B.,Jordan Valley Semiconductors Ltd. | Berman D.,Jordan Valley Semiconductors Ltd. | Krokhmal A.,Jordan Valley Semiconductors Ltd. | And 4 more authors.
AIP Conference Proceedings | Year: 2011

High-resolution X-ray diffraction (HRXRD) is an established technique for the characterization and metrology of epitaxial thin-films. However, its use by the silicon semiconductor industry has been limited due to the stringent reliability, spot-size and throughput requirements for in-line measurement of product wafers. We have developed a new X-ray metrology tool (called the JVX 7200) that meets these demands. The tool features a novel HRXRD channel that provides composition, relaxation and thickness information for SiGe and Si:C epitaxial films. It also combines an enhanced X-ray reflectivity (XRR) channel to provide complementary thickness, density and roughness information on SiGe as well as other front-end of line (FEOL) films, such as those found in high-k gate/metal gate (HKMG) stacks. We describe the principles and capabilities of both the HRXRD and XRR channels and provide a comparison with conventional X-ray systems. Representative data are presented to highlight the capabilities of the new tool. © 2011 American Institute of Physics.


Xcd

Trademark
Jordan Valley Semiconductors Inc. | Date: 2011-09-27

Computer software for processing data of laboratory and semiconductor process control instruments.


Xol

Trademark
Jordan Valley Semiconductors Inc. | Date: 2011-09-27

Computer software for processing data of laboratory and semiconductor process control instruments.


Trademark
Jordan Valley Semiconductors Inc. | Date: 2012-05-22

Instruments for inspection, testing and metrology of semiconductor wafers and devices, namely, X-ray and ultraviolet apparatus for analyzing semiconductor wafers and microelectronics; analytical instruments, namely, instruments based on X-rays and ultraviolet radiation, namely, spectrometers, diffractometers, reflectometers and fluorometers.


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