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Austin, TX, United States

Wittge J.,Albert Ludwigs University of Freiburg | Danilewsky A.N.,Albert Ludwigs University of Freiburg | Allen D.,Dublin City University | McNally P.,Dublin City University | And 9 more authors.
Journal of Applied Crystallography | Year: 2010

The nucleation of dislocations at controlled indents in silicon during rapid thermal annealing has been studied by in situ X-ray diffraction imaging (topography). Concentric loops extending over pairs of inclined {111} planes were formed, the velocities of the inclined and parallel segments being almost equal. Following loss of the screw segment from the wafer, the velocity of the inclined segments almost doubled, owing to removal of the line tension of the screw segments. The loops acted as obstacles to slip band propagation. © 2010 International Union of Crystallography Printed in Singapore-all rights reserved.


Grant
Agency: Department of Commerce | Branch: National Institute of Standards and Technology | Program: SBIR | Phase: Phase I | Award Amount: 75.00K | Year: 2004

A semiconductor metrology tool will be developed employing the technique of small-angle x-ray scattering (SAXS) to measure the critical dimension (CD) of patterned device structures. The feasibility of the SAXS technique to measure CD has been shown using high-power synchrotron radiation facilities which are not of practical use to the semiconductor industry. The ultimate project goal is to produce a practical CD-SAXS tool for use within semiconductor fabs. COMMERCIAL APPLICATIONS: Currently, CD-SAXS measurements can be performed at synchrotron radiation facilities available at various National Laboratories around the country and government-sponsored facilities around the world. These facilities, while accessible to industry, cannot be considered practical outlets for routine semiconductor production CD-SAXS measurements. A goal of this project would be to produce a commercial CD-SAXS tool for use within semiconductor fabrication facilities. While there exist numerous analytical techniques which offer useful information for semiconductor production, only those which can be integrated into the production facility are able to meet the requirements of production throughput. The resulting commercial product would complement Jordan Valley's existing product line of x-ray metrology tools and would be offered to industry through the company's existing worldwide sales channels.


Trademark
Jordan Valley Semiconductors Inc. and Bede Scientific Instruments Ltd | Date: 2006-10-24

MEASURING AND ANALYTICAL APPARATUS AND INSTRUMENTS AND MATERIALS CHARACTERIZATION AND MATERIALS TESTING APPARATUS AND INSTRUMENTS, NAMELY, APPARATUS AND INSTRUMENTS FOR ANALYZING AND TESTING THIN FILMS, METALLIC THIN FILMS, MULTI LAYERS, CERAMICS, SUPER CONDUCTORS AND SEMI-CONDUCTORS; POWDER, SINGLE CRYSTAL AND HIGH RESOLUTION DIFFRACTION MEASURING TOOLS; X-RAY APPARATUS AND INSTRUMENTS, NAMELY, X-RAY TUBES, X-RAY CAMERAS, X-RAY DETECTORS, DIFFRACTOMETERS, REFLECTOMETERS, AND X-RAY TOPOGRAPHY APPARATUS AND INSTRUMENTS FOR USE IN THE FIELD OF MATERIALS CHARACTERIZATION AND MATERIALS TESTING; COMPUTER HARDWARE ADAPTED FOR USE WITH THE AFORESAID; COMPUTER OPERATING SYSTEM SOFTWARE ADAPTED FOR USE WITH THE AFORESAID.


Trademark
Jordan Valley Semiconductors Inc. | Date: 2013-06-11

Instruments for inspection, testing and metrology of semiconductor wafers and devices, namely, X-ray and ultraviolet apparatus for analyzing semiconductor wafers and microelectronics; analytical instruments, namely, instruments based on X-rays and ultraviolet radiation, namely, spectrometers, diffractometers, reflectometers and fluorometers.


Trademark
Jordan Valley Semiconductors Inc. and Jordan Valley Applied Radiation Ltd. | Date: 2007-04-17

X-ray metrology instruments for analysis and characterization of thin films, and accessories, namely, computer work stations in the nature of computer hardware, and software for controlling the operation and processing data of such instruments.

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