Wan J.,Zhejiang University |
Wan J.,CAS Institute of Microelectronics |
Wan J.,Jiaxing Kemin Electronic Equipment Technology Co. |
Rao Z.,Zhejiang University |
And 8 more authors.
Zhenkong Kexue yu Jishu Xuebao/Journal of Vacuum Science and Technology | Year: 2014
A novel type of plasma enhanced atomic layer deposition reactor was designed, constructed, and tested in the synthesis of N-doped TiO2 photo-catalyst. The reactor consists of a vacuum system, a remote pulsed inductively coupled plasma gener ator, precursor transport path, and the automatic control unit, capable of regulating the film growth conditions, such as the plasma generation, substrate temperature, gas flow rate, deposition cycle, and etc. The N-doped TiO2 films deposited in the test were characterized with X-ray diffraction, X-ray photoelectron spectroscopy, high resolution transmission electron microscopy, and ultraviolet visible spectroscopy. The results show that the 3 nm thick amorphous N-doped TiO2 were synthesized at a growth rate of 0.05 nm/cycle; and that some N substituted O in the TiO2 film. We found that the N-doping significantly increases the absorption efficiency in the visible light range.