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Ye D.,Jiangsu University of Science and Technology | Du C.,Jiangsu University of Science and Technology | Du C.,Jiangyin Changdian Advanced Packaging Co. | Wu M.,Jiangsu University of Science and Technology | Lai Z.,Jiangsu University of Science and Technology
Journal of Materials Science: Materials in Electronics

In this study, microstructure and mechanical properties of Sn–xBi solder alloy were investigated. In Sn–3.6Bi and Sn–7.25Bi solder alloys, the particle-shaped Bi phase distributed in Sn-rich phase matrix. In Sn–14.5Bi and Sn–29Bi solder alloys, the shape of Bi phase was irregular. In Sn–58Bi solder alloy, the island-shaped Sn-rich phase distributed in Bi phase uniformly. The hardness of Sn–xBi was improved from 11.36 to 27.04 MPa first and declined to 10.05 MPa then when the Bi fraction was increased form 0 to 100 wt%. The bend fracture energy of Sn–58Bi showed a dependence on the loading speed. Moreover, the bend fracture energy of Sn–29Bi solder alloy was lower than that of Sn–14.5Bi and Sn–58Bi, which was caused by the special microstructure of Sn–29Bi. © 2015, Springer Science+Business Media New York. Source

Jiangyin Changdian Advanced Packaging Co. | Date: 2011-10-21

A low-k chip packaging structure comprising chip body I (

Yang D.,Fudan University | Ye X.,Fudan University | Xiao F.,Fudan University | Chen D.,Jiangyin Changdian Advanced Packaging Co. | Zhang L.,Jiangyin Changdian Advanced Packaging Co.
ICEPT-HDP 2012 Proceedings - 2012 13th International Conference on Electronic Packaging Technology and High Density Packaging

Wafer level packaging (WLP) is regarded as one of the most potential single chip packages for its compatibility with wafer fabrication process. As the pitch size of the package becomes lower, the reliability of fine pitch WLP devices is greatly challenged. Finer pitch may result in weaker solder joints, which leads to reliability problems such as fatigue failure, creep deformation and so on. Much work has been done to investigate the reliability of wafer level package above 500 μm pitch under different conditions such as temperature cycling, thermal shock and drop test, etc. Nevertheless, there are few reports about the reliability of WLP with pitch size less than 500 μm. In this study, WLP with a size of 5×5 mm2 and a pitch of 400 μm were fabricated. Each chip has 144 lead-free SAC105 solder balls in an array of 12×12. The chips are reflowed on Ni/Au pads on boards. The chips were experienced a set of reliability tests including temperature cycling, thermal shock and drop test according to JEDEC standards. Furthermore, failure analysis is carried out to study the failure mechanism. Failures are found mostly inside of the solder ball after TC and TS tests, while the drop tests cause more damage to the solder-board and solder-chip interface. © 2012 IEEE. Source

Jiangyin Changdian Advanced Packaging Co. | Date: 2011-10-21

Provided is a method for packaging a low-k chip, comprising: attaching onto a carrier wafer a layer of temporary strippable film; arranging inversely a chip (

Zhang H.,CAS Shenyang Institute of Metal Research | Zhu Q.-S.,CAS Shenyang Institute of Metal Research | Liu Z.-Q.,CAS Shenyang Institute of Metal Research | Zhang L.,Jiangyin Changdian Advanced Packaging Co. | And 2 more authors.
Journal of Materials Science and Technology

Fe-Ni films with compositions of Fe-75Ni, Fe-50Ni, and Fe-30Ni were used as under bump metallization (UBM) to evaluate the interfacial reliability of SnAgCu/Fe-Ni solder joints through ball shear test, high temperature storage, and temperature cycling. The shear strengths for Fe-75Ni, Fe-50Ni, and Fe-30Ni solder joints after reflow were 42.57, 53.94 and 53.98 MPa, respectively, which were all satisfied the requirement of industrialization (>34.3 MPa). High temperature storage was conducted at 150, 175 and 200 °C. It was found that higher Fe content in Fe-Ni layer had the ability to inhibit the mutual diffusion at interface region below 150 °C, and the growth speed of intermetallic compound (IMC) decreased with increasing Fe concentration. When stored at 200 °C, the IMC thickness reached a limit for all three films after 4 days, and some cracks occurred at the interface between IMC and Fe-Ni layer. The activation energies for the growth of FeSn2 on Fe-30Ni, Fe-50Ni, and Fe-75Ni films were calculated as 246, 185, and 81 kJ/mol, respectively. Temperature cycling tests revealed that SnAgCu/Fe-50Ni solder joint had the lowest failure rate (less than 10%), and had the best interfacial reliability among three compositions. © 2014 . Source

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