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Miao D.,Jiangsu Xiuqiang Glasswork Co. | Zhao Q.,Wuhan University of Technology | Dong Y.,Jiangsu Xiuqiang Glasswork Co. | Yuan W.,Wuhan University of Technology | And 4 more authors.
Key Engineering Materials | Year: 2012

ZnO:Al thin films were deposited on low-iron glass substrates (size: 1100×1400 mm 2) in an in-line sputtering system, using ZnO:Al ceramic targets. The initially smooth films exhibit high transparencies (T≥85% for visible light) and excellent electrical properties (carrier concentration N=3.810×10 20cm -3, mobility μ=20.47 cm 2/V·s). The films, etched by diluted HCl for different time, appear roughness morphology with suitable angles and crater structure, used for controlling the light scattering properties of the textured ZnO:Al films. Moreover, the electrical properties are not affected by the etching process. Thus, it is possible to optimize separately the electro-optical and light trapping properties. The textured ZnO:Al films (haze 21.2%, 550 nm) were used as front contacts for amorphous silicon thin film solar cells prepared by PECVD, 6.5% conversion efficiency were obtained. © (2012) Trans Tech Publications.


Wu L.,Wuhan University of Technology | Zhao Q.,Wuhan University of Technology | Wu G.,Wuhan University of Technology | Miao D.,Jiang Su Xiuqiang Glasswork CO.
Advanced Materials Research | Year: 2012

Ga-doped ZnO (GZO) films were prepared on glass substrates at 523K temperature by non-reactive DC magnetron sputtering. The effects of sputtering power on microstructure and properties of the GZO films were investigated by X-ray diffraction (XRD), field-emission scanning electron microscope (FESEM), Hall effect measurements and UV-Vis-NIR spectrometer. The results show that GZO thin films exhibit high c-axis-orientation, and the intensity of peak increase as the enhanced of sputtering power; the increase of power will reduce the film's visible-light transmittance, but for all of the GZO thin films the average transmittance of the visible-light is above 80%. The sheet resistance of GZO films decreases when the sputtering power gradually heightened from 80W to 200W. The lowest resistivity of 6.559×10-4Ω&cm can be obtained in the condition of the sputtering power is 100W, and the lowest square resistance is 7.9Ω/□. © (2012) Trans Tech Publications, Switzerland.


Lu J.Y.,Wuhan University of Technology | Zhao Q.N.,Wuhan University of Technology | Hou S.H.,Wuhan University of Technology | Dong Y.H.,Jiang Su Xiuqiang Glasswork CO.
Advanced Materials Research | Year: 2012

TiO2-SiO2 double-layer films are prepared on glass substrates by sol-gel method and dip dipping method. The effect of aging time, heat treatment temperature and molar content of TiO2 for the optical properties of the films have been studied on this paper. And on this basis TiO2-SiO2/SiO2 double-layer films have been prepared as well as the transmittances in the visible range of it have been studied. The results of this paper show that the transmittances of TiO2-SiO2 films in the visible range are reduced with the increasing of sol aging time, molar content of TiO2 and heat treatment temperature; The TiO2-SiO2/SiO2 double-layer films prepared on this basis have antireflective effect, and the average transmittances in the visible range of it are increased nearly 4%-5% more than glass substrate and the transmittance peak reached 100%; the surfaces of the films are smooth; in addition, the cut sides of UV of TiO2-SiO2/SiO2 double-layer films are moved to infrared with the increase of TiO2 content. © (2012) Trans Tech Publications, Switzerland.


Zhao Q.-N.,Wuhan University of Technology | Dong Y.-H.,Jiangsu Xiuqiang Glasswork Co | Liu Y.,Wuhan University of Technology | Zhao Q.-Z.,Jiangsu Xiuqiang Glasswork Co | Zhao X.-J.,Wuhan University of Technology
Wuhan Ligong Daxue Xuebao/Journal of Wuhan University of Technology | Year: 2010

Silicon nitride thin films were deposited on glass substrates using magnetron reactive sputtering, under different flow ratio of Ar to N 2, and then the films were rapidly annealed at 730°C in atmospheric environment for 4.5 min. The refractive index of the films was measured using nkd-System Spectrophotometer, the chemical composition and ionic states were characterized with X-ray photoelectron spectroscope (XPS). The obtained results show that there is Si on the surface of the as-deposited films, with increasing the ratio of Ar to N 2, the refractive index increase; after rapid annealing, the Si increases and there is O-Si-N on the surface of the annealed films, which results the index decreasing. The results were discussed in details.


Wu S.,Wuhan University of Technology | Zhao Q.,Wuhan University of Technology | Miao D.,Wuhan University of Technology | Dong Y.,Jiangsu Xiuqiang Glasswork CO.
Journal of Rare Earths | Year: 2010

Sb-doped SnO2 (ATO)-(CeO2-TiO2) thin Films were deposited on glass substrates using the mixed solution including CeO 2-TiO2 precursor and ATO particles by sol-gel dip coating process. ATO particles were prepared using low-temperature hydrothermal process. The mixed molar ratio of ATO to (CeO2-TiO2) vs the properties of CeO2-TiO2 thin film was investigated. The optical properties of the films were characterized by UV-visible transmission and infrared reflection spectra, the sheet resistance of ATO particles and films were measured by rubber sheeter (MYI-50) and four-point probe (HisuperGroup Inc, SDY-5), the surface morphology and structure of the films were analyzed using 3D Digitale Mikroskop and X-ray diffraction (XRD), respectively. The results showed that the ATO precursor solution lost weight completely at about 500 °C, and the ATO particles was obtained, which indicated the same rutile lattice structure as SnO2. The glass substrates coated with ATO-(CeO2-TiO2) thin films showed better properties in antistatic electricity (104-106 Ω/), shielding UV (almost 100), visible light transmission (70) and infrared reflection (>30). © 2010 The Chinese Society of Rare Earths.


Liang H.Y.,Wuhan University of Technology | Zhao Q.N.,Wuhan University of Technology | Gao F.,Wuhan University of Technology | Yuan W.H.,Wuhan University of Technology | Dong Y.H.,Jiang Su Xiuqiang Glasswork Co.
Advanced Materials Research | Year: 2011

With a mixture gas of N2 and Ar, silicon nitride thin films were deposited on glass substrates by different radio frequency (RF) magnetron sputtering power without intentional substrate heating. The chemical composition, phase structure, surface morphology, optical properties, refractive index, hydrophobic properties of the films were characterized by X-ray energy dispersive spectroscopy(EDS), X-ray diffraction(XRD), field emission scanning electron microscopy(FESEM), ultraviolet-visible spectroscopy(UV-Vis), nkd-system spectrophotometer and CA-XP150 contact angle analyzer, respectively. The results showed that silicon nitride thin films were amorphous and rich in Si; the transmittance reduced but refractive index and surface roughness increased; and the hydrophobic properties of SiNx became better with the increase of RF power. © (2011) Trans Tech Publications.


Gao F.,Wuhan University of Technology | Zhao Q.,Wuhan University of Technology | Zhao X.,Wuhan University of Technology | Dong Y.,Jiang Su Xiuqiang Glasswork CO.
Advanced Materials Research | Year: 2011

Silicon Nitride thin films were deposited on glass substrates by r.f. magnetron sputtering with a mixture gas of N2 and Ar. The properties of the thin films vs substrate temperature have been investigated. The phase structure, surface morphology, chemical composition, thickness and optical properties of the films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray energy dispersive spectroscopy (EDS), ultraviolet-visible spectroscopy (UV-Vis) and nkd-system spectrophotometer. The results show that the films appear amorphous and crystalline structure at the substrate temperature of 20°C and 300°C , respectively, the atomic ratio of Si to N of the films is nearly 1:1, the transmittance in the ultraviolet-visible region is above 75%; with increasing substrate temperature the refractive index and the optical band gap increase, and the deposition rates of the films decreases. © (2011) Trans Tech Publications.


Zhao Q.N.,Wuhan University of Technology | Yuan W.H.,Wuhan University of Technology | Liang H.Y.,Wuhan University of Technology | Wang W.Y.,Wuhan University of Technology | And 2 more authors.
Advanced Materials Research | Year: 2011

The textured thin films of Aluminum-doped zinc oxide (AZO), prepared on glass substrates by magnetron sputtering, were treated under the environment of hydrogen plasma in plasma enhanced chemical vapor deposition (PECVD) chamber for different time. The structure and properties of the thin films before and after the treatment were characterized by X-ray diffraction (XRD), Atomic Force Microscopy (AFM), field-emission scanning electron microscope (FESEM), Hall effect measurements and UV-Vis -NIR spectrometer. The results obtained showed that, after the treatment, the crystal structure of the films was not obviously changed, the roughness of the films was reduced, the carrier concentration and Hall mobility of the films increased to a certain saturated level with the treatment time, and the conductivity of the films increased. The transmittance and optical band gap of the AZO films was not affected by plasma treatment. © (2011) Trans Tech Publications.


Dong Y.,Jiang Su Xiuqiang Glasswork CO. | Dong Y.,Wuhan University of Technology | Zhao Q.,Wuhan University of Technology | Wu S.,Wuhan University of Technology
Journal of Rare Earths | Year: 2010

Ultraviolet-shielding and conductive double functional films were composed of CeO2-TiO2 film and SnO2:Sb film deposited on glass substrates using sol-gel process. Ce(NO3)3· 6H2O and Ti(C4H9O4), SnCl 4 and SbCl3 were used as precursors of the two different functional films respectively. The CeO2-TiO2 films were deposited on glass substrates by sol-gel dip coating method, and then the SnO2: Sb films with different thickness were deposited on the pre-coated CeO2-TiO2 thin film glass substrates, finally, the substrates coated with double functional films were annealed at different temperatures. The optical and electrical properties of the CeO 2-TiO2 films and the double films were measured by UV-Vis spectrometer and four probe resistance measuring instrument. The crystal structures and surface morphology of the films were characterized using XRD and optical microscope, respectively. The obtained results show that the ultraviolet-shielding rate of the glass substrates with CeO2-TiO 2 films is not less than 90, and transmittance in visible lights can reach 65. With the thickness of the SnO2:Sb film increasing, its conductivity became better, and the surface resistance is about 260 /□ when the SnO2:Sb films were deposited 11 cycles of the dip on the pre-coated CeO2-TiO2 glass. The ultraviolet-shielding rate of the glass substrates with double functional films is higher than 97, and the peak transmittance in the visible lights is 72. Additionally, with increasing the heat treatment time, the Na+ of the glass substrates diffuses into the films, resulting in the particle size of SnO2 crystal smaller. © 2010 The Chinese Society of Rare Earths.


Patent
Jiangsu Xiuqiang glasswork Co. | Date: 2010-03-17

The invention relates to a method for producing iridescent crystal glass. The glass products produced with the method of present invention have the advantages of good streamline shape, natural color transition, and excellent visual effect, etc.; the method is helpful for accelerating product upgrade, improving product appearance and visual effects, and enhancing competence of products. Therefore, we paint iridescent crystal ink on glass products, and add patterns suitable for household electric appliances and buildings, thereby greatly improve the appearance of product. In addition, due to the high safety performance of toughened glass and suitability of patterns and colors, iridescent crystal glass products have been accepted by the consumers gradually. The method comprises the following steps: a. cutting; b. edge processing; c. toughening; d. ink preparation; e. iridescent crystal printing; f. drying: the drying time and drying temperature are controlled according to the properties of the mixed ink; the drying temperature is controlled at 120200C, and the drying time is controlled within 5-30 minutes.

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