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Wu L.,Wuhan University of Technology | Zhao Q.,Wuhan University of Technology | Wu G.,Wuhan University of Technology | Miao D.,Jiangsu Xiuqiang Glasswork Co.
Advanced Materials Research | Year: 2012

Ga-doped ZnO (GZO) films were prepared on glass substrates at 523K temperature by non-reactive DC magnetron sputtering. The effects of sputtering power on microstructure and properties of the GZO films were investigated by X-ray diffraction (XRD), field-emission scanning electron microscope (FESEM), Hall effect measurements and UV-Vis-NIR spectrometer. The results show that GZO thin films exhibit high c-axis-orientation, and the intensity of peak increase as the enhanced of sputtering power; the increase of power will reduce the film's visible-light transmittance, but for all of the GZO thin films the average transmittance of the visible-light is above 80%. The sheet resistance of GZO films decreases when the sputtering power gradually heightened from 80W to 200W. The lowest resistivity of 6.559×10-4Ω&cm can be obtained in the condition of the sputtering power is 100W, and the lowest square resistance is 7.9Ω/□. © (2012) Trans Tech Publications, Switzerland.


Zhao Q.N.,Wuhan University of Technology | Yuan W.H.,Wuhan University of Technology | Liang H.Y.,Wuhan University of Technology | Wang W.Y.,Wuhan University of Technology | And 2 more authors.
Advanced Materials Research | Year: 2011

The textured thin films of Aluminum-doped zinc oxide (AZO), prepared on glass substrates by magnetron sputtering, were treated under the environment of hydrogen plasma in plasma enhanced chemical vapor deposition (PECVD) chamber for different time. The structure and properties of the thin films before and after the treatment were characterized by X-ray diffraction (XRD), Atomic Force Microscopy (AFM), field-emission scanning electron microscope (FESEM), Hall effect measurements and UV-Vis -NIR spectrometer. The results obtained showed that, after the treatment, the crystal structure of the films was not obviously changed, the roughness of the films was reduced, the carrier concentration and Hall mobility of the films increased to a certain saturated level with the treatment time, and the conductivity of the films increased. The transmittance and optical band gap of the AZO films was not affected by plasma treatment. © (2011) Trans Tech Publications.


Liang H.Y.,Wuhan University of Technology | Zhao Q.N.,Wuhan University of Technology | Gao F.,Wuhan University of Technology | Yuan W.H.,Wuhan University of Technology | Dong Y.H.,Jiangsu Xiuqiang Glasswork Co.
Advanced Materials Research | Year: 2011

With a mixture gas of N2 and Ar, silicon nitride thin films were deposited on glass substrates by different radio frequency (RF) magnetron sputtering power without intentional substrate heating. The chemical composition, phase structure, surface morphology, optical properties, refractive index, hydrophobic properties of the films were characterized by X-ray energy dispersive spectroscopy(EDS), X-ray diffraction(XRD), field emission scanning electron microscopy(FESEM), ultraviolet-visible spectroscopy(UV-Vis), nkd-system spectrophotometer and CA-XP150 contact angle analyzer, respectively. The results showed that silicon nitride thin films were amorphous and rich in Si; the transmittance reduced but refractive index and surface roughness increased; and the hydrophobic properties of SiNx became better with the increase of RF power. © (2011) Trans Tech Publications.


Gao F.,Wuhan University of Technology | Zhao Q.,Wuhan University of Technology | Zhao X.,Wuhan University of Technology | Dong Y.,Jiangsu Xiuqiang Glasswork Co.
Advanced Materials Research | Year: 2011

Silicon Nitride thin films were deposited on glass substrates by r.f. magnetron sputtering with a mixture gas of N2 and Ar. The properties of the thin films vs substrate temperature have been investigated. The phase structure, surface morphology, chemical composition, thickness and optical properties of the films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray energy dispersive spectroscopy (EDS), ultraviolet-visible spectroscopy (UV-Vis) and nkd-system spectrophotometer. The results show that the films appear amorphous and crystalline structure at the substrate temperature of 20°C and 300°C , respectively, the atomic ratio of Si to N of the films is nearly 1:1, the transmittance in the ultraviolet-visible region is above 75%; with increasing substrate temperature the refractive index and the optical band gap increase, and the deposition rates of the films decreases. © (2011) Trans Tech Publications.


Dong Y.,Jiangsu Xiuqiang Glasswork Co. | Dong Y.,Wuhan University of Technology | Zhao Q.,Wuhan University of Technology | Wu S.,Wuhan University of Technology
Journal of Rare Earths | Year: 2010

Ultraviolet-shielding and conductive double functional films were composed of CeO2-TiO2 film and SnO2:Sb film deposited on glass substrates using sol-gel process. Ce(NO3)3· 6H2O and Ti(C4H9O4), SnCl 4 and SbCl3 were used as precursors of the two different functional films respectively. The CeO2-TiO2 films were deposited on glass substrates by sol-gel dip coating method, and then the SnO2: Sb films with different thickness were deposited on the pre-coated CeO2-TiO2 thin film glass substrates, finally, the substrates coated with double functional films were annealed at different temperatures. The optical and electrical properties of the CeO 2-TiO2 films and the double films were measured by UV-Vis spectrometer and four probe resistance measuring instrument. The crystal structures and surface morphology of the films were characterized using XRD and optical microscope, respectively. The obtained results show that the ultraviolet-shielding rate of the glass substrates with CeO2-TiO 2 films is not less than 90, and transmittance in visible lights can reach 65. With the thickness of the SnO2:Sb film increasing, its conductivity became better, and the surface resistance is about 260 /□ when the SnO2:Sb films were deposited 11 cycles of the dip on the pre-coated CeO2-TiO2 glass. The ultraviolet-shielding rate of the glass substrates with double functional films is higher than 97, and the peak transmittance in the visible lights is 72. Additionally, with increasing the heat treatment time, the Na+ of the glass substrates diffuses into the films, resulting in the particle size of SnO2 crystal smaller. © 2010 The Chinese Society of Rare Earths.

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