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Wu W.-J.,Jiangnan University | Wu W.-J.,Suntech Power | Zhang S.,Jiangnan University | Zhang S.,Suntech Power | And 8 more authors.
Rengong Jingti Xuebao/Journal of Synthetic Crystals | Year: 2011

Surface texturization of monocrystalline silicon for solar cells has been a mature technique, but it costs too long time. In order to improve productive efficiency, the effect of temperature, duration of time, composition and removment of the surface damages on surface texturization in the NaOH/IPA solution with shorter time was studied. Well-proportioned texturisation were obtained in 2.5%NaOH and 10%IPA aqueous solution at 80 °C for 15 min. The texturization is better when adding 3%Na2SiO3 in the solution, and the lowest reflectivity could be 9.5%. But it is hard to obtain perfect texturization after removing surface damages. The work using other additives (1, 4-Cyclohexanediol, CHX and Sodium dodecylbenzene sulfonate, SDBS) instead of IPA were studied, and IPA are still considered to be the most suitable additive.

Wu W.,Jiangnan University | Wu W.,Suntech Power | Zhang S.,Jiangnan University | Zhang S.,Suntech Power | And 7 more authors.
Kuei Suan Jen Hsueh Pao/Journal of the Chinese Ceramic Society | Year: 2011

The texture monocrystalline silicon was prepared using tetramethylammonium hydroxide (TMAH)/isopropyl alcohol (IPA) as an escharotic and additive sodium dodecyl sulfate (SDS) or Na2SiO3 as a surfactant. The effects of the removal of surface damage of the silicon wafer, TMAH conversation, etching time and temperature in the solution and the addition of SDS on the surface texturisation of silicon were investigated. The results indicate that the cleaning and removing of the surface damage of the silicon wafer before texturing is unfavorable to the productive efficiency. The texture with a uniform pyramid structure and a rather low loss of the incident light radiation could be formed at 2%(in mass, the same below) TMAH/5% IPA solution at 80 °C for 10 min. In addition, the addition of Na2SiO3or SDS into the TMAH/IPA solution could reduce the pyramid size and the surface reflectivity of the silicon wafer.

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