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Li C.-T.,National Tsing Hua University | Hsieh F.,Jiangsu Aide Solar Energy Technology Co. | Wang L.,National Tsing Hua University
Solar Energy | Year: 2013

It is known that surface passivation plays a significant role in upgrading solar cell performance. In this study, silicon thin films deposited by LPCVD (low pressure chemical vapor deposition) are used to passivate the surface of solar-grade p-type crystalline silicon solar cells for the first time. Intrinsic amorphous silicon films and poly-silicon films were obtained on the front and rear surfaces of solar wafers at the deposition temperatures of 560 °C and 620 °C, respectively. Both kinds of silicon films proved to be effective in improving the open-circuit voltage owing to surface passivation for crystalline silicon solar cells. Optical spectral responses in the short and long wavelength ranges (e.g. the range 300-600. nm and the range 850-1100. nm, respectively) also showed an improvement in photogenerated current resulting from reduced surface recombination rates on the front and back surface. © 2012 Elsevier Ltd. Source


Patent
National Tsing Hua University and Jiangsu Aide Solar Energy Technology Co. | Date: 2012-01-18

A solar cell having buried contacts is provided. Curved trenches are formed on a surface of a Si substrate to form the buried contacts. The curved trenches have deep depths with wafer break prevented. The buried contacts have good efficiency on collecting electrons obtained from conversion by the longer wavelength light. The present invention is fit for mass production with a high yield, a simple fabrication procedure, a low cost and a good performance.


Patent
National Tsing Hua University and Jiangsu Aide Solar Energy Technology Co. | Date: 2011-07-27

The present disclosure coats an amorphous silicon (Si) layer on a doped Si substrate of a solar cell. Or, a silicon dioxide (SiO


Li C.-T.,National Tsing Hua University | Hsieh F.,National Tsing Hua University | Yan S.,Jiangsu Aide Solar Energy Technology Co. | Wan C.,Jiangsu Aide Solar Energy Technology Co. | And 3 more authors.
International Journal of Photoenergy | Year: 2014

We demonstrate the performance improvement of p-type single-crystalline silicon (sc-Si) solar cells resulting from front surface passivation by a thin amorphous silicon (a-Si) film deposited prior to phosphorus diffusion. The conversion efficiency was improved for the sample with an a-Si film of ∼5 nmthickness deposited on the front surface prior to high-temperature phosphorus diffusion,with respect to the samples with an a-Si film deposited on the front surface after phosphorus diffusion. The improvement inconversion efficiency is 0.4% absolute with respect to a-Si film passivated cells, that is, the cells with an a-Si film deposited onthe front surface after phosphorus diffusion. The new technique provided a 0.5% improvement in conversion efficiency comparedto the cells without a-Si passivation. Such performance improvements result from reduced surface recombination as well as loweredcontact resistance, the latter of which induces a high fill factor of the solar cell. Copyright © 2014 Ching-Tao Li et al. Source

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