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Hao R.,South China University of Technology | Hao R.,Jiangmen Orient Opto Electronics Co. | Ma X.,Jiangmen Orient Opto Electronics Co. | Ma K.,Jiangmen Orient Opto Electronics Co. | And 2 more authors.
Bandaoti Guangdian/Semiconductor Optoelectronics | Year: 2013

The high fraction of indium (In) in the multi-quantum wells (MQWs) and the large, lattice mismatch between InN and GaN dramatically decrease the stability of InGaN-based green light emitting diodes (LEDs). Because the growth temperature of p-GaN is much higher than that of MQWs, the growth of p-GaN will impact the quality of MQWs greatly. In this work, it is focused on the influence of the growth temperature and the thickness of p-GaN on the performance of green LEDs, and it is revealed that too high growth temperature or thickness will have negative impact on the stability of In fraction in MQWs, which results in the broadening of emission peak and the reduction in luminous efficiency. Accordingly, the optimized growth temperature and thickness are proposed. Furthermore, the influence of MQWs protection layer on green LEDs performance is discussed and it is found that this protection layer is beneficial to the stability of the emission wavelength of green LEDs. Source


Hao R.,South China University of Technology | Hao R.,Jiangmen Orient Opto Electronics Co. | Ma X.,Jiangmen Orient Opto Electronics Co. | Ma K.,Jiangmen Orient Opto Electronics Co. | And 2 more authors.
Bandaoti Guangdian/Semiconductor Optoelectronics | Year: 2013

The high fraction of indium (In) in the multi-quantum wells (MQWs) and the large lattice mismatch between InN and GaN make quantum confinement Stark effect (QCSE) more remarkable in InGaN-based MQW green LEDs. The shielding of the built-in electric field caused by QCSE can effectively improve the efficiency of carrier radiative recombination in LEDs. The effects of the Si-doping in barriers of MQWs on the performance of green LEDs were investigated. It is found that a moderate Si doping of ~3.4×1016 cm-3 can effectively increase the interface quality of MQWs structure, reduce the In concentration fluctuation, and also shield the polarized electric field when a forward current is applied. Meanwhile, the transverse expansibility of current is also enhanced and the light-emitting area in active region is increased. However, too much Si-doping in the barriers of MQWs results in a series of harmful effects on the performance of green LEDs, such as larger lattice mismatch between wells and barriers in MQWs and higher leakage current, which deteriorates the luminous efficiency of LEDs. Source

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