Jazz Semiconductor Inc.

Newport Beach, CA, United States

Jazz Semiconductor Inc.

Newport Beach, CA, United States
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Stefanov K.D.,Open University Milton Keynes | Zhang Z.,Rutherford Appleton Laboratory | Damerell C.,Rutherford Appleton Laboratory | Burt D.,E2v Technologies | Kar-Roy A.,Jazz Semiconductor Inc.
Proceedings of SPIE - The International Society for Optical Engineering | Year: 2013

Buried channel (BC) MOSFETs are known to have better noise performance than surface channel (SC) MOSFETs when used as source followers in modern Charge Coupled Devices (CCD). CMOS image sensors find increasing range of applications and compete with CCDs in high performance imaging, however BC transistors are rarely used in CMOS. As a part of the development of charge storage using BC CCDs in CMOS, we designed and manufactured deep depletion BC n-type MOSFETs in 0.18 μm CMOS image sensor process. The transistors are designed in a way similar to the source followers in a typical BC CCD. In this paper we report the results from their characterization and compare with enhancement mode and "zero-threshold" SC devices. In addition to the detailed current-voltage and noise measurements, semiconductor device simulation results are presented to illustrate and understand the different conditions affecting the channel conduction and the noise performance of the BC transistors at low operating voltages. We show that the biasing of the BC transistors has to be carefully adjusted for optimal operation, and that their noise performance at the right operating conditions can be superior to SC devices, despite their lower gain as in-pixel source followers. © 2013 SPIE.


Guoxuan Q.,University of Wisconsin - Madison | Guoxuan Q.,Tianjin University | Ningyue J.,University of Wisconsin - Madison | Ningyue J.,Avago Technologies | And 8 more authors.
Semiconductor Science and Technology | Year: 2010

The performance of a SiGe heterojunction bipolar transistor (HBT) millimetre-wave power amplifier (PA) operating at cryogenic temperature was reported and analysed for the first time. A 24 GHz two-stage medium PA employing common-emitter and common-base SiGe power HBTs in the first and the second stage, respectively, showed a significant power gain increase at 77 K in comparison with that measured at room temperature. Detailed analyses indicate that cryogenic operation of SiGe HBT-based PAs mainly affects (improves) the performance of the SiGe HBTs in the circuits due to transconductance enhancement through magnified, favourable changes of SiGe bandgap due to cooling (ΔE g/kT) and minimized thermal effects, with little influence on the passive components of the circuits. © 2010 IOP Publishing Ltd.


Stefanov K.D.,Open University Milton Keynes | Zhang Z.,Rutherford Appleton Laboratory | Damerell C.,Rutherford Appleton Laboratory | Burt D.,E2v Technologies | Kar-Roy A.,Jazz Semiconductor Inc.
IEEE Transactions on Electron Devices | Year: 2013

Buried-channel (BC) MOSFETs are known to have better noise performance than their surface-channel (SC) counterparts when used as a source follower in modern chargecoupled devices (CCDs). CMOS image sensors are finding increasing applications and compete with CCDs in highperformance imaging, but BC transistors are rarely used in CMOS. As a part of the development of charge storage using CCDs in CMOS, we designed and manufactured deep-depletion BC n-type MOSFETs in 0.18-?m CMOS image sensor process. The BC transistors are designed in a way similar to the source followers in a typical BC CCD, and feature deep n-channel implant and threshold voltage exceeding ?2.5 V. In this paper, we report the results from their characterization and compare them with normal enhancement mode and "zero-threshold" SC devices. In addition to the detailed current-voltage and noise measurements, 2-D semiconductor device simulation results are presented to illustrate and understand the different conditions affecting the channel conduction and the noise performance of the BC transistors. We show that under optimal bias conditions the noise performance of the BC transistors can be superior despite their lower gain as in-pixel source followers. © 1963-2012 IEEE.


Moen K.A.,Georgia Institute of Technology | Moen K.A.,Jazz Semiconductor Inc. | Chakraborty P.S.,Georgia Institute of Technology | Raghunathan U.S.,Georgia Institute of Technology | And 2 more authors.
IEEE Transactions on Electron Devices | Year: 2012

We study mixed-mode stress degradation in SiGe HBTs using a novel physical TCAD model in which the processes of hot carrier generation within the semiconductor, carrier propagation to the oxide interface, and formation of interface traps are directly modeled. Transient degradation simulations using a calibrated 2-D SiGe HBT model correlate well with measured data. With this novel simulation tool, we investigate the bias dependence and location of interface traps and show that secondary holes produced by impact ionization are the dominant carrier to damage the emitter-base (EB) spacer oxide interface, confirming previously reported results. We also compare in detail trap formation at the EB spacer and shallow-trench-isolation (STI) oxide interfaces as a function of time and stress condition. At the STI oxide interfaces, we find that hot electrons and holes each dominate trap formation in different regions, and the hot carriers that reach the STI predominately originate outside of the selectively implanted collector, revealing the important role played by dopant diffusion from the extrinsic base of quasi-self-aligned SiGe HBTs. © 2012 IEEE.


Qin G.,Tianjin University | Ma J.,Tianjin University | Jiang N.,University of Wisconsin - Madison | Ma Z.,University of Wisconsin - Madison | And 2 more authors.
Journal of Circuits, Systems and Computers | Year: 2013

The performances of proton irradiated silicon-germanium (SiGe) power heterojunction bipolar transistors (HBTs) at extreme temperatures (liquid nitrogen temperature and high stage-temperature of 120°C with junction temperature over 160°C) are reported in this work. SiGe power HBTs with total emitter area of ∼ 1460 μm2 are fabricated in a commercial BiCMOS process, and irradiated with proton at different fluences from 1 × 1012 p/cm2 to 5 × 1013 p/cm2. Experimental characterizations are conducted for pre- and post-radiation devices at room temperature, cryogenic temperature and high temperature. The results demonstrate that the proton-irradiated SiGe power HBTs are naturally suitable for electronic operations at extreme temperatures. Specifically, investigation of proton radiation on SiGe power HBTs at liquid nitrogen temperature (77 K) indicates a significant potential for space applications. In addition, SiGe power HBTs show better tolerance of proton radiation at high temperature of 120°C (junction temperature over 160°C). SiGe power HBTs demonstrate great potential in power amplification for wireless communication systems under severe radiation and extreme temperature environment (cryogenic and high temperatures) even without any intentional radiation hardening. © World Scientific Publishing Company.


Qin G.,Tianjin University | Qin G.,University of Wisconsin - Madison | Yan Y.,Tianjin University | Jiang N.,University of Wisconsin - Madison | And 4 more authors.
Microelectronics Reliability | Year: 2012

The radio frequency (RF) characteristics of proton irradiated large-area silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) at extreme temperatures (liquid nitrogen temperature of 77 K and high temperature of ∼430 K) are reported in this work. Large emitter area high-power SiGe HBTs fabricated in a commercial BiCMOS process were irradiated with proton, at various fluences from 1 × 10 12 p/cm 2 to 5 × 10 13 p/cm 2. Small-signal ac experimental characterizations were achieved for pre- and post-radiation devices at room temperature, cryogenic and high temperatures. We show that proton radiated large-area SiGe HBTs are naturally suitable for electronic operations at extreme temperatures. Investigation of proton radiation on large-area SiGe HBTs at liquid nitrogen temperature (77 K) demonstrates great potential of SiGe power HBTs for space applications. Moreover, performance of proton radiated SiGe power HBTs at high temperature of ∼430 K indicates a better tolerance of proton radiation than room temperature. Possible underlying mechanisms for the improvement of radiation robustness at cryogenic and high temperatures are discussed. The results demonstrate the possibility of using large-area SiGe HBTs in power amplification for wireless applications under severe radiation and extreme temperature environment without any intentional radiation hardening. © 2012 Elsevier Ltd. All rights reserved.


Qin G.,Tianjin University | Qin G.,University of Wisconsin - Madison | Ma J.,Tianjin University | Wang G.,University of Wisconsin - Madison | And 3 more authors.
2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010 | Year: 2010

The influence of collector region design (used to realize different breakdown voltages) on the linearity characteristics of SiGe power HBTs is investigated experimentally via the measurements of third order intermodulation distortion (IMD3). It is shown that collector doping concentration has significant influence on devices' characteristics. SiGe power HBTs with higher collector doping concentration exhibit both better linearity characteristic and better RF power performance than the low collector doping concentration HBTs. © 2010 IEEE.


Qin G.,Tianjin University | Qin G.,University of Wisconsin - Madison | Jiang N.,University of Wisconsin - Madison | Ma J.,Tianjin University | And 3 more authors.
2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011 | Year: 2011

The dc performances of proton irradiated silicon-germanium (SiGe) power heterojunction bipolar transistors (HBTs) at cryogenic temperature are reported in this work. Large emitter area high-power SiGe HBTs fabricated in a commercial BiCMOS process were irradiated with proton, at different fluences from 1×10 12 p/cm 2 to 5×10 13 p/cm 2. We show that proton radiated SiGe power HBTs are naturally suitable for electronic operations at cryogenic temperature. Specifically, investigation of proton radiation on SiGe power HBTs at liquid nitrogen temperature (77K) indicates a significant potential for space applications. The results demonstrate the potential of SiGe power HBTs in power amplification for wireless applications under severe radiation and extreme temperature environment (cryogenic) even without any intentional radiation hardening. © 2011 IEEE.


Thibeault T.,Jazz Semiconductor Inc. | Preisler E.,Jazz Semiconductor Inc. | Zheng J.,Jazz Semiconductor Inc. | Lao L.,Jazz Semiconductor Inc. | And 2 more authors.
Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting | Year: 2010

This paper details a new 14V Complementary BiCMOS (CBiCMOS) addition to the TowerJazz SBC35 family of BiCMOS technologies. The SBC35 family previously supported BVceo values up to 6V. The bipolar architecture is nearly identical with that used in the lower voltage technologies, leveraging 10 years of manufacturing history. The complementary bipolar transistors are paired with 5V CMOS currently available in our SBC35 family. This technology offers high RF performance 14V NPN transistors and PNP transistors with low process complexity. The paper describes a simplified process flow, results of optimization, and a demonstration of the key device performance metrics. ©2010 IEEE.

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