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Baba T.,Photonics Electronics Technology Research Association PETRA | Baba T.,Japanese Institute for Photonics Electronics Convergence System Technology | Akiyama S.,Photonics Electronics Technology Research Association PETRA | Akiyama S.,Japanese Institute for Photonics Electronics Convergence System Technology | And 12 more authors.
Optics Express | Year: 2013

We achieved 50-Gb/s operation of a ring-resonator-based silicon modulator for the first time. The pin-diode phase shifter, which consists of a side-wall-grating waveguide, was loaded into the ring resonator. The forward-biased operation mode was applied, which exhibited a VπL as small as 0.28 V·cm at 25 GHz. The driving voltage and optical insertion loss at 50-Gb/s were 1.96 Vpp and 5.2 dB, respectively. © 2013 Optical Society of America.


Saito S.,Photonics Electronics Technology Research Association PETRA | Saito S.,Japanese Institute for Photonics Electronics Convergence System Technology | Saito S.,Hitachi Ltd. | Oda K.,Photonics Electronics Technology Research Association PETRA | And 7 more authors.
Applied Physics Letters | Year: 2011

We propose a germanium fin light-emitting diode for a monolithic light source on a Si photonics chip. The germanium fins were fabricated by the oxidation condensation of silicon-germanium sidewalls epitaxially grown on silicon fins. We found that a tensile stress is applied to the pure germanium fins by the difference of the thermal expansion coefficient with that of the surrounding oxide. The electroluminescence spectra were consistent with those expected from direct recombination in germanium with a tensile stress. The strong immunity of germanium fins against high current densities would be favourable to achieve population inversions by electrical pumping. © 2011 American Institute of Physics.


Hatori N.,Photonics Electronics Technology Research Association PETRA | Hatori N.,Japanese Institute for Photonics Electronics Convergence System Technology | Shimizu T.,Photonics Electronics Technology Research Association PETRA | Shimizu T.,Japanese Institute for Photonics Electronics Convergence System Technology | And 14 more authors.
Journal of Lightwave Technology | Year: 2014

This paper reports a hybrid integrated light source fabricated on a Si platform using a spot-size converter (SSC) with a trident Si waveguide. Low-loss coupling for 1.55 μm and 1.3 μm wavelengths was achieved with merely the simple planar form of a Si waveguide with no use of complicated structures such as vertical tapers or an extra dielectric core overlaid on the waveguide. The coupling loss tolerance up to a 1 dB loss increase was larger than the accuracy of our passive alignment technology. The coupling efficiency was quite robust against manufacturing variations in the waveguide width compared with that of a conventional SSC with an inverse taper waveguide. A multi-channel light source with highly uniform output power and a high-temperature light source were fabricated with a 1.55 μm quantum well laser and a 1.3 μm quantum dot laser, respectively. The integration scheme we report can be used to fabricate light sources for high-density, multi-channel Si optical interposers. © 2014 IEEE.


Saito S.,Japanese Institute for Photonics Electronics Convergence System Technology
2011 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2011 | Year: 2011

Monolithic light source is the only missing component to realize all silicon based photonics for high density and low power optical interconnections. In this paper, we will review our attempts to develop light-emitting devices based on silicon quantum wells made by state-of-the-art silicon process. © 2011 IEEE.


Saito S.-I.,Japanese Institute for Photonics Electronics Convergence System Technology
IEEE International Conference on Group IV Photonics GFP | Year: 2011

I will review our attempts to develop monolithic light sources for silicon photonics. Modern silicon fabrication technology is matured enough to make light-emitting silicon and germanium quantum wells, called fins, by top-down processes. © 2011 IEEE.


Suda S.,Japan National Institute of Advanced Industrial Science and Technology | Tanizawa K.,Japan National Institute of Advanced Industrial Science and Technology | Sakakibara Y.,Japan National Institute of Advanced Industrial Science and Technology | Kamei T.,Japan National Institute of Advanced Industrial Science and Technology | And 10 more authors.
Optics Letters | Year: 2012

Ultra-fast carrier decay, recently discovered in a hydrogenated amorphous silicon waveguide, can be exploited for pattern-effect-free all-optical signal processing based on optical Kerr nonlinearity. In this study, we utilized a 10 Gbit/s RZ-OOK data stream as a pump for degenerate four-wave mixing in a low-loss hydrogenated amorphous silicon waveguide. The propagation loss of the waveguide used was 1.0 ± 0.2 dB/cm at 1550 nm. Unlike crystalline silicon waveguides, no noticeable difference was observed in the BER characteristics between the cases of PRBS 27-1 and 231-1. © 2012 Optical Society of America.


Tung B.T.,Japan National Institute of Advanced Industrial Science and Technology | Tung B.T.,Japanese Institute for Photonics Electronics Convergence System Technology | Watanabe N.,Japan National Institute of Advanced Industrial Science and Technology | Kato F.,Japan National Institute of Advanced Industrial Science and Technology | And 3 more authors.
Proceedings - Electronic Components and Technology Conference | Year: 2014

In this paper, the integration accuracy of conventional flipchip bonding is effectively enhanced by means of automatically maintaining the alignment between the chip and substrate during the time that offsets may take place, i.e., bonding conditions applying period. The conventional bonding bump and pad elements have been appropriately modified to construct a concave-convex pair, i.e., self-aligned interconnection elements (SIEs). By this way, the post-bond offsets are determined by the SIEs, aiming at highly reproducible sub-micron range bonding precision. Moreover, because the post-bond offsets are guaranteed by the SIEs, ultrasonic assisted technique can be applied to make reliable bonds at acceptably low temperatures, while still maintaining the integration accuracy. Ultrafine-pitch (i.e. down to 10 μm) copper bump interconnections were realized using the proposed integration approach. © 2014 IEEE.


Arakawa Y.,Japanese Institute for Photonics Electronics Convergence System Technology
16th Opto-Electronics and Communications Conference, OECC 2011 | Year: 2011

We overview a national project "Photonics-Electronics Convergence System Technology (PECST)" which aims at both demonstration of high transmission-density inter-chip interconnects on silicon substrates and investigation of innovative technologies for future silicon photonics. © 2011 National Sun Yat-Sen Univ.


Arakawa Y.,University of Tokyo | Arakawa Y.,Japanese Institute for Photonics Electronics Convergence System Technology
2014 OptoElectronics and Communication Conference, OECC 2014 and Australian Conference on Optical Fibre Technology, ACOFT 2014 | Year: 2014

We discuss recent advances in quantum dot lasers for telecom and silicon photonics applications, including high-temperature operation (>100°C) of a silicon optical interposer integrating quantum dot laser arrays with a high bandwidth density. © 2014 Engineers Australia.


Takei R.,Japan National Institute of Advanced Industrial Science and Technology | Takei R.,Japanese Institute for Photonics Electronics Convergence System Technology | Manako S.,Japan National Institute of Advanced Industrial Science and Technology | Manako S.,Japanese Institute for Photonics Electronics Convergence System Technology | And 8 more authors.
Optics Express | Year: 2014

We demonstrate a submicrometer-scale hydrogenated amorphous silicon (a-Si:H) waveguide with a record low propagation loss of 0.60 ± 0.02 dB/cm because of the very low infrared optical absorption of our low defect a-Si:H film, the optimized waveguide structure and the fabrication process. The waveguide has a core with a thickness of 440 nm and a width of 780 nm that underlies a 100-nm-thick ridge structure, and is fabricated by low-cost i-line stepper photolithography and with low-temperature processing at less than 350°C, making it compatible with the backend process of complementary metal oxide semiconductor (CMOS) fabrication. © 2014 Optical Society of America.

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