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Suda S.,Japan National Institute of Advanced Industrial Science and Technology | Tanizawa K.,Japan National Institute of Advanced Industrial Science and Technology | Sakakibara Y.,Japan National Institute of Advanced Industrial Science and Technology | Kamei T.,Japan National Institute of Advanced Industrial Science and Technology | And 10 more authors.
Optics Letters | Year: 2012

Ultra-fast carrier decay, recently discovered in a hydrogenated amorphous silicon waveguide, can be exploited for pattern-effect-free all-optical signal processing based on optical Kerr nonlinearity. In this study, we utilized a 10 Gbit/s RZ-OOK data stream as a pump for degenerate four-wave mixing in a low-loss hydrogenated amorphous silicon waveguide. The propagation loss of the waveguide used was 1.0 ± 0.2 dB/cm at 1550 nm. Unlike crystalline silicon waveguides, no noticeable difference was observed in the BER characteristics between the cases of PRBS 27-1 and 231-1. © 2012 Optical Society of America. Source


Saito S.-I.,Japanese Institute for Photonics Electronics Convergence System Technology
IEEE International Conference on Group IV Photonics GFP | Year: 2011

I will review our attempts to develop monolithic light sources for silicon photonics. Modern silicon fabrication technology is matured enough to make light-emitting silicon and germanium quantum wells, called fins, by top-down processes. © 2011 IEEE. Source


Saito S.,Japanese Institute for Photonics Electronics Convergence System Technology
2011 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2011 | Year: 2011

Monolithic light source is the only missing component to realize all silicon based photonics for high density and low power optical interconnections. In this paper, we will review our attempts to develop light-emitting devices based on silicon quantum wells made by state-of-the-art silicon process. © 2011 IEEE. Source


Arakawa Y.,Japanese Institute for Photonics Electronics Convergence System Technology
16th Opto-Electronics and Communications Conference, OECC 2011 | Year: 2011

We overview a national project "Photonics-Electronics Convergence System Technology (PECST)" which aims at both demonstration of high transmission-density inter-chip interconnects on silicon substrates and investigation of innovative technologies for future silicon photonics. © 2011 National Sun Yat-Sen Univ. Source


Miura M.,Japanese Institute for Photonics Electronics Convergence System Technology | Miura M.,Photonics Electronics Technology Research Association PETRA | Fujikata J.,Japanese Institute for Photonics Electronics Convergence System Technology | Fujikata J.,Photonics Electronics Technology Research Association PETRA | And 8 more authors.
Optics Express | Year: 2013

Waveguide integrated MSM (metal-semiconductor-metal) Germanium (Ge) photodetectors (PDs) with a SiGe capping layer were exploited for silicon photonics integration. Under optimized epitaxial growth conditions, the capping layer passivated the Ge surface, resulting in sufficiently low dark current of the PDs. In addition, the PDs exhibited a narrower distribution of the dark current than PDs with a Si capping layer, probably due to the lower surface leakage current. Low-noise differential receivers with uniform MSM Ge PDs exhibiting 10 Gbps data transmission were realized. ©2013 Optical Society of America. Source

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