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Yamaguchi M.,Research Institute Japan Society for The Promotion of Machine Industry | Fujitsuka M.,Research Institute Japan Society for The Promotion of Machine Industry | Ueno S.,Research Institute Japan Society for The Promotion of Machine Industry | Miura I.,Renishaw | And 2 more authors.
Materials Science Forum | Year: 2010

Raman spectroscopic study is carried on the Vickers indented area on the surface of a single crystal silicon carbide (4H- and 6H-SiC) as a nondestructive structure probe to investigate a residual stress and crystal structure. LO phonon frequency shifts and the broad and weak bands around LO phonon band were observed. The residual strain field around the indentation is discussed. © (2010) Trans Tech Publications. Source


Kozu T.,Renishaw | Kozu T.,Japan National Defense Academy | Yamaguchi M.,Akita University | Fujitsuka M.,Research Institute Japan Society for The Promotion of Machine Industry | And 2 more authors.
Materials Science Forum | Year: 2015

In this work, we analyze residual stress on 4H-SiC with Raman spectroscopy using for excitation deep ultraviolet (DUV) laser 266nm. The residual stress area in 4H-SiC wafer is created by Vickers Hardness test technique and 2D DUV Raman map is measured. The result is different from Raman spectra excited with visible laser, because DUV light penetration is much shallower than visible light. DUV Raman is superior to bring information from the uppermost surface of the sample. © (2015) Trans Tech Publications, Switzerland. Source

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