Time filter

Source Type

A method for authenticating a security mark containing a photochromic compound can provide higher security performance. The method comprises a process of irradiating a security mark containing a photochromic compound with excitation light, a process of acquiring first security information on a time-dependent change in the absorption spectrum and/or reflection spectrum of the security mark after the irradiation with excitation light, and a process of checking the acquired first security information against previously acquired first security information on the security mark. In this method, the security mark preferably contains two or more photochromic compounds different from one another in color development and/or in quenching rate after the color development in a photochromic reaction.


Patent
Japan Science and Technology Agency | Date: 2016-11-15

A thin film transistor 100 according to the invention includes a gate electrode 20, a channel 44, and a gate insulating layer 34 provided between the gate electrode 20 and the channel 44 and made of oxide (possibly containing inevitable impurities, this applies to oxide hereinafter) containing lanthanum and zirconium. The channel 44 is made of channel oxide including first oxide containing indium, zinc, and zirconium (Zr) having an atomic ratio of 0.015 or more and 0.075 or less relative to indium assumed to be 1 in atomic ratio, second oxide containing indium and zirconium (Zr) having an atomic ratio of 0.055 or more and 0.16 or less relative to the indium (In) assumed to be 1 in atomic ratio, or third oxide containing indium and lanthanum having an atomic ratio of 0.055 or more and 0.16 or less relative to the indium (In) assumed to be 1 in atomic ratio.


The present disclosure includes predicting a three-dimensional structure of one residue mutant of a membrane protein where respective amino acid residues have been substituted by all amino acids, calculating a solvation entropy change in formation of a tertiary structure from a primary structure or formation of the tertiary structure from secondary-structure units within a transmembrane segment, and extracting a candidate of an amino acid mutant to be thermostabilized based on a difference between a solvation entropy change in the membrane protein and a solvation entropy change in the amino acid mutant.


Patent
Canon Kabushiki Kaisha, Tokyo Institute of Technology, Japan Science and Technology Agency | Date: 2017-01-10

A novel amorphous oxide applicable, for example, to an active layer of a TFT is provided. The amorphous oxide comprises microcrystals.


Patent
Tokyo Institute of Technology, Japan Science and Technology Agency | Date: 2016-12-19

If a conductive mayenite compound having a large specific surface area is obtained, the usefulness thereof in respective applications is remarkably increased. A conductive mayenite compound powder having a conduction electron density of 10^(15 )cm^(3 )or more and a specific surface area of 5 m^(2)g^(1 )or more is produced by: the following steps: (1) forming a precursor powder by subjecting a mixture of a starting material powder and water to a hydrothermal treatment; (2) forming a mayenite compound powder by heating and dehydrating the precursor powder; (3) forming an activated mayenite compound powder by heating the compound powder in an inert gas atmosphere or in a vacuum; and (4) injecting electrons into the mayenite compound through a reduction treatment by mixing the activated mayenite compound powder with a reducing agent.


Patent
Japan Science and Technology Agency | Date: 2016-11-15

This invention provides a technique enabling to detect target molecules of low concentration with high sensitivity. This invention includes (i) a step of introducing a hydrophilic solvent (42) containing beads (40),(41) into a space (30) between (a) a lower layer section (10) including a plurality of receptacles (13) each of which is capable of storing only one of the beads (41),(41) and which are separated from each other by a side wall (12) having a hydrophobic upper surface and (b) an upper layer section (20) facing a surface of the lower layer section (10) on which surface the plurality of receptacles (13) are provided; and (ii) a step of introducing a hydrophobic solvent (43) into the space (30), the step (ii) being carried out after the step (i).


Patent
Japan Science and Technology Agency | Date: 2017-05-17

As a technique for efficiently sealing many substances, such as beads, nucleic acid, protein, virus, cells, and lipid membrane complex, into an array, the present invention provides a method for sealing a substance, including: (i) a step of introducing a first solvent containing a substance on a substrate on which a plurality of receptacles capable of storing the substance are formed separated from each other by a side wall; and (ii) a step of introducing a second solvent having a greater specific gravity than that of the first solvent onto the first solvent, the step (ii) being carried out after the step (i).


Patent
Japan Science and Technology Agency | Date: 2017-05-24

It is intended to provide: a compound useful as an amyloid oxidation catalyst which is applicable in vivo and is applicable not only to A peptides but to other amyloids; and a prophylactic or therapeutic drug for an amyloid-related disease, comprising the same. The present invention provides a benzothiazole compound represented by the following formula (1) wherein X represents a halogen atom; R^(1) represents an optionally substituted hydrocarbon group; R^(2) represents a hydrogen atom or an optionally substituted hydrocarbon group; R^(3) and R^(4) are the same or different and each represent a hydrogen atom, an optionally substituted hydrocarbon group, an alkoxy group, a halogen atom, an amino group, a nitro group, or a cyano group; R^(2) and R^(4) optionally together form an alkylene group; and R^(5) represents an anion.


Patent
Japan Science, Technology Agency, Japan National Institute of Advanced Industrial Science and Technology | Date: 2017-02-09

The output voltage of an MRAM is increased by means of an Fe(001)/MgO(001)/Fe(001) MTJ device, which is formed by microfabrication of a sample prepared as follows: A single-crystalline MgO (001) substrate is prepared. An epitaxial Fe(001) lower electrode (a first electrode) is grown on a MgO(001) seed layer at room temperature, followed by annealing under ultrahigh vacuum. A MgO(001) barrier layer is epitaxially formed on the Fe(001) lower electrode (the first electrode) at room temperature, using a MgO electron-beam evaporation. A Fe(001) upper electrode (a second electrode) is then formed on the MgO(001) barrier layer at room temperature. This is successively followed by the deposition of a Co layer on the Fe(001) upper electrode (the second electrode). The Co layer is provided so as to increase the coercive force of the upper electrode in order to realize an antiparallel magnetization alignment.


Patent
Japan Science and Technology Agency | Date: 2017-05-31

A memory circuit comprising:a bistable circuit (30) configured to write data;a nonvolatile element (MTJ1, MTJ2) configured to store data written in the bistable circuit (30) in a nonvolatile manner and restore data stored in a nonvolatile manner into the bistable circuit (30) by changing a resistance value with a current flowing between one end and the other end, the nonvolatile element (MTJ1, MTJ2) having the one end connected to a node (Q, QB) in the bistable circuit (30) and the other end connected to a control line (CTRL);an FET (m7, m8) having a source and a drain connected in series to the nonvolatile element (MTJ1, MTJ2) between the node (Q, QB) and the control line (CNTL); anda control unit (85) configured to make a voltage (SR) to be applied to a gate of the FET (m7, m8) during a period to restore data stored in the nonvolatile element (MTJ1, MTJ2) in a nonvolatile manner into the bistable circuit (30) lower than a supply voltage to be applied to the bistable circuit (30) during a period to write data into and read data from the bistable circuit (30) in a volatile manner.

Loading Japan Science and Technology Agency collaborators
Loading Japan Science and Technology Agency collaborators