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Ibaraki, Japan

The National Institute of Advanced Industrial Science and Technology , or AIST, is a Japanese research facility headquartered in Tokyo, and most of the workforce is located in Tsukuba Science City, Ibaraki, and in several cities throughout Japan. The institute is managed to integrate scientific and engineering knowledge to address socio-economic needs. It became a newly designed legal body of independent administrative institution in 2001, remaining under the Ministry of Economy, Trade and Industry. Wikipedia.


Jansen R.,Japan National Institute of Advanced Industrial Science and Technology
Nature Materials | Year: 2012

Worldwide efforts are underway to integrate semiconductors and magnetic materials, aiming to create a revolutionary and energy-efficient information technology in which digital data are encoded in the spin of electrons. Implementing spin functionality in silicon, the mainstream semiconductor, is vital to establish a spin-based electronics with potential to change information technology beyond imagination. Can silicon spintronics live up to the expectation? Remarkable advances in the creation and control of spin polarization in silicon suggest so. Here, I review the key developments and achievements, and describe the building blocks of silicon spintronics. Unexpected and puzzling results are discussed, and open issues and challenges identified. More surprises lie ahead as silicon spintronics comes of age. © 2012 Macmillan Publishers Limited. All rights reserved. Source


Patent
Japan National Institute of Advanced Industrial Science, Technology and Life Robotics R.E.D Inc. | Date: 2015-08-11

A multi-joint arm mechanism includes an arm supporting member a first, second and third joints. The third joint has a linear extension and retraction axis. The third joint includes flat-shaped first structures bendably coupled to one another, second structures having a C-shaped section and bendably coupled to one another, a supporting member supporting the stiffened first and second structures, and a drive member sending and drawing the stiffened first and second structures. The first and the second structures are linearly stiffened by being in contact with each other and return to a bent state by being separated from each other. The second structures are bent toward the bottom parts and conveyed into the arm supporting member. The first structures are bent in a same direction as the second structures and conveyed into the arm supporting member. The first structures are stored in the arm supporting member along the second structures.


Patent
Zeon Corporation, Japan National Institute of Advanced Industrial Science and Technology | Date: 2015-05-06

A substrate of the present invention for producing aligned carbon nanotube aggregates on a surface thereof is a substrate for producing aligned carbon nanotube aggregates on a surface thereof, the substrate for producing aligned carbon nanotube aggregates including: a metal base substrate; and carburizing prevention layers formed on both front and back surfaces of the metal base substrate, respectively.


Patent
Japan National Institute of Advanced Industrial Science and Technology | Date: 2015-02-18

A transfer box has a sealing structure hermetically sealable by means of tight coupling of a transfer box body and a transfer box door. The transfer box is structured in such a way that magnets on the transfer box body face magnetic bodies on the transfer box door when the transfer box door is closed on the transfer box body, with these magnets and magnetic bodies forming a magnetic closed circuit.


Patent
Japan National Institute of Advanced Industrial Science, Technology and Nippon Electrical Glass Co. | Date: 2015-02-27

A negative electrode active material for an electricity storage device comprises at least SnO as a composition thereof. When a binding energy value of an electron on a Sn 3d

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