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Shanghai, China

JA Solar Holdings is the world's largest solar cell producer. They design, develop, manufacture and sell solar cell and solar module products and are based in the People’s Republic of China. The Company is also engaged in the manufacturing and sales of monocrystalline and multicrystalline solar cells. It sells its products primarily through a team of sales and marketing personnel to solar module manufacturers, who assemble and integrate its solar cells into modules and systems that convert sunlight into electricity. It also manufactures a variety of standard and specialty solar modules. JA Solar Holdings also sells its products to customers in Germany, Sweden, Spain, South Korea, and the United States. The company was founded in 2005 and is based in Ningjin, in the People’s Republic of China. In December 2009 investors began to notice the growing market share of JA Solar which was fueled by a large subsidy from the Chinese Government. Wikipedia.

Ja Solar | Date: 2012-04-18

Galvanic batteries; Integrated circuits; Optical filters; Optical sensors; Photovoltaic cells; Semi-conductors; Semiconductor devices; Silicon chips; Solar batteries.

Ja Solar | Date: 2012-07-03

Galvanic batteries; Integrated circuits; Optical filters; Optical sensors; Photovoltaic cells; Semi-conductors; Semiconductor devices; Silicon chips; Solar batteries.

Ma W.,Xian Jiaotong University | Zhong G.,Xian Jiaotong University | Zhong G.,JA SOLAR | Sun L.,Xian Jiaotong University | And 3 more authors.
Solar Energy Materials and Solar Cells | Year: 2012

An insulation partition was designed in a seeded directional solidification (DS) furnace of industrial-size to produce quasi-single crystalline silicon ingot for solar cells of high efficiency. We used a transient global model to study the effects of the insulation partition block on the temperature and thermal stress fields in the solidified silicon ingot during the solidification process. We validated the transient global model by comparing the calculations with the experimental measurements. Simulation results show that an insulation partition block can significantly reduce the total heating power consumption and influence the temperature and velocity fields in the silicon melt. We also found that the melt-crystal interface (mc interface) shape changes from concave to convex to the melt with a larger crystal growth rate with an insulation partition, while it always remains flat with a smaller crystal growth rate without a partition block. The axial temperature gradient and thermal stress in the grown silicon crystal increased with a partition block. The solar cells from the grown quasi-single crystalline silicon ingot exhibited higher short-circuit current (Isc) and open-circuit voltage (Voc). The average conversion efficiency of solar cells is increased to 17.8% and about 1.2% more than that based on mc-Si ingot from the conventional furnace. © 2012 Elsevier B.V. All rights reserved.

Yu Q.,Xian Jiaotong University | Liu L.,Xian Jiaotong University | Ma W.,Xian Jiaotong University | Zhong G.,Xian Jiaotong University | And 2 more authors.
Journal of Crystal Growth | Year: 2012

To preserve the seed crystal in the melting process and improve the thermal field in the hot-zone during the solidification process aiding the formation of a quasi-single crystalline silicon ingot, an insulation partition block was designed for use in the hot-zone of an industrial seeded directional solidification furnace. A global model taking into account thermal conduction, thermal radiation, melt convection and argon flow was established to investigate the effects of the insulation configuration design on the thermal field, solidification interface shape, melt convection, argon recirculation and power consumption. In addition to comparing insulation configuration designs with and without the partition block, we carried out a comprehensive parameter study of the local design of the hot-zone, including the position, the width and the thickness of the insulation partition block. The results show that a suitable temperature gradient and a flat or slightly convex interface during seed preservation and bulk crystal growth can be achieved to maintain the quasi-single crystal structure all the way to the top of the silicon ingot. Furthermore, the argon recirculation and energy consumption can be reduced and the melt flow motion can be controlled by good insulation partition block design. © 2012 Elsevier B.V.

Zhong G.,Xian Jiaotong University | Zhong G.,JA SOLAR | Yu Q.,Xian Jiaotong University | Huang X.,JA SOLAR | Liu L.,Xian Jiaotong University
Journal of Crystal Growth | Year: 2014

The effects of height of remaining seed, seed type, and crucible purity on the length of the low minority carrier lifetime zone (i.e., red zone) at the bottom of seed-assisted cast ingots were investigated. The red zone length at the bottom is proportional to the height of the remaining seeds. Only very little difference in the length of the bottom red zone was found in the quasi-single-crystal silicon (QSC-Si) bricks between using normal single-crystal seeds and recycled seeds, while the use of particle seeds resulted in a longer bottom red zone compared with using block seeds. Furthermore, a high-purity crucible does not result in a significant reduction in the height of bottom red zone in the QSC-Si ingot, although it results in a much shorter bottom red zone in the conventional mc-Si ingot. © 2014 Elsevier B.V.

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