Iwatani Corporation, Atec Co. and Mitsubishi Group | Date: 2014-12-17
In a gas supply device (11), a tank (21) that stores LNG (12) is provided with a supply path (13) that is used to supply vaporized gas to gas consumption equipment (13) and a reflux path (41) that is used to reflux the vaporized gas, guided out from an inner heat-blocking chamber (25), to the tank (21) ; and pressure adjustment means (42) provided in the reflux path (41) adjusts an inner pressure of the tank (21) to supply gas via the supply path (31). In the tank (21) of the gas supply device (11), the inner heat-blocking chamber (25) that is partitioned from a liquefied gas storage section (24) that stores the LNG (12) by a vacuum heat-insulating layer (22a) is provided. In the liquefied gas storage section (24), a guide-out path (26) that is used to guide the LNG into the inner heat-blocking chamber (25) is formed. An upstream part of the reflux path (41) is provided in the tank (21) . In the inner heat-blocking chamber (25), a heat exchange section (27) that uses gas as a heating medium to vaporize the LNG (12) is provided. A liquid phase part is accommodated in the tank (21).
Iwatani Corporation and SofSera Corporation | Date: 2012-03-07
[Problem] Provided is a means for fixing calcium phosphate onto the surface of a metal by a treatment method which uses no acid and produces less residue. [Means for solving] A method of producing a calcium phosphate composite in which calcium phosphate is bonded to the surface of a base material, the method including:a surface treatment step of bringing the surface of the base material into contact with a surface treating agent, and then into contact with a silane coupling agent, to surface treat the base material;a polymerization step of initiating, after the surface treatment step, polymerization of the silane coupling agent by means of a polymerization initiator; anda bonding step of bonding the silane coupling agent at the surface of the base material after the polymerization step, with calcium phosphate;wherein the base material is a metal, andthe surface treating agent is ozone water.
Iwatani Corporation and Tokyo Electron | Date: 2012-08-24
A resist removal apparatus and method are effective in removing a resist without oxidizing the substrate material other than the resist. The resist removal apparatus, which removes resist from a wafer on which a resist film has been formed, includes a cluster spraying unit which sprays a wafer with clusters each of which is formed of a plurality of organic solvent molecules agglomerated together.
Tokyo Electron and Iwatani Corporation | Date: 2015-04-28
A film forming method for obtaining a thin film by laminating molecular layers of oxide on a surface of a substrate in a vacuum atmosphere includes performing a cycle a plurality of times. The cycle includes: supplying a source gas containing a source to the substrate in a vacuum vessel to adsorb the source onto the substrate; forming an ozone atmosphere containing ozone having a concentration not less than that where a chain decomposition reaction is caused in the vacuum vessel; and forcibly decomposing the ozone by supplying energy to the ozone atmosphere to generate active species of oxygen, and oxidizing the source adsorbed onto the surface of the substrate by the active species to obtain the oxide.
Asahi Seisakusho Co. and Iwatani Corporation | Date: 2014-04-24
A structure which performs safety operation with certainty when a gas container is replaced or when an abnormality occurs and is easy to used is provided. A cartridge-type gas grill 11 having a plurality of systems includes two gas container accommodation sections 12; two burners 13; and gas flow paths for connecting the gas container accommodation sections 12 and the burners 13 in a one-to-one relationship. All the gas container accommodation sections 12 are each provided with a container attachment switch 19 for detecting that a gas container 15 is connected. Open/close valves 18, provided in the gas flow paths, for adjusting a gas flow are each formed of an electromagnetic valve. Operation knobs 63 each for making an operation on the corresponding open/close valve 18 are each provided with an ignition switch 20, which is turned ON when the corresponding open/close valve 18 is opened and is turned OFF when the corresponding open/close valve 18 is closed. The container attachment switches 19, the open/close valves 18, and the ignition switches 20 are electronically controlled. For an ignition process, the ignition switches are validated under the condition that all the container attachment switches 19 are ON. For a recovery process, all the ignition switches 19 need to be turned OFF.
Disco Corporation and Iwatani Corporation | Date: 2014-08-07
A dividing method for a wafer includes a step of irradiating a laser beam along streets to form modified regions in an inside of a wafer, a step of dividing the wafer into individual chips beginning with starting points given by the modified regions, a step of placing a processing chamber in which the wafer is charged to a vacuum state and fill the processing chamber with inert gas, and a step of introducing etching gas into the processing chamber filled with the inert gas to etch side faces of the chips.
Iwatani Corporation | Date: 2014-01-15
Combustible gas, which is easy to be stored, transported and the like and can contribute to improving the quality of a finished state of an operation such as gas cutting, gas welding or brazing, contains ethylene at 38 v/v% or more and 45 v/v% or less and the remainder being hydrogen and unavoidable impurity.
Kyoto University and Iwatani Corporation | Date: 2013-02-27
A processing method having excellent processing performance at a low flow rate is provided. A method for processing a surface of a sample uses reactive clusters produced by adiabatic expansion of a gas mixture ejected from a nozzle into a vacuum processing chamber. The gas mixture contains a reactive gas chlorine trifluoride, a first inert gas argon, and a second inert gas xenon. The gas mixture in an inlet of the nozzle has a pressure of 0.4 MPa (abs) or more. The reactive gas constitutes 3% by volume or more and 10% by volume or less. The first inert gas constitutes 40% by volume or more and 94% by volume or less. The second inert gas constitutes 3% by volume or more and 50% by volume or less of the gas mixture.
Iwatani Corporation and Central Glass Company | Date: 2014-10-10
A method and apparatus, for supplying high-pressure mixed gas of a low-vapor-pressure first gas as an active gas and a high-vapor-pressure second gas, are arranged to reduce an amount of the first gas discarded. The mixed gas in a high-pressure state is supplied from a mixing container to a use point. Upon reduction of pressure in the mixing container to a setpoint as a result of supply to the use point, a predetermined amount of the first gas is charged into a replenishment container connected to the mixing container by a replenishment line having a replenishment valve, and which is evacuated. As the second gas is charged into the replenishment container charged with the first gas, the replenishment valve is opened such that the first gas in the replenishment container is forced out by the second gas, thereby charging the mixing container with the mixed gas in the high-pressure condition.
Toyota Motor Corporation and Iwatani Corporation | Date: 2015-07-01
A suction method that sucks inside of a filling nozzle used for supply of hydrogen by using a suction nozzle that is engaged with the filling nozzle, the suction method comprising: evacuating a vacuum chamber by using a vacuum pump; and sucking inside of the suction nozzle by using the evacuated vacuum chamber.