ITC UralAlmazInvest

Moscow, Russia

ITC UralAlmazInvest

Moscow, Russia
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Muchnikov A.B.,RAS Institute of Applied Physics | Radishev D.B.,RAS Institute of Applied Physics | Vikharev A.L.,RAS Institute of Applied Physics | Gorbachev A.M.,RAS Institute of Applied Physics | And 4 more authors.
Journal of Crystal Growth | Year: 2016

Detailed description of a way to accrete diamond single crystals in one plate using the CVD method is presented. It was found that each region of the mosaic CVD diamond crystal grown over a certain seed substrate "inherits" the crystallographic orientation of its substrate. No correlation was found between the value of misorientation of the accreted crystals and entrance of hydrogen to the boundary. It is shown that successful accretion of single crystal diamond plates in a single mosaic crystal occurs even in the case of great misorientation of crystals. The mechanical stresses appear during the fabrication of the mosaic CVD diamond crystal. Stresses accumulate during accretion of the regions, which grow over substrates with different orientations, in a common structure. © 2016 Elsevier B.V. All rights reserved.


Altukhov A.A.,ITC UralAlmazInvest | Vikharev A.L.,RAS Institute of Applied Physics | Gorbachev A.M.,RAS Institute of Applied Physics | Dukhnovsky M.P.,Federal State Unitary Enterprise | And 7 more authors.
Semiconductors | Year: 2011

The results of studies of single-crystal diamond layers with orientation (100) grown on substrates of IIa-type natural diamond by chemical-vapor deposition and of semiconductor diamond obtained subsequently by doping by implantation of boron ions are reported. Optimal conditions of postimplantation annealing of diamond that provide the hole mobility of 1150 cm2 V-1 s-1 (the highest mobility obtained so far for semiconductor diamond after ion implantation) are given. © 2011 Pleiades Publishing, Ltd.


Ratnikova A.K.,Federal State Unitary Enterprise | Dukhnovsky M.P.,Federal State Unitary Enterprise | Fedorov Y.Y.,Federal State Unitary Enterprise | Zemlyakov V.E.,Federal State Unitary Enterprise | And 6 more authors.
Diamond and Related Materials | Year: 2011

The homoepitaxial single crystal diamond growth by microwave plasma assisted CVD at high microwave power density 200 W/cm3 in a 2.45 GHz MPACVD reactor using natural diamond seeds (type IIa) was investigated. The semiconductor CVD diamond of p-type was obtained by doping technique of ion implantation. Boron ions were implanted at the acceleration energy of 80 keV with two cases of dose: 5 • 1014 and 3 • 1015 cm- 2. To recover the damage layer and activate dopants in CVD diamond the rapid annealing at nitrogen atmosphere at 1380° C was used. B-implanted diamond layer showing the mobility of 1150 cm2/V s at 300 K which is the highest for ion-implanted diamond was obtained. © 2011 Elsevier B.V. All rights reserved.

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