Italian Universities NanoElectronics Team

Bologna, Italy

Italian Universities NanoElectronics Team

Bologna, Italy
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Massenz A.,University of Padua | Barbato M.,University of Padua | Giliberto V.,University of Padua | Margesin B.,Fondazione Bruno Kessler | And 3 more authors.
Microelectronics Reliability | Year: 2011

We propose and discuss a detailed reliability investigation of ohmic RF-MEMS switches, affected by high charge trapping phenomena, and we analyse how these test methods affect the study of charge trapping issues. We investigate the effect of three different parameters that have to be considered when cycling ohmic RF-MEMS switches. In particular the effect of the shape of the actuation pulse, the cycling frequency and the RF input power are analysed. Our experimental investigations show interesting trends and results that might help the analysis of ohmic RF-MEMS switches during cycling tests. These approaches, in fact, suggest how to better control and to reduce the charge trapping effect maximizing the lifetime of RF-MEMS switches. © 2011 Elsevier Ltd. All rights reserved.


Tazzoli A.,University of Padua | Tazzoli A.,University of Pennsylvania | Rossetto I.,University of Padua | Zanoni E.,University of Padua | And 5 more authors.
Microelectronics Reliability | Year: 2011

The EOS/ESD sensitivity of the main circuit blocks of a complete GaAs multi-stage power amplifier for microwave applications was investigated under HBM, MM and TLP regimes. Hard breakdown failure modes were identified due to passive components failure. The high current injection state of active components was also analyzed. © 2011 Elsevier Ltd. All rights reserved.


De Pasquale G.,Polytechnic University of Turin | Barbato M.,University of Padua | Giliberto V.,University of Padua | Meneghesso G.,University of Padua | And 2 more authors.
Microelectronics Reliability | Year: 2012

The contact problem in microstructures with electrostatic actuation is the topic of this study. High impact velocity between the electrodes is responsible for surfaces damaging and initiation of failure mechanisms. An open-loop strategy to reduce the impact velocity by modifying the shape of actuation force is presented and validated by experimental measurements in the time domain. An analytic estimation of the velocity is also provided, according to the conservation of energy. © 2012 Elsevier Ltd. All rights reserved.


Balatti S.,Italian Universities Nanoelectronics Team | Ambrogio S.,Italian Universities Nanoelectronics Team | Ielmini D.,Italian Universities Nanoelectronics Team
IEEE Transactions on Electron Devices | Year: 2015

To extend the scaling of digital integrated circuits, beyond-CMOS approaches based on advanced materials and novel switching concepts are strongly needed. Among these approaches, the resistive switching random access memory (RRAM) allows for fast and nonvolatile switching at scalable power consumption. This work presents functionally complete logic gates based on RRAM technology. Logic computation is obtained through conditional switching in RRAM circuits with serially connected switches. AND, implication, NOT, and bit transfer operations are demonstrated, each using a single clock pulse, while other functions (e.g., OR and XOR) are achieved in multiple steps. The results support RRAM logic for normally-off digital circuits with extremely high density. © 2015 IEEE.


Tazzoli A.,University of Padua | Tazzoli A.,University of Pennsylvania | Iannacci J.,Fondazione Bruno Kessler | Meneghesso G.,University of Padua | Meneghesso G.,Italian Universities NanoElectronics Team
Electrical Overstress/Electrostatic Discharge Symposium Proceedings | Year: 2011

The adoption of ESD events to systematically induce micro-welding formation on ohmic RF-MEMS switches is proposed. The established procedure for accelerated testing was verified with success on electrostatically actuated micro-machined switches having different topologies, and it was used to assess the efficiency of a heat-based active restoring mechanism. © 2011 ESD Association.

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