Ōsaka, Japan
Ōsaka, Japan

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Yamada I.,University of Shiga Prefecture | Yamashita N.,Isuzu Glass Co. | Tani K.,Isuzu Glass Co. | Einishi T.,Isuzu Glass Co. | And 3 more authors.
Optics Letters | Year: 2011

A mid-IR wire-grid polarizer with a 500nm pitch was fabricated on a low toxic chalcogenide glass (Sb-Ge-Sn-S system) by the thermal imprinting of periodic grating followed by the thermal evaporation of Al metal. After imprinting, deposition of Al on the grating at an oblique angle produced a wire-grid polarizer. The fabricated polarizer showed polarization with TM transmittance greater than 60% at 5-9 ?m wavelengths and an extinction ratio greater than 20 dB at 3:5-11 ?m wavelengths. This polarizer with a high extinction ratio can be fabricated more simply and less expensively than conventional IR polarizers. © 2011 Optical Society of America.


Yamada I.,University of Shiga Prefecture | Yamashita N.,Isuzu Glass Co. | Tani K.,Isuzu Glass Co. | Einishi T.,Isuzu Glass Co. | And 3 more authors.
Applied Physics Express | Year: 2012

We fabricated infrared wire-grid polarizers with an antireflection (AR) grating structure by the simultaneous imprinting on both sides of a lowtoxicity chalcogenide glass (Sb-Ge-Sn-S system). Silicon carbide and glassy carbon plates were used as molds for the direct glass imprinting. A wire-grid polarizer of 100-nm-thick was produced by depositing Al obliquely on the grating. Although the transmittance of the chalcogenide glass substrate was 62-66% in the 8.5-10.5 μm wavelength range, the transverse magnetic (TM) transmittance of the fabricated element became higher than 70% owing to the AR structure. The extinction ratio was larger than 20 dB at 11 μm wavelength. © 2012 The Japan Society of Applied Physics.


Yamada I.,University of Shiga Prefecture | Yamashita N.,Isuzu Glass Co. | Tani K.,Isuzu Glass Co. | Einishi T.,Isuzu Glass Co. | And 3 more authors.
Applied Physics Express | Year: 2012

An achromatic infrared wave plate was fabricated by forming a subwavelength grating on the chalcogenide glass using direct imprint lithography. A low toxic chalcogenide glass (Sb-Ge-Sn-S system) substrate was imprinted with a grating of 1.63-μm depth, a fill factor of 0.7, and 3-μm period using glassy carbon as a mold at 253 °C and 3.8 MPa. Phase retardation of the element reached around 30° at 8.5-10.5 μm wavelengths, and the transmittance exceeded that of a flat substrate over 8 μm wavelength. Fabrication of the mid-infrared wave plate is thereby less expensive than that of conventional crystalline wave plates. © 2012 The Japan Society of Applied Physics.


Yamada I.,University of Shiga Prefecture | Yamashita N.,Isuzu Glass Co. | Einishi T.,Isuzu Glass Co. | Saito M.,Ryukoku University | And 2 more authors.
Infrared Physics and Technology | Year: 2014

An infrared wire-grid polarizer with an antireflection (AR) grating structure was fabricated using direct imprint lithography on both sides of a low toxicity chalcogenide glass (Sb-Ge-Sn-S system) simultaneously. The AR grating structure was designed using rigorous coupled-wave analysis theory. Silicon carbide with a grating period of 500 nm and glassy carbon with a grating period of 3 μm were employed as molds. After imprinting, a wire-grid polarizer was made by depositing Al obliquely on the grating. The transverse magnetic (TM) transmittance of the fabricated polarizer was over 70% at 8.5-10.5 μm wavelength, although the transmittance of the glass substrate is 62-66%, and the extinction ratio was over 20 dB at 11 μm wavelength. The polarizer has a high TM transmittance and is cheaper and simpler to fabricate as compared with conventional infrared polarizers. © 2014 Elsevier B.V. All rights reserved.


Patent
Isuzu Glass Co. | Date: 2010-09-08

The purpose of the present invention is to use chalcogenide glass to produce an infrared transmitting glass that is more suitable for mold-forming than the conventional glasses. Specifically, the invention provides an infrared transmitting glass for mold forming which contains, in molar concentrations, 2-22% of Ge, 6-34% of at least one element selected from the group consisting of Sb and Bi, 1-20% of at least one element selected from the group consisting of Sn and Zn and 58-70% of at least one element chosen from the group comprising S, Se and Te.


Patent
Japan National Institute of Advanced Industrial Science, Technology and Isuzu Glass Co. | Date: 2016-02-17

[Problem] To provide a lithium secondary battery negative electrode active material consisting of a Sn-Sb based sulfide that delivers a high electrode capacity density, excellent output characteristics, and excellent cycle life characteristics and also provide a method for manufacturing the lithium secondary battery negative electrode active material, said method being capable of easily manufacturing the high performance lithium secondary battery negative electrode active material at low cost without requiring a high-temperature processing step and special facilities as required in a glass melting method. [Solution] A method for manufacturing a lithium secondary battery negative electrode active material containing a Sn-Sb based sulfide comprises a step of obtaining a Sn-Sb based sulfide precipitate by adding an alkali metal sulfide to a mixed solution of a tin halide and an antimony halide.


[Object] The object is to provide a negative electrode material for a lithium secondary battery, wherein a sulfide-based negative electrode with water-resistant properties can exert excellent cycle characteristics and high output performance while maintaining a high discharge capacity and there is no precipitation of lithium dendrites during charge at low temperature. [Means for Solving Problems] A negative electrode material for a lithium secondary battery comprising sulfur and sulfide glass including the following components (i) and (ii): (i) at least one or more elements selected from a group consisting of Sb, As, Bi, Ge, Si, Cu, Zn, Pd, In and Zr; and (ii) at least one or more elements selected from a group consisting of Se, Te, Ga, Sn, Pb, Cd, Al, Fe, Mg, Ca, Co, Ag, Sr, P and Ba,


Patent
Japan National Institute of Advanced Industrial Science, Technology and Isuzu Glass Co. | Date: 2014-09-24

[Problem] Provided is a negative electrode material for a sodium secondary battery and its manufacturing method, and a negative electrode for a sodium secondary battery, and a sodium secondary battery, wherein the negative electrode material can have excellent cycle characteristics while maintaining high discharge capacity. [Solution] A negative electrode material for a sodium secondary battery according to the present invention includes sulfide or sulfide composite body containing sulfur and antimony, and as necessary further includes the following component(s) of (i): (i) at least one or more element(s) selected from a group consisting of Sn, As, Bi, Ge, Ga, Pb, and C, wherein when a component(s) of (i) is included, the ratio of each of the above described components is sulfide: 10 to 70 mol %, antimony: 10 to 70 mol %, and (i): 3 to 60 mol %.


[Object] The object is to provide a negative electrode material for a lithium secondary battery, wherein a sulfide-based negative electrode with water-resistant properties can exert excellent cycle characteristics and high output performance while maintaining a high discharge capacity and there is no precipitation of lithium dendrites during charge at low temperature. [Means for Solving Problems] A negative electrode material for a lithium secondary battery comprising sulfur and sulfide glass including the following components ( i ) and ( ii ):( i ) at least one or more elements selected from a group consisting of Sb, As, Bi, Ge, Si, Cu, Zn, Pd, In and Zr; and( ii ) at least one or more elements selected from a group consisting of Se, Te, Ga, Sn, Pb, Cd, Al, Fe, Mg, Ca, Co, Ag, Sr, P and Ba,wherein the ratio of the above components is sulfur: 40-80 mol %, ( i ): 1-50 mol % and ( ii ): 1-50 mol %, respectively.


Patent
Japan National Institute of Advanced Industrial Science, Technology and Isuzu Glass Ltd. | Date: 2014-02-26

Problem: To provide a lithium secondary battery negative electrode active material consisting of a SnSb based sulfide that delivers a high electrode capacity density, excellent output characteristics, and excellent cycle life characteristics and also provide a method for manufacturing the lithium secondary battery negative electrode active material, said method being capable of easily manufacturing the high performance lithium secondary battery negative electrode active material at low cost without requiring a high-temperature processing step and special facilities as required in a glass melting method. Solution: A method for manufacturing a lithium secondary battery negative electrode active material containing a SnSb based sulfide comprises a step of obtaining a SnSb based sulfide precipitate by adding an alkali metal sulfide to a mixed solution of a tin halide and an antimony halide.

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