Tikhomirov V.G.,Saint Petersburg State University |
Maleev N.A.,RAS Ioffe Physical - Technical Institute |
Kuzmenkov A.G.,RAS Ioffe Physical - Technical Institute |
Solov'ev Y.V.,Russian Academy of Sciences |
And 7 more authors.
Semiconductors | Year: 2011
The results of numerical simulation and experimental study of the effect of the gate region parameters on static characteristics of microwave field-effect transistors based on pseudomorphic AlGaAs-InGaAs-GaAs heterostructures (p-HEMT) are considered. The possibility of correct simulation of static characteristics of actual device structures of p-HEMT transistors using the TCAD software package (SILVACO Inc.) is demonstrated. The essential necessity of using selective gate-groove etching to achieve controllable and reproducible device parameters is shown. © 2011 Pleiades Publishing, Ltd. Source
Vikharev A.L.,RAS Institute of Applied Physics |
Gorbachev A.M.,RAS Institute of Applied Physics |
Dukhnovsky M.P.,Istok Scientific and Industrial Enterprise |
Muchnikov A.B.,RAS Institute of Applied Physics |
And 2 more authors.
Semiconductors | Year: 2012
The fabrication of diamond substrates in which single-crystalline and polycrystalline CVD diamond form a single wafer, and the epitaxial growth of diamond films on such combined substrates containing polycrystalline and (100) single-crystalline CVD diamond regions are studied. © 2012 Pleiades Publishing, Ltd. Source