Istok Scientific and Industrial Enterprise

Moscow oblast, Russia

Istok Scientific and Industrial Enterprise

Moscow oblast, Russia
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Tikhomirov V.G.,Saint Petersburg State University | Maleev N.A.,RAS Ioffe Physical - Technical Institute | Kuzmenkov A.G.,RAS Ioffe Physical - Technical Institute | Solov'ev Y.V.,Russian Academy of Sciences | And 7 more authors.
Semiconductors | Year: 2011

The results of numerical simulation and experimental study of the effect of the gate region parameters on static characteristics of microwave field-effect transistors based on pseudomorphic AlGaAs-InGaAs-GaAs heterostructures (p-HEMT) are considered. The possibility of correct simulation of static characteristics of actual device structures of p-HEMT transistors using the TCAD software package (SILVACO Inc.) is demonstrated. The essential necessity of using selective gate-groove etching to achieve controllable and reproducible device parameters is shown. © 2011 Pleiades Publishing, Ltd.


Vikharev A.L.,RAS Institute of Applied Physics | Gorbachev A.M.,RAS Institute of Applied Physics | Dukhnovsky M.P.,Istok Scientific and Industrial Enterprise | Muchnikov A.B.,RAS Institute of Applied Physics | And 2 more authors.
Semiconductors | Year: 2012

The fabrication of diamond substrates in which single-crystalline and polycrystalline CVD diamond form a single wafer, and the epitaxial growth of diamond films on such combined substrates containing polycrystalline and (100) single-crystalline CVD diamond regions are studied. © 2012 Pleiades Publishing, Ltd.

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