ISEL ADEETC

Lisbon, Portugal

ISEL ADEETC

Lisbon, Portugal

Time filter

Source Type

Pato M.,ISEL ADEETC | Datia N.,ISEL ADEETC
SEFI Annual Conference 2011 | Year: 2011

This work presents an implementation plan for an approach of problem-based learning (PBL). The study is reported a panel data supported by one core engineering course and another one in computer science, in the same departmental area. In our opinion, the PBL is especially "adequate" to be used in computer science, as it seems a viable solution to overcome the learning problems and dropout rates on some courses. The results presented show evidence of it and point out some issues that difficult the implementation of this learning environment. This leads to a discussion of whether the PBL experiments should be carried out as isolated efforts by the teachers, or instead, if we should take a broad engagement to deliver a wide PBL learning environment. Copyright © 2015 SEFI.


Ramalho A.,ISEL ADESPA | Sousa J.A.M.,ISEL ADESPA | Trigo P.,ISEL ADEETC
International Conference on the European Energy Market, EEM | Year: 2014

This paper presents a methodology to establish investment and trading strategies of a power generation company. These strategies are integrated in the ITEM-Game simulator in order to test their results when played against defined strategies used by other players. The developed strategies are focused on investment decisions, although trading strategies are also implemented to obtain base case results. Two cases are studied considering three players with the same trading strategy. In case 1, all players also have the same investment strategy driven by a market target share. In case 2, player 1 has an improved investment strategy with a target share twice of the target of players 2 and 3. Results put in evidence the influence of the CO2 and fuel prices in the company investment decision. It is also observed the influence of the budget constraint which might prevent the player to take the desired investment decision. © 2014 IEEE.


Fantoni A.,ISEL ADEETC | Fernandes M.,ISEL ADEETC | Louro P.,ISEL ADEETC | Vieira M.A.,ISEL ADEETC | Vieira M.,ISEL ADEETC
Microelectronic Engineering | Year: 2013

The application of a-SiC:H/a-Si:H pinpin photodiodes for optoelectronic applications as a WDM demultiplexer device has been demonstrated useful in optical communications that use the WDM technique to encode multiple signals in the visible light range. This is required in short range optical communication applications, where for costs reasons the link is provided by Plastic Optical Fibers. Characterization of these devices has shown the presence of large photocapacitive effects. By superimposing background illumination to the pulsed channel the device behaves as a filter, producing signal attenuation, or as an amplifier, producing signal gain, depending on the channel/background wavelength combination. We present here results, obtained by numerical simulations, about the internal electric configuration of a-SiC:H/a-Si:H pinpin photodiode. These results address the explanation of the device functioning in the frequency domain to a wavelength tunable photo-capacitance due to the accumulation of space charge localized at the bottom diode that, according to the Shockley-Read-Hall model, it is mainly due to defect trapping. Experimental result about measurement of the photodiode capacitance under different conditions of illumination and applied bias will be also presented. The combination of these analyses permits the description of a wavelength controlled photo-capacitance that combined with the series and parallel resistance of the diodes may result in the explicit definition of cut off frequencies for frequency capacitive filters activated by the light background or an oscillatory resonance of photogenerated carriers between the two diodes. © 2013 Elsevier B.V. All rights reserved.


Fantoni A.,ISEL ADEETC | Fernandes M.,ISEL ADEETC | Louro P.,ISEL ADEETC | Vieira M.,ISEL ADEETC
Proceedings of SPIE - The International Society for Optical Engineering | Year: 2016

The device under study is an a-SiC:H/a-Si:H pinpin photodiodes produced by PECVD (Plasma Enhanced Chemical Vapour Deposition) and has a structure that consists of a p-i'(a-SiC:H)-n/p-i(a-Si:H)-n heterostructure with low conductivity doped layers. This device structure has been demonstrated useful in optical communications that use the WDM technique to encode multiple signals in the visible light range. We present in this work experimental results about C-V measurements of the device under complex conditions of illumination. Also it is presented an analysis based on the transient response of the device when illuminated by a pulsed light, with and without optical bias superposition. Rising and decaying times of the collected photocurrent will be outlined under the different conditions. A simulation study outlines the role played by each pin substructure on the response speed and gives some hint on the possible optimization of this device. © 2016 SPIE.


Fantoni A.,ISEL ADEETC | Fernandes M.,ISEL ADEETC | Vygranenko Y.,ISEL ADEETC | Louro P.,ISEL ADEETC | Vieira M.,ISEL ADEETC
Physica Status Solidi (C) Current Topics in Solid State Physics | Year: 2015

We present results, obtained by means of an analytic study and a numerical simulation, about the resonant condition necessary to produce a Localized Surface Plasmonic Resonance (LSPR) effect at the surface of metal nanospheres embedded in an amorphous silicon matrix. The study is based on a Lorentz dispersive model for a-Si:H permittivity and a Drude model for the metals. Considering the absorption spectra of a-Si:H, the best choice for the metal nanoparticles appears to be aluminium, indium or magnesium. No difference has been observed when considering a-SiC:H. Finite-difference time-domain (FDTD) simulation of an Al nanosphere embedded into an amorphous silicon matrix shows an increased scattering radius and the presence of LSPR induced by the metal/semiconductor interaction under green light (560 nm) illumination. Further results include the effect of the nanoparticles shape (nano-ellipsoids) in controlling the wavelength suitable to produce LSPR. It has been shown that is possible to produce LSPR in the red part of the visible spectrum (the most critical for a-Si:H solar cells applications in terms of light absorption enhancement) with aluminium nano-ellipsoids. As an additional results we may conclude that the double Lorentz-Lorenz model for the optical functions of a-Si:H is numerically stable in 3D simulations and can be used safely in the FDTD algorithm. A further simulation study is directed to determine an optimal spatial distribution of Al nanoparticles, with variable shapes, capable to enhance light absorption in the red part of the visible spectrum, exploiting light trapping and plasmonic effects. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.


Fantoni A.,ISEL ADEETC | Louro P.,ISEL ADEETC | Vieira M.A.,ISEL ADEETC | Silva T.,ISEL ADEETC | Vieira M.,ISEL ADEETC
Sensors and Actuators, A: Physical | Year: 2012

In this paper we present results about the functioning of a multilayered a-SiC:H heterostructure as a device for wavelength-division demultiplexing of optical signals. The device is composed of two stacked p-i-n photodiodes, both optimized for the selective collection of photogenerated carriers. Band gap engineering was used to adjust the photogeneration and recombination rates profiles of the intrinsic absorber regions of each photodiode to short and long wavelength absorption and carrier collection in the visible spectrum. The photocurrent signal using different input optical channels was analyzed at reverse and forward bias and under steady state illumination. This photocurrent is used as an input for a demux algorithm based on the voltage controlled sensitivity of the device. The device functioning is explained with results obtained by numerical simulation of the device, which permit an insight to the internal electric configuration of the double heterojunction. These results address the explanation of the device functioning in the frequency domain to a wavelength tunable photocapacitance due to the accumulation of space charge localized at the internal junction. The existence of a direct relation between the experimentally observed capacitive effects of the double diode and the quality of the semiconductor materials used to form the internal junction is highlighted. © 2011 Elsevier B.V. All rights reserved.

Loading ISEL ADEETC collaborators
Loading ISEL ADEETC collaborators