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Altamura G.,Institute Photovoltaique Dile Of France Ipvf | Vidal J.,Electricite de France
Chemistry of Materials | Year: 2016

Cu2ZnSn(S1-xSex)4 (CZTSSe) alloys are promising candidates for low-cost and high-efficiency thin-film solar cells. Compared to CdTe and Cu(InxGa1-x)Se2, CZTSSe uses chemicals found more abundantly on earth. This key aspect as well as its optical properties - band gap range of 1.0-1.5 eV and absorption coefficient larger than 104 cm-1 - makes CZTSSe a feasible option for photovoltaic thin-film technologies scalable to TW/year. The key limitation to high efficiency in this technology remains a deficit in the open-circuit voltage with respect to the band gap: many groups have linked this drawback of CZTSSe solar cells to the presence of minor phases. This review aims to summarize what is known about CZTSSe minor phases and their impact on device characteristics. © 2016 American Chemical Society. Source

Lebreton F.,Ecole Polytechnique - Palaiseau | Lebreton F.,Total S.A. | Lebreton F.,Institute Photovoltaique Dile Of France Ipvf | Abolmasov S.N.,Ecole Polytechnique - Palaiseau | And 5 more authors.
Applied Physics Letters | Year: 2016

In situ photoluminescence combined with optical emission spectroscopy, effective carrier lifetime, radio-frequency (RF) and self-bias potential measurements has been used to study plasma-induced damage at the a-Si:H/c-Si interface. Passivated crystalline silicon wafers were exposed to Ar, H2, and Ar-H2 RF plasmas using the same value of RF power and pressure in the range of 80-100 mTorr. The substrate temperature during the plasma exposure was room temperature or 200 °C. It is found that Ar-H2 plasma has the most detrimental effect on the photoluminescence intensity/effective carrier lifetime which correlates well with its UV spectrum. After plasma exposure, surface passivation can be recovered by thermal annealing - an effect similar to that observed in the case of light-induced degradation of a-Si:H. © 2016 AIP Publishing LLC. Source

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