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Caen, France

Jacquinot H.,CEA Grenoble | Denis D.,IPDIA Inc
Proceedings - Electronic Components and Technology Conference | Year: 2013

Integrated trench high density MIS (Metal Insulator Semiconductor) capacitors in Si-interposer are of great interest as they provide decoupling in a smart way using the third dimension of the silicon substrate. However, the use of various highly integrated passive components on the same Si-interposer is challenging regarding wide frequency band performances and signal integrity. Both aspects are addressed in this paper based on 300 kHz-20 GHz vector network analyzer measurements on 3D 80 nF/mm2 decoupling capacitors produced by IPDIA on a high resistivity substrate. Firstly, a scalable 1 MHz-10 GHz wideband model of a 3D capacitor in the 100 pF-10 nF range is developed. Secondly, 3D electromagnetic simulations of substrate and capacitive coupling between 3D capacitors using guard ring are presented. All simulations show good agreement with measurements. To the best of our knowledge, this is the first time that a wideband mathematical model as well as an RF crosstalk study have been published on embedded trench decoupling capacitors. © 2013 IEEE. Source

Neveu F.,University of Lyon | Allard B.,University of Lyon | Martin C.,University of Lyon | Bevilacqua P.,University of Lyon | Voiron F.,IPDIA Inc
IEEE Transactions on Power Electronics | Year: 2016

High-switching frequency dc-dc converters are present in many applications, where wide regulation bandwidth and high efficiency are needed. A three-MOSFET cascode bridge is presented to get full benefit from digital CMOS technology advancements. Three-dimensional assembly with a capacitive interposer is proposed for high-frequency efficient decoupling. A test-chip is designed in 40-nm CMOS technology, validating the operation and the efficiency performance of the converter using the proposed cascode bridge. A conversion peak efficiency of 91.5% is demonstrated when converting 3.3 to 2.4 V with a 150-mA load current, while switching at 100 MHz. © 1986-2012 IEEE. Source

IPDIA Inc | Date: 2012-03-20

Apparatus and instruments for conducting, switching, transforming, accumulating, regulating or controlling electricity, namely, electric accumulators, electric coils, electric terminals, printed circuits, integrated circuits, devices for connecting, namely, electrical connectors for electronic circuits, electrical and electronic connectors, electronic chips for the manufacturer of integrated circuits, diodes, transistors, resistors, semi-conductors and capacitators, electric transformers; built-in electronic devices, namely, integrated circuit modules, system in package, also known as system-in-a-package (SIP) or Chip Stack multi-chip module (MCM), interposers for semiconductors, namely, connector for semi-conductors; electronic apparatus entirely consisting of passive components, namely, networks of constituent components of resistors, condensers (capacitors), inductor coils and diodes for radio frequency filtering, ESD protection, EMI protection, filtering of supply; parts of electronic components in silicon for the assembly of electronic components, namely, integrated circuit modules, system in package also known as system-in-a-package (SIP) or Chip Stack multi-chip module (MCM), interposers for semi-conductors, namely connectors for semi-conductors, passive components linked to integrated circuits in the nature of integrated circuits (Ics), transistors, diodes, electric resistors, capacitors and electrical inductors, analog and digital sensors, tachometers, electric actuators, electric relays; Silicon wafers; apparatus for recording, transmission, reproduction or processing of sound and images, namely, cameras, video recorders; optical and magnetic data media, namely, blank magnetic data carriers, blank optical discs, recording discs, namely, blank computer discs, blank record discs, blank floppy computer discs; data processing equipment and computers, namely, microprocessors, processors in the nature of central processing units; computer software, namely, recorded computer software programs for developing, programming, monitoring, encoding, scanning, reading and interpreting electronic chips and electronic components; detectors, namely, motion detectors, fire and smoke detector, filing level detectors; diagnostic apparatus, not for medical purposes, namely, diagnostic apparatus for testing gas, liquids and solids, apparatus for testing food, diagnostic apparatus for the detection of pathogens for laboratory or research use; blank integrated circuit cards. Evaluations, assessments and research in the fields of science and technology provided by engineers, namely, engineering services, namely, research in the area of semiconductor processing technology; technical project studies, namely, conducting of feasibility studies; design, namely, developing, installation, maintenance, updating or rental of computer software for developing, programming, monitoring, encoding, scanning, reading and interpreting electronic chips and components, namely, test prober; conversion of data and computer programs, other than physical conversion; conversion of data or documents from physical to electronic media, namely, transfer of data or documents from physical to electronic media; all the above services provided in the fields of electronics and nanotechnologies.

IPDIA Inc | Date: 2012-12-06

An interposer device The invention relates to an interposer device comprising a doped silicon substrate (

Bunel C.,IPDIA Inc | Murray F.,IPDIA Inc
CARTS International 2014 | Year: 2014

The 3D Silicon technology of IPDiA is a disruptive capacitor and passive component technology for miniaturization adopted by the key players in the Medical domain for its very low leakage current, high stability and high reliability. It is also adopted by the Industrial market for its outstanding performance and reliability demonstrated in high temperature environment, up to 300°C. The high density Silicon capacitors with multiple metal-insulator-metal (MIM) layer stacks in 3D structures are reaching today 250nF/mm2 in mass production and have been demonstrating densities of up to 1μF/mm2, confirming the target of more than 4μF/mm2 in the coming years. In this paper, the robustness of the IPDiA technology will be exposed, illustrated by reliability results obtained through innovative platforms and packaging configurations used in various fields like implantable medical devices, automotive electronics and down hole drilling equipment. © 2014 CARTS International. Source

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