Munster, Germany
Munster, Germany

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Grant
Agency: European Commission | Branch: FP7 | Program: CP-TP | Phase: NMP-2007-1.2-2 | Award Amount: 5.28M | Year: 2008

The objective of this project is to develop an innovative and novel combination of a new TOF-SIMS with substantially improved lateral resolution and sensitivity, combined with a new metrological high resolution SFM. The two techniques provide complementary information on nanoscale surface chemistry and surface morphology. In combination with a layer by layer removal of material using low energy sputtering, quantitatively measured by SFM, this combined ultra-high vacuum (UHV) instrument will be unique for the 3-dimensional chemical characterisation of nanostructured inorganic as well as organic materials with down to at least 10 nm lateral resolution and down to 1 nm depth resolution. Joint by a novel software for the calculation and display of 3-dimensional distributions of all chemical species, this leads to a totally new 3D NanoChemiscope.


Grant
Agency: European Commission | Branch: H2020 | Program: IA | Phase: ICT-25-2015 | Award Amount: 3.35M | Year: 2016

Within the food chain of equipment delivery for the semiconductor industry, Europe has kept a very strong position in the metrology area with many companies establishing themselves as main leaders in the field. Hence in line with the objectives of the ICT25 call for innovation action to overcome the (initial) barriers for the successful commercialization of novel European products, this project aims at exploring for a number of metrology solutions their technological readiness, reliability and relevance of the developed protocols, and the COO. The portfolio within the project covers new metrology concepts addressing specifically the processing challenges linked to 3D-Devices and range from probing basic layer properties (composition, electrical properties) in FEOL to control of metallization in BEOL up to issues linked to die stacking. Due to the specific processing steps which need to be addressed, three separate metrology tools will be assessed in this project i.e a Tofsims system (IonTOF) with build-in Scanning Probe stage and FIB column for true 3D-composition profiling, a completely automated micro-Hall and sheet resistance measurement tool (Capres) with additional capabilities for measurements on dedicated test structures (prior to full BEOL) and an GHz acoustic Microscope (Tepla) for probing voids in TSVs and stacked dies. As some of them (IonTOf, Capres) are addressing partly complementary information (composition versus electrical properties), their co-existence in this project creates additional value as beyond the tool assessment also a methodology based on combining these concepts can be explored and certified. Moreover a significant efficiency gain is created as they can employ similar test structures and devices. For each of these tools, the basic metrology concepts are existing and validated in the lab on selected applications but their general applicability field within the semiconductor industry still needs to be established


Rading D.,ION TOF GmbH | Moellers R.,ION TOF GmbH | Cramer H.-G.,ION TOF GmbH | Niehuis E.,ION TOF GmbH
Surface and Interface Analysis | Year: 2013

Dual beam depth profiling was applied in order to investigate the possibilities and limitations of C60 and Ar cluster ion sputtering for depth profiling of polymer materials. Stability and intensity of characteristic high mass molecular ion signals as well as sputter yields will be compared. For this purpose, different beam energies resulting in 2-10 eV/atom for Arn and 167-667 eV/atom for C60 sputtering were applied to various polymer samples. From our experiments, we can conclude that most of the limitations C60 sputtering suffers from could be successfully overcome and that the Ar gas cluster ion beam seems to be a more universal tool for sputtering of organic materials. Copyright © 2012 John Wiley & Sons, Ltd. Copyright © 2012 John Wiley & Sons, Ltd.


Sjovall P.,SP Technical Research Institute of Sweden | Rading D.,ION TOF GmbH | Ray S.,National Physical Laboratory United Kingdom | Yang L.,National Physical Laboratory United Kingdom | Shard A.G.,National Physical Laboratory United Kingdom
Journal of Physical Chemistry B | Year: 2010

We demonstrate two methods to improve the quality of organic depth profiling by C60 sputtering using multilayered reference samples as part of a VAMAS (Versailles project on Advanced Materials and Standards) interlaboratory study. Sample cooling was shown previously to be useful in extending the useful depth over which organic materials can be profiled. We reinforce these findings and demonstrate that cooling results in a lower initial sputtering yield to approximately -40 °C, but the improvement in useful profiling depth continues as the sample is cooled further, even though there is no further reduction in the initial sputtering yield. We report, for the first time, the use of sample rotation in organic depth profiling and demonstrate that the initial sputtering yield at room temperature is maintained throughout the depth of the samples used in this study. Useful profiling depth and good depth resolution are both associated with a constant sputtering yield. The fact that rotation results in the maintenance of depth resolution underlines the fact that depth resolution is often limited by the development of ion-beam-induced topography. Constant sputtering yield results in a constant secondary-ion yield, after transient processes have occurred, and this allows simple quantification methods to be applied to organic depth profiling data. © 2010 American Chemical Society.


A method is used in a time-of-flight mass spectrometer for analysis of a first pulsed ion beam, the ions of which are disposed along the pulse direction, separated with respect to their ion masses. The ions of at least one individual predetermined ion mass or of at least one predetermined range of ion masses can be decoupled from the first pulsed ion beam, as at least one decoupled ion beam, and the first ion beam and the at least one decoupled ion beam are analyzed.


The invention relates to a mass spectrometer comprising an ion source for producing a primary ion beam, which has a heatable ion emitter coated by a liquid metal layer essentially comprised of pure metallic Bismuth or of a low-melting-point alloy containing, in essence, Bismuth. A Bismuth ion mixed beam can be emitted by the ion emitter under the influence of an electric field. From the Bismuth ion mixed beam, one of a number of Bismuth ion types whose mass is a multiple of monatomic singly or multiply charged Bismuth ions Bi_(1)^(p+), is to be filtered out in the form of a mass-pure ion beam that is solely comprised of ions of a type Bi_(n)^(p+), in which n2 and p1, and n and p are each a natural number.


The invention relates to a mass spectrometer comprising an ion source for producing a primary ion beam, which has a heatable ion emitter coated by a liquid metal layer essentially comprised of pure metallic Bismuth or of a low-melting-point alloy containing, in essence, Bismuth. A Bismuth ion mixed beam can be emitted by the ion emitter under the influence of an electric field. From the Bismuth ion mixed beam, one of a number of Bismuth ion types whose mass is a multiple of monatomic singly or multiply charged Bismuth ions Bi_(1)^(p+), is to be filtered out in the form of a mass-pure ion beam that is solely comprised of ions of a type Bi_(n)^(p+), in which n2 and p1, and n and p are each a natural number.


The present invention relates to a method and to a mass spectrometer and uses thereof for detecting ions or subsequently-ionised neutral particles from samples. The method for operating a time-of-flight mass spectrometer for analysis of a first pulsed ion beam, the ions of which are disposed along the pulse direction, separated with respect to their ion masses, is characterised in that the ions of at least one individual predetermined ion mass or of at least one predetermined range of ion masses can be decoupled from the first pulsed ion beam as at least one decoupled ion beam and the first ion beam and the at least one decoupled ion beam are analysed.


A liquid metal ion source for use in an ion mass spectrometric analysis method contains, on the one hand, a first metal with an atomic weight 190 U and, on the other hand, another metal with an atomic weight 90 U. One of the two types of ions are filtered out alternately from the primary ion beam and directed onto the target as a mass-pure primary ion beam.


A method is used in a time-of-flight mass spectrometer for analysis of a first pulsed ion beam, the ions of which are disposed along the pulse direction, separated with respect to their ion masses. The ions of at least one individual predetermined ion mass or of at least one predetermined range of ion masses can be decoupled from the first pulsed ion beam, as at least one decoupled ion beam, and the first ion beam and the at least one decoupled ion beam are analyzed.

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