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Peynier, France

The present invention provides an ion implantation machine comprising: Furthermore, said plasma feed device AP also includes an auxiliary chamber AUX arranged beyond said final section, said auxiliary chamber opening out into said enclosure ENV at said terminal section.


Patent
Ion Beam Services | Date: 2011-06-01

The present invention relates to a dose-measurement device for ion implantation, the device comprising a module CUR for estimating implantation current, a secondary electron detector DSE, and a control circuit CC for estimating the ion current by taking the difference between said implantation current and the current from said secondary electron detector. Furthermore, said high-energy secondary electron detector comprises a collector COL, P supporting exactly three mutually insulated electrodes:


Patent
Ion Beam Services | Date: 2012-10-03

The present invention relates to a control module for an ion implanter having a power supply, the power supply comprising: The control module also comprises a current measurement circuit AMP for measuring the current that flows between the second pole of the second switch SW


Patent
Ion Beam Services | Date: 2013-11-25

The invention relates to an ion implanter that comprises an enclosure ENV having arranged therein a substrate carrier PPS connected to a substrate power supply ALT via a high voltage electrical passage PET, the enclosure ENV being provided with pump means PP, PS, the enclosure ENV also having at least two cylindrical source bodies CS


Patent
Ion Beam Services | Date: 2012-12-19

The present invention provides a support that comprises: The support also has at least one electrically conductive element

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