Ion Beam Services | Date: 2015-04-29
The present invention relates to a method of implanting impurities in a part. The method is remarkable in that the part is a gas diffusion device of the showerhead type in the form of a hollow body 1 having a gas admission orifice 2 and an ejection surface 3 provided with a plurality of holes, and the implanting takes place in the ejection surface.
Ion Beam Services | Date: 2015-02-04
The present invention relates to a support comprising: The support is remarkable in that the substrate carrier (20) incorporates a heating resistance (26).
Agency: European Commission | Branch: FP7 | Program: CP | Phase: ICT-2011.3.1 | Award Amount: 4.79M | Year: 2012
Among the physical limitations which challenge progress in nanoelectronics for aggressively scaled More Moore, Beyond CMOS and advanced More-than-Moore applications, process variability and the interactions between and with electrical, thermal and mechanical effects are getting more and more critical. Effects from various sources of process variations, both systematic and stochastic, influence each other and lead to variations of the electrical, thermal and mechanical behavior of devices, interconnects and circuits. Correlations are of key importance because they drastically affect the percentage of products which meet the specifications. Whereas the comprehensive experimental investigation of these effects is largely impossible, modelling and simulation (TCAD) offers the unique possibility to predefine process variations and trace their effects on subsequent process steps and on devices and circuits fab-ricated, just by changing the corresponding input data. This important requirement for and capability of simulation is among others highlighted in the International Technology Roadmap for Semiconductors ITRS. A project partner has also demonstrated how correlations can be simulated.\nWithin SUPERTHEME, the most important weaknesses which limit the use of current TCAD software to study the influence of both systematic and stochastic process variability and its interaction with electro-thermal-mechanical effects will be removed, and the study of correlations will be enabled. The project will efficiently combine the use of commercially available software and leading-edge background results of the consortium with the implementation of the key missing elements and links. It will bridge the current critical gap between variability simulation on process and device/interconnect level, and include the treatment of correlations. The capabilities of the software system will be demonstrated both on advanced analog circuits and on aggressively scaled transistors.
Agency: European Commission | Branch: H2020 | Program: RIA | Phase: NMBP-02-2016 | Award Amount: 8.05M | Year: 2017
Silicon carbide presents a high breakdown field (2-4 MV/cm) and a high energy band gap (2.33.2 eV), largely higher than for silicon. Within this frame, the cubic polytype of SiC (3C-SiC) is the only one that can be grown on a host substrate with the huge opportunity to grow only the silicon carbide thickness required for the targeted application. The possible growth on silicon substrate has remained for long period a real advantage in terms of scalability regarding the reduced diameter of hexagonal SiC wafer commercially available. Even the relatively narrow band-gap of 3C-SiC (2.3eV), which is often regarded as detrimental in comparison with other polytypes, can in fact be an advantage. The lowering of the conduction band minimum brings about a reduced density of states at the SiO2/3C-SiC interface and MOSFET on 3C-SiC has demonstrated the highest channel mobility of above 300 cm2/(Vxs) ever achieved on SiC crystals, prompting a remarkable reduction in the power consumption of these power switching devices. The electrical activity of extended defects in 3C SiC is a major concern for electronic device functioning. To achieve viable commercial yields the mechanisms of defects must be understood and methods for their reduction developed.. In this project new approaches for the reduction of defects will be used, working on new compliance substrates that can help to reduce the stress and the defect density at the same time. This growth process will be driven by numerical simulations of the growth and simulations of the stress reduction. The structure of the final devices will be simulated using the appropriated numerical tools where new numerical model will be introduced to take into account the properties of the new material. Thanks to these simulations tools and the new material with low defect density, several devices that can work at high power and with low power consumption will be realized inside the project.
Agency: European Commission | Branch: H2020 | Program: ECSEL-IA | Phase: ECSEL-14-2015 | Award Amount: 61.99M | Year: 2016
Addressing European Policies for 2020 and beyond the Power Semiconductor and Electronics Manufacturing 4.0 (SemI40) project responds to the urgent need of increasing the competitiveness of the Semiconductor manufacturing industry in Europe through establishing smart, sustainable, and integrated ECS manufacturing. SemI40 will further pave the way for serving highly innovative electronic markets with products powered by microelectronics Made in Europe. Positioned as an Innovation Action it is the high ambition of SemI40 to implement technical solutions on TRL level 4-8 into the pilot lines of the industry partners. Challenging use cases will be implemented in real manufacturing environment considering also their technical, social and economic impact to the society, future working conditions and skills needed. Applying Industry 4.0, Big Data, and Industrial Internet technologies in the electronics field requires holistic and complex actions. The selected main objectives of SemI40 covered by the MASP2015 are: balancing system security and production flexibility, increase information transparency between fields and enterprise resource planning (ERP), manage critical knowledge for improved decision making and maintenance, improve fab digitalization and virtualization, and enable automation systems for agile distributed production. SemI40s value chain oriented consortium consists of 37 project partners from 5 European countries. SemI40 involves a vertical and horizontal supply chain and spans expertise and partners from raw material research, process and assembly innovation and pilot line, up to various application domains representing enhanced smart systems. Through advancing manufacturing of electronic components and systems, SemI40 contributes to safeguard more than 20.000 jobs of people directly employed in the participating facilities, and in total more than 300.000 jobs of people employed at all industry partners facilities worldwide.
Agency: European Commission | Branch: H2020 | Program: RIA | Phase: LCE-01-2014 | Award Amount: 4.44M | Year: 2015
The key to the efficient transmission and conversion of low-carbon electrical energy is the improvement of power electronic devices. Diamond is considered to be the ultimate wide bandgap semiconductor material for applications in high power electronics due to its exceptional thermal and electronic properties. Two recent developments - the emergence of commercially available electronic grade single crystals and a scientific breakthrough in creating a MOS channel in diamond technology, have now opened new opportunities for the fabrication and commercialisation of diamond power transistors. These will result in substantial improvements in the performance of power electronic systems by offering higher blocking voltages, improved efficiency and reliability, as well as reduced thermal requirements thus opening the door to more efficient green electronic systems. These improvements are expected to increase the efficiency of power converters by a factor of 4, yielding a 75% reduction in losses. In this context, the objective of GreenDiamond is to fabricate a 10kV transistor in a high power package, followed by a high voltage AC/DC converter based on such devices. To meet GreenDiamonds challenging goals, the consortium gathers experts on power device design, diamond growth and characterization, packaging and testing as well as an innovative end-user. Most of the partners are also involved in SiC or GaN technology, allowing the project to benefit from their ample experience and achievements in wide bandgap semiconductors. As far as diamond transistor structure is concerned, unlike GaN and SiC, Europe still has a significant scientific and technological advantage over non-EU competitors. It is therefore extremely important to maintain the competitive edge that will lead the development of truly green electronics in the near to medium term future.
Ion Beam Services | Date: 2014-09-26
The invention relates to a method (800) for producing a contact structure (104) of a photovoltaic cell (100), wherein the method (800) comprises a step (802) of providing, a step (804) of doping, and a step (806) of contacting. In step (802) of providing, a wafer (102) for the photovoltaic cell (100) is provided. In step (804) of doping, a surface portion of at least one side of the wafer (102) is doped with a doping material in order to obtain a doped region (106), wherein the doped region (106) is formed as doped tracks (106) and the tracks (106) are separated by intermediate spaces (110). In step (806) of contacting, the doped region (106) is contacted in order to produce the contact structure (104), wherein a conductor material (108) is applied to the tracks (106) in such a way that the tracks (106) protrude beyond the conductor material (108) on both sides.
Ion Beam Services | Date: 2014-04-09
The present invention relates to an ion implantation machine 100 that comprises: The machine is remarkable in that:
Ion Beam Services | Date: 2014-09-26
The invention relates to a method for producing a solar cell (1) from crystalline semiconductor material. In a first surface (3a) of a semiconductor substrate (3), a first doping area (5) is formed by thermally diffusing a first dopant and in the second surface (3b) of the semiconductor substrate, a second doping area (7) is formed by implanting ions and thermally implanting a second dopant.
Ion Beam Services | Date: 2014-03-20
A method of doping a silicon wafer in order to fabricate a photovoltaic cell, the method comprising the steps consisting in: