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Scalise E.,Catholic University of Leuven | Houssa M.,Catholic University of Leuven | Pourtois G.,University of Antwerp | Pourtois G.,Interuniversity Microelectronics Center | And 2 more authors.
Nano Research | Year: 2012

The electronic properties of two-dimensional honeycomb structures of molybdenum disulfide (MoS 2) subjected to biaxial strain have been investigated using first-principles calculations based on density functional theory. On applying compressive or tensile bi-axial strain on bi-layer and mono-layer MoS 2, the electronic properties are predicted to change from semiconducting to metallic. These changes present very interesting possibilities for engineering the electronic properties of two-dimensional structures of MoS 2. © 2012 Tsinghua University Press and Springer-Verlag Berlin Heidelberg.

Lentz F.,Julich Research Center | Roesgen B.,JARA Fundamentals in Future Information Technology | Rana V.,Julich Research Center | Wouters D.J.,Interuniversity Microelectronics Center | And 2 more authors.
IEEE Electron Device Letters | Year: 2013

Nonvolatile redox-based resistive RAM (ReRAM) is considered to be a promising candidate for passive nanocrossbar integration. For this application, a high degree of nonlinearity in I-V characteristics of the ReRAM device is required. In this letter, the nonlinearity parameter as a function of forming/SET current compliance in a MOSFET-integrated TiN/TiO2/Ti/Pt ReRAM device is investigated. The nonlinearity parameter in the ReRAM device improves at the lower SET current compliance. This is due to scaling down the conductive filaments during the forming and the SET process. The nonlinearity is further increased by scaling down the oxide thickness that is accompanied by a reduction of the switching current. © 1980-2012 IEEE.

Tsai T.-H.,National Central University | Lin H.-Y.,Interuniversity Microelectronics Center
IEEE Transactions on Circuits and Systems for Video Technology | Year: 2013

Liquid crystal displays (LCDs), which serve as receivers of high visual quality video, suffer from motion blur issues. One of the methods in terminating motion blur is motion compensated frame rate upconversion, which is widely adopted in LCDs. In the previous work, i.e., particle-based frame rate upconversion, the computation complexity is high while repeated operations and some improper cost evaluation setup are observed. Therefore, in this paper, hybrid frame rate upconversion is proposed with two features. First, the cost evaluation for particle-based motion trajectory calibration is modified based on the possible noise sources and video resolution variations. Second, repeated operations in particle-based motion trajectory calibration are observed. Therefore, original particle-based motion trajectory calibration is replaced by initial motion vector assignment and subsequent motion vector mapping to achieve computation complexity reduction, while the effective search range is relatively expanded. According to the experiment results, the visual quality is enhanced by 1.87 dB on average, compared with state-of-the-art unidirectional-based frame rate upconversion approaches. On the other hand, the computation complexity of the proposed design is reduced by 25-90% based on target video resolution, concluding a high visual quality and low computation complexity frame rate upconversion design. © 2013 IEEE.

Yu H.,Ghent University | Bogaerts W.,Ghent University | De Keersgieter A.,Interuniversity Microelectronics Center
IEEE Journal of Quantum Electronics | Year: 2010

We study the influence of ion implantation conditions on the performance of depletion-type silicon optical modulators by a combined simulation of the process flow, the electrical characteristic, and the beam propagation. Through calculations using different implantation positions, energies, and tilt angles, this paper reveals that a gap between specific implantation windows is able to alleviate the modulation efficiency degradation due to the lateral straggling of implanted ions, while a tilt angle reduces the optical loss without harming the modulation efficiency. After an optimization of the implantation condition, the extinction ratio of the Mach-Zehnder modulator can be improved by 4.6 dB, while its optical loss falls from 3 to 2.47 dB. Finally, a simplified doping pattern that eliminates two implantation steps is discussed. © 2010 IEEE.

Waldron N.,Massachusetts Institute of Technology | Waldron N.,Interuniversity Microelectronics Center | Kim D.-H.,Massachusetts Institute of Technology | Del Alamo J.A.,Massachusetts Institute of Technology
IEEE Transactions on Electron Devices | Year: 2010

In this paper, we present a novel self-aligned process for future III-V logic FETs. Using this process, we have demonstrated enhancement-mode 90-nm-gate-length InGaAs HEMTs with excellent logic figures of merit.We have carried out a detailed analysis of this device architecture to determine its future scaling capabilities. We find that, as the insulator is scaled to achieve enhancement mode, the performance of the device is limited by degradation of the ION/IOFF ratio due to gate leakage current. By use of TLM test structures, we have determined that the barrier resistance dominates the source resistance. We use a trilayer TLM model to predict the expected evolution of the contact resistance as it is scaled to realistic VLSI dimensions and find that the current technology results in resistance values that are two orders of magnitude higher than the desired target for sub-22-nm nodes. Using the model, we explore different options for device redesign. Both I ON/IOFF and source-resistance limitations imply that the use of a high-k gate dielectric will be required for future device implementations. © 2009 IEEE.

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