Interuniversitair Micro Elektronica Centrum
Interuniversitair Micro Elektronica Centrum
Ramon V.,Interuniversitair Micro Elektronica Centrum
IEEE International Conference on Communications | Year: 2010
This paper presents a novel fair scheme for resource sharing between nodes in OFDMA mesh networks. The problem is to maximize the overall system rate, under each user's maximal power and minimum rate constraints. To solve the underlying problem, we propose an approach that combines the merits of the well known Lagrange dual framework and the Lambert-W function. By using the Lambert-W function, resource allocation can not only be expressed in closed form but it can also quickly be determined without resorting to complex algorithms since a number of popular mathematical softwares, including Matlab, contain the Lambert-W function as an optimization component. Simulation results are provided to compare the performance of the proposed scheme with other allocation schemes. ©2010 IEEE.
Sherazi S.M.Y.,Catholic University of Leuven |
Sherazi S.M.Y.,Interuniversitair Micro Elektronica Centrum |
Chava B.,Interuniversitair Micro Elektronica Centrum |
Debacker P.,Interuniversitair Micro Elektronica Centrum |
And 7 more authors.
Journal of Micro/ Nanolithography, MEMS, and MOEMS | Year: 2016
Standard-cell design and characterization are presented for 7-nm CMOS platform technology targeting low-power and high-performance applications with the tightest contacted poly pitch of 42 nm and a metallization pitch of 32 nm in the FinFET technology. Two standard-cell architectures for 7 nm, a 9-track library and a 7.5-track library have been designed, introducing an extra middle-of-line layer to enable an efficient layout of the 7.5-track cells. The 7.5-track cells are on average smaller than the 9-track cells. With the strict design constraints imposed by self-aligned quadruple patterning and self-aligned double patterning, careful design and technology co-optimization is performed. © 2016 Society of Photo-Optical Instrumentation Engineers (SPIE).
Barrett C.A.,University of Limerick |
Gunning R.D.,University of Limerick |
Hantschel T.,Interuniversitair Micro Elektronica Centrum |
Arstila K.,Interuniversitair Micro Elektronica Centrum |
And 3 more authors.
Journal of Materials Chemistry | Year: 2010
High yields of both single-crystalline Si and Ge/SiOx core-shell nanowires were nucleated and grown in metal reactor cells under high-pressure supercritical fluid conditions, without the addition of catalyst particle seeds or a porous template. Nanowire growth was only achieved when the fluid medium of supercritical CO2 and the organometallic precursors were used in conjunction with a coordinating solvent, trioctylphosphine. The diameter and length of the nanowires are found to be in the ranges of 30 to 60 nm and 1 to 10 m, respectively. The correlation of nanowire growth with the eutectic binary phase diagrams of the semiconductor-metal and the presence of metal impurities at the base of the synthesized nanowires suggest a supercritical fluid-solid-solid growth mechanism occurring from the reaction cell walls. The nanowires are characterized by transmission electron microscopy, energy-dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy and scanning electron microscopy. The electrical characteristics for individually picked nanowires are also investigated by means of mechanical nanoprobing. © 2010 The Royal Society of Chemistry.
Baek J.Y.,University of California at Berkeley |
Leray P.,Interuniversitair Micro Elektronica Centrum |
Charley A.-L.,Interuniversitair Micro Elektronica Centrum |
Spanos C.J.,University of California at Berkeley
Journal of Micro/ Nanolithography, MEMS, and MOEMS | Year: 2014
Scatterometry-based critical dimension (CD), also known as optical CD (OCD), significantly matches CD scanning electron microscopy in accuracy and precision, in addition to offering superior full-profile reconstruction. OCD, however, is computationally intensive. We construct an extremely fast screening tool that determines whether a sample should or should not proceed to subsequent manufacturing steps. To this end, we examine the diffraction signals of the grating in order to determine whether a sample is in or out of its specification limits. This allows us to allocate traditional metrology resources only for samples that show unusual behavior. Support vector machines (SVMs) are trained to classify each incoming sample as in-spec or out-of-spec. The constructed classifier is applied to gratings exposed with a focus-exposure matrix for a rectangular silicon-bottom anti-reflective coating-photoresist stack, which include erroneous samples with under over exposure, necking, and bridging problems. The misclassification rates as well as false and missed alarm rates are analyzed. Results show that our prototype screening system has misclassification errors on the order of 5% to 10%, while the computation time is on the order of one vector dot product. © 2014 Society of Photo-Optical Instrumentation Engineers.
Interuniversitair Micro Elektronica Centrum and Vrije Universiteit Brussel | Date: 2011-02-02
The present invention is related to a pipelined analog-to-digital converter, ADC, for converting an analog input signal into a digital signal comprising- a plurality of comparing means having tuneable thresholds for comparing an input signal with; at least two of said given thresholds being different and- a plurality of amplifying circuits,- wherein said plurality of comparing means is configured to form a hierarchical tree structure, said hierarchical tree structure having a plurality of hierarchical levels, wherein at least one of said hierarchical levels is associated with at least one amplifying circuit of said plurality of amplifying circuits, said at least one amplifying circuit generating the input of at least one comparing means at the next hierarchical level and- wherein said plurality of hierarchical levels comprises means for setting said tuneable thresholds in accordance to the output of previous hierarchical level so that non-linear distortion of the preceding hierarchical level is removed.