El Segundo, CA, United States
El Segundo, CA, United States

International Rectifier is an American power management technology company that manufactures analog and mixed-signal ICs, advanced circuit devices, integrated power systems, and integrated components that enable high-performance in computing. IR's products are used in motherboards, appliances, lighting, automobiles, satellites, aircraft, and defense systems. On 13 January 2015 the company became a part of Infineon Technologies. Wikipedia.


Time filter

Source Type

News Article | May 5, 2017
Site: www.businesswire.com

SAN JOSE, Calif.--(BUSINESS WIRE)--Lumileds, the global leader in light engine technology, announced the appointment of Ilan Daskal as its Chief Financial Officer (CFO), effective May 1. Daskal has over 25 years of experience in numerous senior financial roles, including Vice President of Finance at Infineon Technologies NA and CFO at International Rectifier. “We are thrilled to have Ilan join our team. His breadth of experience in operations, mergers and acquisitions, and capital markets will help drive Lumileds future growth,” said CEO Mark Adams. Lumileds is a wholly-owned subsidiary of Royal Philips (NYSE:PHG, AEX: PHIA). Philips announced on December 12, 2016 that it signed an agreement to sell a majority interest in Lumileds to certain funds managed by affiliates of Apollo Global Management, LLC (NYSE: APO). The transaction is expected to be completed in the first half of 2017, subject to customary closing conditions. As required under the signed agreement, Apollo has been appropriately briefed on the appointment of Ilan Daskal as CFO. “I could not be more excited about joining the executive team at Lumileds. The company’s legacy of innovation, customer engagement and performance leadership are all compelling factors that will drive continued success,” added Daskal. Lumileds develops, manufactures and distributes groundbreaking LEDs and automotive lighting products, with 9,300 employees spanning operations in over 32 countries. Lumileds is the global leader in light engine technology. The company develops, manufactures and distributes groundbreaking LEDs and automotive lighting products that shatter the status quo and help customers gain and maintain a competitive edge. With a rich history of industry “firsts,” Lumileds is uniquely positioned to deliver lighting advancements well into the future by maintaining an unwavering focus on quality, innovation and reliability. To learn more about our portfolio of light engines, visit lumileds.com.


News Article
Site: www.asminternational.org

SEMI, San Jose, Calif., announces the recipients of the 2015 SEMI Awards for innovations that have become such an integral part of the semiconductor manufacturing industry's infrastructure that the technology itself has become fundamental. The awards for the Americas honor (left to right in photo) Chenming Hu (for the BSIM families of compact transistor models); Alex Lidow for commercialization of GaN power devices; and an Intel team representred by Robert S. Chau  for implementation of bulk CMOS FinFET production. The awards were presented at the 2016 SEMI Industry Strategy Symposium (ISS) in Half Moon Bay, Calif. 2015 award recipients all share the distinction of having pioneered processes and integration breakthroughs that became ubiquitous. For developing the Berkeley Short-channel Insulated-gate FET Model (BSIM) families of compact transistor models, enabling worldwide adoption of advanced device technologies, Professor Chenming Hu was presented with the 2015 Americas SEMI award. Analog circuit simulators, such as Simulation Program with Integrated Circuit Emphasis (SPICE), form the foundation for circuit simulators used in integrated circuit design, and compact transistor models are the heart of simulators. BSIM3 and its successors, developed in the BSIM group at University of California Berkeley under the leadership of Professor Hu, are the industry standard for transistor modeling. For the past 20+ years, all commercial circuit simulators have included BSIM models. The Americas SEMI award was presented to Dr. Alex Lidow, Ph.D., for innovation in power device technology enabling commercialization of GaN devices with performance and cost advantages over silicon. Silicon-based devices were reaching their limits in speed and efficiency, prompting Lidow to develop Gallium Nitride (GaN) technologies, but high cost limited its commercial success. Lidow led the GaN development activity at International Rectifier and continued that work at Efficient Power Conversion Corporation (EPC), a company he co-founded in 2007. EPC introduced the first commercial enhancement mode GaN power transistors in 2009. Challenges from resolving packaging limitations to establishing a low-cost supply chain were overcome through persistence, paving the way for the successful commercialization of GaN power devices. An Intel development team ─ Christopher P. Auth, Robert S. Chau, Brian S. Doyle, Tahir Ghani and Kaizad R. Mistry ─ were honored with SEMI Awards for the first development, integration and introduction of a successful bulk FinFET technology for CMOS IC production, first implemented at the 22nm node in 2011. The successful introduction of a bulk FinFET process in commercial IC logic and I/O devices, aided by support from SEMI member companies with development of advanced materials, processes and production tools, was a critically important milestone, which led to the widespread adoption of bulk FinFETs as the technology of choice of leading-edge, fully-depleted CMOS logic devices.


News Article | November 18, 2016
Site: www.newsmaker.com.au

This report studies Audio IC in Global market, especially in North America, Europe, China, Japan, Korea and Taiwan, focuses on top manufacturers in global market, with production, price, revenue and market share for each manufacturer, covering  ST  Texas Instruments  ROHM Semiconductor  ON semiconductor  Toshiba  AMS  Atmel  Cirrus logic  Epson  Fairchild  Freescale  Infineon  International Rectifier  Intersil  ISSI  Maxim Integrated  Monolithic power systems  NJR  Nordic  NXP  THAT Market Segment by Regions, this report splits Global into several key Regions, with production, consumption, revenue, market share and growth rate of Audio IC in these regions, from 2011 to 2021 (forecast), like  North America  Europe  China  Japan  Korea  Taiwan Split by product type, with production, revenue, price, market share and growth rate of each type, can be divided into  Audio A/D Converter ICs  Audio Processors IC  Audio Amplifiers IC  Audio D/A Converter ICs  Others Split by application, this report focuses on consumption, market share and growth rate of Audio IC in each application, can be divided into  Consumer audio  Enterprise audio  Automotive audio  Computer audio 1 Audio IC Market Overview  1.1 Product Overview and Scope of Audio IC  1.2 Audio IC Segment by Type  1.2.1 Global Production Market Share of Audio IC by Type in 2015  1.2.2 Audio A/D Converter ICs  1.2.3 Audio Processors IC  1.2.4 Audio Amplifiers IC  1.2.5 Audio D/A Converter ICs  1.2.6 Others  1.3 Audio IC Segment by Application  1.3.1 Audio IC Consumption Market Share by Application in 2015  1.3.2 Consumer audio  1.3.3 Enterprise audio  1.3.4 Automotive audio  1.3.5 Computer audio  1.4 Audio IC Market by Region  1.4.1 North America Status and Prospect (2011-2021)  1.4.2 Europe Status and Prospect (2011-2021)  1.4.3 China Status and Prospect (2011-2021)  1.4.4 Japan Status and Prospect (2011-2021)  1.4.5 Korea Status and Prospect (2011-2021)  1.4.6 Taiwan Status and Prospect (2011-2021)  1.5 Global Market Size (Value) of Audio IC (2011-2021) 2 Global Audio IC Market Competition by Manufacturers  2.1 Global Audio IC Production and Share by Manufacturers (2015 and 2016)  2.2 Global Audio IC Revenue and Share by Manufacturers (2015 and 2016)  2.3 Global Audio IC Average Price by Manufacturers (2015 and 2016)  2.4 Manufacturers Audio IC Manufacturing Base Distribution, Sales Area and Product Type  2.5 Audio IC Market Competitive Situation and Trends  2.5.1 Audio IC Market Concentration Rate  2.5.2 Audio IC Market Share of Top 3 and Top 5 Manufacturers  2.5.3 Mergers & Acquisitions, Expansion 3 Global Audio IC Production, Revenue (Value) by Region (2011-2016)  3.1 Global Audio IC Production by Region (2011-2016)  3.2 Global Audio IC Production Market Share by Region (2011-2016)  3.3 Global Audio IC Revenue (Value) and Market Share by Region (2011-2016)  3.4 Global Audio IC Production, Revenue, Price and Gross Margin (2011-2016)  3.5 North America Audio IC Production, Revenue, Price and Gross Margin (2011-2016)  3.6 Europe Audio IC Production, Revenue, Price and Gross Margin (2011-2016)  3.7 China Audio IC Production, Revenue, Price and Gross Margin (2011-2016)  3.8 Japan Audio IC Production, Revenue, Price and Gross Margin (2011-2016)  3.9 Korea Audio IC Production, Revenue, Price and Gross Margin (2011-2016)  3.10 Taiwan Audio IC Production, Revenue, Price and Gross Margin (2011-2016) 4 Global Audio IC Supply (Production), Consumption, Export, Import by Regions (2011-2016)  4.1 Global Audio IC Consumption by Regions (2011-2016)  4.2 North America Audio IC Production, Consumption, Export, Import by Regions (2011-2016)  4.3 Europe Audio IC Production, Consumption, Export, Import by Regions (2011-2016)  4.4 China Audio IC Production, Consumption, Export, Import by Regions (2011-2016)  4.5 Japan Audio IC Production, Consumption, Export, Import by Regions (2011-2016)  4.6 Korea Audio IC Production, Consumption, Export, Import by Regions (2011-2016)  4.7 Taiwan Audio IC Production, Consumption, Export, Import by Regions (2011-2016) 7 Global Audio IC Manufacturers Profiles/Analysis  7.1 ST  7.1.1 Company Basic Information, Manufacturing Base and Its Competitors  7.1.2 Audio IC Product Type, Application and Specification  7.1.2.1 Type I  7.1.2.2 Type II  7.1.3 ST Audio IC Production, Revenue, Price and Gross Margin (2015 and 2016)  7.1.4 Main Business/Business Overview  7.2 Texas Instruments  7.2.1 Company Basic Information, Manufacturing Base and Its Competitors  7.2.2 Audio IC Product Type, Application and Specification  7.2.2.1 Type I  7.2.2.2 Type II  7.2.3 Texas Instruments Audio IC Production, Revenue, Price and Gross Margin (2015 and 2016)  7.2.4 Main Business/Business Overview  7.3 ROHM Semiconductor  7.3.1 Company Basic Information, Manufacturing Base and Its Competitors  7.3.2 Audio IC Product Type, Application and Specification  7.3.2.1 Type I  7.3.2.2 Type II  7.3.3 ROHM Semiconductor Audio IC Production, Revenue, Price and Gross Margin (2015 and 2016)  7.3.4 Main Business/Business Overview  7.4 ON semiconductor  7.4.1 Company Basic Information, Manufacturing Base and Its Competitors  7.4.2 Audio IC Product Type, Application and Specification  7.4.2.1 Type I  7.4.2.2 Type II  7.4.3 ON semiconductor Audio IC Production, Revenue, Price and Gross Margin (2015 and 2016)  7.4.4 Main Business/Business Overview  7.5 Toshiba  7.5.1 Company Basic Information, Manufacturing Base and Its Competitors  7.5.2 Audio IC Product Type, Application and Specification  7.5.2.1 Type I  7.5.2.2 Type II


News Article | November 29, 2016
Site: www.newsmaker.com.au

MarketStudyReport.com adds “United States Rectifier Diode Market Report 2016" new report to its research database. The report spread across 112 pages with table and figures in it. This report studies sales (consumption) of Rectifier Diode in United States market, focuses on the top players, with sales, price, revenue and market share for each player, covering Toshiba Rohm Vishay Pan Jit International ST Microelectronics NXP RENESAS ON Semiconductor Fairchild Good-Ark Sanken Electronic Diodes Infineon Yangzhou Yangjie BOURNS Panasonic Kexin Microsemi Browse full table of contents and data tables at  https://www.marketstudyreport.com/reports/united-states-rectifier-diode-market-report-2016/ Split by product types, with sales, revenue, price, market share and growth rate of each type, can be divided into Type I Type II Type III Split by applications, this report focuses on sales, market share and growth rate of Rectifier Diode in each application, can be divided into Application 1 Application 2 Application 3 5 United States Rectifier Diode Manufacturers Profiles/Analysis 5.1 Toshiba 5.1.1 Company Basic Information, Manufacturing Base and Competitors 5.1.2 Rectifier Diode Product Type, Application and Specification 5.1.2.1 Type I 5.1.2.2 Type II 5.1.3 Toshiba Rectifier Diode Sales, Revenue, Price and Gross Margin (2011-2016) 5.1.4 Main Business/Business Overview 5.2 Rohm 5.2.2 Rectifier Diode Product Type, Application and Specification 5.2.2.1 Type I 5.2.2.2 Type II 5.2.3 Rohm Rectifier Diode Sales, Revenue, Price and Gross Margin (2011-2016) 5.2.4 Main Business/Business Overview 5.3 Vishay 5.3.2 Rectifier Diode Product Type, Application and Specification 5.3.2.1 Type I 5.3.2.2 Type II 5.3.3 Vishay Rectifier Diode Sales, Revenue, Price and Gross Margin (2011-2016) 5.3.4 Main Business/Business Overview 5.4 Pan Jit International 5.4.2 Rectifier Diode Product Type, Application and Specification 5.4.2.1 Type I 5.4.2.2 Type II 5.4.3 Pan Jit International Rectifier Diode Sales, Revenue, Price and Gross Margin (2011-2016) 5.4.4 Main Business/Business Overview 5.5 ST Microelectronics 5.5.2 Rectifier Diode Product Type, Application and Specification 5.5.2.1 Type I 5.5.2.2 Type II 5.5.3 ST Microelectronics Rectifier Diode Sales, Revenue, Price and Gross Margin (2011-2016) 5.5.4 Main Business/Business Overview 5.6 NXP 5.6.2 Rectifier Diode Product Type, Application and Specification 5.6.2.1 Type I 5.6.2.2 Type II 5.6.3 NXP Rectifier Diode Sales, Revenue, Price and Gross Margin (2011-2016) 5.6.4 Main Business/Business Overview 5.7 RENESAS 5.7.2 Rectifier Diode Product Type, Application and Specification 5.7.2.1 Type I 5.7.2.2 Type II 5.7.3 RENESAS Rectifier Diode Sales, Revenue, Price and Gross Margin (2011-2016) 5.7.4 Main Business/Business Overview 5.8 ON Semiconductor 5.8.2 Rectifier Diode Product Type, Application and Specification 5.8.2.1 Type I 5.8.2.2 Type II 5.8.3 ON Semiconductor Rectifier Diode Sales, Revenue, Price and Gross Margin (2011-2016) 5.8.4 Main Business/Business Overview 5.9 Fairchild 5.9.2 Rectifier Diode Product Type, Application and Specification 5.9.2.1 Type I 5.9.2.2 Type II 5.9.3 Fairchild Rectifier Diode Sales, Revenue, Price and Gross Margin (2011-2016) 5.9.4 Main Business/Business Overview 5.10 Good-Ark 5.10.2 Rectifier Diode Product Type, Application and Specification 5.10.2.1 Type I 5.10.2.2 Type II 5.10.3 Good-Ark Rectifier Diode Sales, Revenue, Price and Gross Margin (2011-2016) 5.10.4 Main Business/Business Overview 5.11 Sanken Electronic 5.12 Diodes 5.13 Infineon 5.14 Yangzhou Yangjie 5.15 BOURNS 5.16 Panasonic 5.17 Kexin 5.18 Microsemi To receive personalized assistance write to us @ [email protected] with the report title in the subject line along with your questions or call us at +1 866-764-2150


News Article | November 12, 2016
Site: www.newsmaker.com.au

Intelligent power switches are also called as smart power switches because of its advanced functionality. Intelligent power switches are used for high side and low side configurations and are designed for handling normal overload conditions in addition to several extraordinary conditions. Intelligent power switches finds their application in automotive, industrial and commercial sectors. In Intelligent power switches, control section and power stage is integrated on the same chip. Control section includes drivers, logic interface, protection and diagnostic features. Intelligent Power Switches provides benefits such as cost effectiveness, compactness increased system reliability and over temperature protection. On the basis of type, the intelligent power switches market can be segmented as high side switches and low side switches. High side switches are used to drive capacitive, inductive and resistive loads and provide protection against over temperature, short circuit and overload. High side switches are used in all kinds of industrial as well as automotive applications. Low side switches are used to drive resistive and inductive loads and it provide protection against over current, over/under voltage and over temperature. Low side power switches are used in automotive, industrial and commercial applications. Intelligent power switches market can also be segmented on the basis of application. This includes automotive, industrial, commercial and construction application. Intelligent power switches are used in various automotive electrical system such as solenoid and valve driver, in safety features such as window lifters, windshield wipers and power seats. In Industrial applications, intelligent power switches are used where intelligent protection and gate drivers provides component and space saving such as vending machines and traffic signs. Intelligent power switches also finds their application in hydraulic valve control, safety relay replacement, flap driver of construction, commercial and agriculture vehicles. The global intelligent power switches market is expected to witness robust growth through 2025 due to rising demand of intelligent power switches in automotive and industrial application across globe. Region wise the global intelligent power switches market is classified into North America, Latin America, Western Europe, Eastern Europe, Asia pacific, Japan, and Middle East and Africa (MEA). China is leading the intelligent power switches market in terms of manufacturing. Increasing use of intelligent power switches into automotive and industrial applications is expected to drive the growth of intelligent power switches market throughout the forecast period. Benefits of intelligent power switches such compactness, high reliability and cost effectiveness further expected to drive the market growth. The key international players operating in intelligent power switches market includes RICOH Electronic Devices Co., Ltd., International Rectifier, STMicroelectronics, Infineon Technologies AG, Freescale Semiconductor, Inc., Texas Instruments Incorporated., ROHM Semiconductor, Fuji Electric Co. LTD., and SCHUKAT electronic etc. Persistence Market Research (PMR) is a third-platform research firm. Our research model is a unique collaboration of data analytics and market research methodology to help businesses achieve optimal performance. To support companies in overcoming complex business challenges, we follow a multi-disciplinary approach. At PMR, we unite various data streams from multi-dimensional sources. By deploying real-time data collection, big data, and customer experience analytics, we deliver business intelligence for organizations of all sizes.


Grant
Agency: GTR | Branch: EPSRC | Program: | Phase: Research Grant | Award Amount: 414.66K | Year: 2011

GaN power electronics, in particular, AlGaN/GaN high electron mobility transistors (HEMT) are currently being developed and starting to be applied for power conversion, radar, satellite and communication applications. Switched mode power systems based on this will deliver improved efficiency, hence forming a key enabling technology for the low carbon economy. Although performance of these devices is fully sufficient to enable disruptive changes for many system applications, reliability is presently still in question, not only in the UK and Europe, but also in the USA and Japan. This proposal aims at developing a new electrical methodology to study and understand reliability of GaN based HEMTs, in particular to identify the nature of electronic traps generated during the operation of GaN HEMTs, and which affect their lifetime. The programme is supported by key UK, European and US industries (International Rectifier UK, Fraunhofer Institute IAF Germany, UMS Germany, TriQuint USA), and builds on leading expertise in the field of GaN HEMT reliability developed at the Center for Device Thermography and Reliability (CDTR) in Bristol, established in various research programmes in Bristol funded by EPSRC and the US Office of Naval Research (ONR). The focus of this work will lie in overcoming the challenge that the highly accurate standard Capacitance-Voltage (CV) or Conductance technique for probing electronic traps in semiconductor devices cannot be performed on transistor structures relevant to real applications. This is because these techniques require large transistor structures to have enough capacitance to be measurable. Realistic devices have short gate length with consequently too low a capacitance to be accurately measured at the typical measurement frequency of 1kHz-1MHz, also any damage introduced into a device during device operation is typically in too small an area to be easily detectable using traditional techniques. In contrast, methods which can be applied to small III-V FET devices such as current-DLTS or transconductance dispersion respectively use a non-equilibrium pulse technique which is prone to misinterpretation, or have only given qualitative information to date. A key insight which underpins this proposal is that electronic traps in or near the channel primarily generate dispersion in a device below the pinch off voltage in the sub-threshold regime of operation which will be exploited in this programme. We will develop a dynamic transconductance method for GaN HEMT reliability analysis, suitable for small HEMT devices and insensitive to gate leakage currents. The development of this new electrical methodology which delivers the advantages of the quasi-equilibrium capacitance techniques but in small devices, will allow accurate measurements of degradation induced trap properties to be made for the first time. Noise measurements will complement this novel trap analysis, in additional we will benefit from the pulsed electrical-optical trapping analysis technique we developed in the ONR funded DRIFT programme. The work will advance the understanding of GaN HEMT device degradation during operation, i.e., device reliability, and will keep the UK at the forefront of internationally leading semiconductor device reliability research. The methodologies to be developed will also have direct applicability to the burgeoning worldwide effort in III-V CMOS technology for scaled low-power logic.


News Article | November 16, 2016
Site: www.newsmaker.com.au

This report studies High-voltage MOSFET in Global market, especially in North America, Europe, China, Japan, Korea and Taiwan, focuses on top manufacturers in global market, with production, price, revenue and market share for each manufacturer, covering Fairchild Semiconductor International Infineon Technologies AG International Rectifier Renesas Electronics Toshiba Corp. Vishay Intertechnology Inc. Diodes Inc. NXP Semiconductors N.V. On Semiconductor Corp. Rohm Co. Ltd STMicroelectronics N.V Market Segment by Regions, this report splits Global into several key Regions, with production, consumption, revenue, market share and growth rate of High-voltage MOSFET in these regions, from 2011 to 2021 (forecast), like North America Europe China Japan Korea Taiwan Split by product type, with production, revenue, price, market share and growth rate of each type, can be divided into Type I Type II Type III Split by application, this report focuses on consumption, market share and growth rate of High-voltage MOSFET in each application, can be divided into Electric Vehicles High-Capacity Networks Industrial Applications Global High-voltage MOSFET Market Research Report 2016 1 High-voltage MOSFET Market Overview 1.1 Product Overview and Scope of High-voltage MOSFET 1.2 High-voltage MOSFET Segment by Type 1.2.1 Global Production Market Share of High-voltage MOSFET by Type in 2015 1.2.2 Type I 1.2.3 Type II 1.2.4 Type III 1.3 High-voltage MOSFET Segment by Application 1.3.1 High-voltage MOSFET Consumption Market Share by Application in 2015 1.3.2 Electric Vehicles 1.3.3 High-Capacity Networks 1.3.4 Industrial Applications 1.4 High-voltage MOSFET Market by Region 1.4.1 North America Status and Prospect (2011-2021) 1.4.2 Europe Status and Prospect (2011-2021) 1.4.3 China Status and Prospect (2011-2021) 1.4.4 Japan Status and Prospect (2011-2021) 1.4.5 Korea Status and Prospect (2011-2021) 1.4.6 Taiwan Status and Prospect (2011-2021) 1.5 Global Market Size (Value) of High-voltage MOSFET (2011-2021) 2 Global High-voltage MOSFET Market Competition by Manufacturers 2.1 Global High-voltage MOSFET Production and Share by Manufacturers (2015 and 2016) 2.2 Global High-voltage MOSFET Revenue and Share by Manufacturers (2015 and 2016) 2.3 Global High-voltage MOSFET Average Price by Manufacturers (2015 and 2016) 2.4 Manufacturers High-voltage MOSFET Manufacturing Base Distribution, Sales Area and Product Type 2.5 High-voltage MOSFET Market Competitive Situation and Trends 2.5.1 High-voltage MOSFET Market Concentration Rate 2.5.2 High-voltage MOSFET Market Share of Top 3 and Top 5 Manufacturers 2.5.3 Mergers & Acquisitions, Expansion 3 Global High-voltage MOSFET Production, Revenue (Value) by Region (2011-2016) 3.1 Global High-voltage MOSFET Production by Region (2011-2016) 3.2 Global High-voltage MOSFET Production Market Share by Region (2011-2016) 3.3 Global High-voltage MOSFET Revenue (Value) and Market Share by Region (2011-2016) 3.4 Global High-voltage MOSFET Production, Revenue, Price and Gross Margin (2011-2016) 3.5 North America High-voltage MOSFET Production, Revenue, Price and Gross Margin (2011-2016) 3.6 Europe High-voltage MOSFET Production, Revenue, Price and Gross Margin (2011-2016) 3.7 China High-voltage MOSFET Production, Revenue, Price and Gross Margin (2011-2016) 3.8 Japan High-voltage MOSFET Production, Revenue, Price and Gross Margin (2011-2016) 3.9 Korea High-voltage MOSFET Production, Revenue, Price and Gross Margin (2011-2016) 3.10 Taiwan High-voltage MOSFET Production, Revenue, Price and Gross Margin (2011-2016) 4 Global High-voltage MOSFET Supply (Production), Consumption, Export, Import by Regions (2011-2016) 4.1 Global High-voltage MOSFET Consumption by Regions (2011-2016) 4.2 North America High-voltage MOSFET Production, Consumption, Export, Import by Regions (2011-2016) 4.3 Europe High-voltage MOSFET Production, Consumption, Export, Import by Regions (2011-2016) 4.4 China High-voltage MOSFET Production, Consumption, Export, Import by Regions (2011-2016) 4.5 Japan High-voltage MOSFET Production, Consumption, Export, Import by Regions (2011-2016) 4.6 Korea High-voltage MOSFET Production, Consumption, Export, Import by Regions (2011-2016) 4.7 Taiwan High-voltage MOSFET Production, Consumption, Export, Import by Regions (2011-2016) 5 Global High-voltage MOSFET Production, Revenue (Value), Price Trend by Type 5.1 Global High-voltage MOSFET Production and Market Share by Type (2011-2016) 5.2 Global High-voltage MOSFET Revenue and Market Share by Type (2011-2016) 5.3 Global High-voltage MOSFET Price by Type (2011-2016) 5.4 Global High-voltage MOSFET Production Growth by Type (2011-2016) 6 Global High-voltage MOSFET Market Analysis by Application 6.1 Global High-voltage MOSFET Consumption and Market Share by Application (2011-2016) 6.2 Global High-voltage MOSFET Consumption Growth Rate by Application (2011-2016) 6.3 Market Drivers and Opportunities 6.3.1 Potential Applications 6.3.2 Emerging Markets/Countries 7 Global High-voltage MOSFET Manufacturers Profiles/Analysis 7.1 Fairchild Semiconductor International 7.1.1 Company Basic Information, Manufacturing Base and Its Competitors 7.1.2 High-voltage MOSFET Product Type, Application and Specification 7.1.2.1 Type I 7.1.2.2 Type II 7.1.3 Fairchild Semiconductor International High-voltage MOSFET Production, Revenue, Price and Gross Margin (2015 and 2016) 7.1.4 Main Business/Business Overview 7.2 Infineon Technologies AG 7.2.1 Company Basic Information, Manufacturing Base and Its Competitors 7.2.2 High-voltage MOSFET Product Type, Application and Specification 7.2.2.1 Type I 7.2.2.2 Type II 7.2.3 Infineon Technologies AG High-voltage MOSFET Production, Revenue, Price and Gross Margin (2015 and 2016) 7.2.4 Main Business/Business Overview 7.3 International Rectifier 7.3.1 Company Basic Information, Manufacturing Base and Its Competitors 7.3.2 High-voltage MOSFET Product Type, Application and Specification 7.3.2.1 Type I 7.3.2.2 Type II 7.3.3 International Rectifier High-voltage MOSFET Production, Revenue, Price and Gross Margin (2015 and 2016) 7.3.4 Main Business/Business Overview 7.4 Renesas Electronics 7.4.1 Company Basic Information, Manufacturing Base and Its Competitors 7.4.2 High-voltage MOSFET Product Type, Application and Specification 7.4.2.1 Type I 7.4.2.2 Type II 7.4.3 Renesas Electronics High-voltage MOSFET Production, Revenue, Price and Gross Margin (2015 and 2016) 7.4.4 Main Business/Business Overview 7.5 Toshiba Corp. 7.5.1 Company Basic Information, Manufacturing Base and Its Competitors 7.5.2 High-voltage MOSFET Product Type, Application and Specification 7.5.2.1 Type I 7.5.2.2 Type II 7.5.3 Toshiba Corp. High-voltage MOSFET Production, Revenue, Price and Gross Margin (2015 and 2016) 7.5.4 Main Business/Business Overview 7.6 Vishay Intertechnology Inc. 7.6.1 Company Basic Information, Manufacturing Base and Its Competitors 7.6.2 High-voltage MOSFET Product Type, Application and Specification 7.6.2.1 Type I 7.6.2.2 Type II 7.6.3 Vishay Intertechnology Inc. High-voltage MOSFET Production, Revenue, Price and Gross Margin (2015 and 2016) 7.6.4 Main Business/Business Overview 7.7 Diodes Inc. 7.7.1 Company Basic Information, Manufacturing Base and Its Competitors 7.7.2 High-voltage MOSFET Product Type, Application and Specification 7.7.2.1 Type I 7.7.2.2 Type II 7.7.3 Diodes Inc. High-voltage MOSFET Production, Revenue, Price and Gross Margin (2015 and 2016) 7.7.4 Main Business/Business Overview 7.8 NXP Semiconductors N.V. 7.8.1 Company Basic Information, Manufacturing Base and Its Competitors 7.8.2 High-voltage MOSFET Product Type, Application and Specification 7.8.2.1 Type I 7.8.2.2 Type II 7.8.3 NXP Semiconductors N.V. High-voltage MOSFET Production, Revenue, Price and Gross Margin (2015 and 2016) 7.8.4 Main Business/Business Overview 7.9 On Semiconductor Corp. 7.9.1 Company Basic Information, Manufacturing Base and Its Competitors 7.9.2 High-voltage MOSFET Product Type, Application and Specification 7.9.2.1 Type I 7.9.2.2 Type II 7.9.3 On Semiconductor Corp. High-voltage MOSFET Production, Revenue, Price and Gross Margin (2015 and 2016) 7.9.4 Main Business/Business Overview 7.10 Rohm Co. Ltd 7.10.1 Company Basic Information, Manufacturing Base and Its Competitors 7.10.2 High-voltage MOSFET Product Type, Application and Specification 7.10.2.1 Type I 7.10.2.2 Type II 7.10.3 Rohm Co. Ltd High-voltage MOSFET Production, Revenue, Price and Gross Margin (2015 and 2016) 7.10.4 Main Business/Business Overview 7.11 STMicroelectronics N.V 8 High-voltage MOSFET Manufacturing Cost Analysis 8.1 High-voltage MOSFET Key Raw Materials Analysis 8.1.1 Key Raw Materials 8.1.2 Price Trend of Key Raw Materials 8.1.3 Key Suppliers of Raw Materials 8.1.4 Market Concentration Rate of Raw Materials 8.2 Proportion of Manufacturing Cost Structure 8.2.1 Raw Materials 8.2.2 Labor Cost 8.2.3 Manufacturing Expenses 8.3 Manufacturing Process Analysis of High-voltage MOSFET 9 Industrial Chain, Sourcing Strategy and Downstream Buyers 9.1 High-voltage MOSFET Industrial Chain Analysis 9.2 Upstream Raw Materials Sourcing 9.3 Raw Materials Sources of High-voltage MOSFET Major Manufacturers in 2015 9.4 Downstream Buyers Get it now @ https://www.wiseguyreports.com/checkout?currency=one_user-USD&report_id=743479


News Article | March 8, 2016
Site: www.greentechmedia.com

Google’s Little Box Challenge, the 19-month quest to give away $1 million to the company that can pack the most power density per square inch into a solar inverter, announced its grand prize and runners-up last week. And if the test results from the contest are any guide, winner CE+T Power has more than met Google’s big -- or, shall we say, small -- expectations. The Belgian company’s Red Electrical Devils, named after the country's national soccer team, manage to pack 142.9 watts per square inch into a box 14 cubic inches in size. That’s nearly three times Google's minimum 50-watts-per-square-inch power density requirement, and about 10 times as power-dense as today’s commercially available models, Google said in a blog post at last week’s ARPA-E Innovation Summit outside Washington D.C. CE+T used a combination of gallium nitride (GaN) semiconductors, soft-switching techniques, and thermal management innovations to keep its 2-kilowatt inverters delivering power efficiently over 100 hours of testing at the Energy Department’s National Renewable Energy Laboratory (NREL). So did honorable-mention-winning inverters from Schneider Electric and a team from Virginia Polytechnic Institute’s Future Energy Electronics Center. Both beat Google’s power density and size thresholds handily, as this chart indicates. If nothing else, these kinds of figures help show the promise of the next generation of wide-bandgap semiconductors such as gallium arsenide (GaN) and silicon carbide (SiC). Backed by hundreds of millions of dollars in venture capital and DOE grant funding, companies such as CE+T partner GaN Systems, Infineon-acquired International Rectifier, and Google Ventures-backed Transphorm are building transistors out of these materials, which can operate more efficiently than silicon, although at higher cost, at least today. That could help shrink and cool the insulated-gate bipolar transistors (IGBTs) and metal oxide field-effect transistors (MOSFETs) that are used in today’s solar inverters. CE+T described the benefits and challenges of GaN-based inverters in its technical approach document: GaN transistors have many very interesting electrical characteristics (low R , low Q and Cds, ultra low Q ); these create technological advantages over current MOSFET and IGBT devices (small size and low production costs). Unfortunately, they also have serious drawbacks due to their very fast switching characteristics: they are challenging to drive and require sensitive electromagnetic noise management. Another pitfall is the high voltage drop due to the reverse current when the GaN is turned off. CE+T manages these problems through the use of a “five legs topology” to reduce energy transfer within the inverter, as well as fine-tuned control via “soft switching operation of all GaN devices while minimizing reverse currents.” To reduce waste heat, “cooling is provided by the air flow of the fan and by use of an aluminum oxide foil placed in the middle of the ferrite to create the requested air gap plus a thermal drain.” Virginia Tech’s technical documents cited wide-bandgap semiconductors, “like Transphorm’s TPH3002LD and Cree’s C3D1P7060Q employed in the DC/DC stage and GaN Systems’ GS66516T in the DC/AC stage,” noting that they allow for “higher power density, greater efficiency, and faster switching than conventional silicon devices.” Silicon carbide (SiC) transistors, such as those provided to Little Box challengers by ST Micro, are another wide-bandgap material with promise to pack much more efficient power conversion technologies inside smaller packages. Schneider Electric’s technical document notes that, after looking at both GaN and SiC components, “the final choice was to use SiC MOSFETs with TO247 package, which proved to be best in terms of component ruggedness, thermal management, gate driving and EM interference.” GaN and SiC devices are “certainly part of the roadmap for more efficient, less costly solar inverters,” according to MJ Shiao, solar research director for GTM Research. Commercial products are being developed, he said, citing the work going on between Transphorm and partners like Yaskawa and Enphase and Tata to build GaN-based solar inverters. As for building a commercial-scale business on these novel semiconductors, however, “The issue, as always, is scale, track record, cost and diversity of suppliers,” Shiao said. Most of today’s inverters are already highly efficient, losing only a few percentage points of power in DC-to-AC conversion. Google got more than 2,000 entrants after it launched the contest in mid-2014, and picked a list of 18 finalists in October, including universities, research organizations and a host of startups. All finalists’ technical approach documents will be posted on the Little Box Challenge website through the end of 2017, Google said. Google has been quietly working on power electronics development outside the Little Box Challenge. Last week’s announcement didn’t say exactly what the company intends to do next with the technologies it’s unearthed and rewarded, besides noting, “We hope this helps advance the state of the art and innovation in kW-scale inverters.” Here’s a GTM Research breakdown of the power electronics inside inverters, and how GaN and SiC devices could fit into the current market landscape.


Tjokrorahardjo A.,International Rectifier
Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC | Year: 2010

Compact Fluorescent Lamp (CFL) and Light Emitting Diode (LED) are energy efficient light sources. However, they have a disadvantage that they cannot be directly dimmed with a triac dimmer. This article briefly explains the incompatibility issues, and suggests a CFL ballast circuit to overcome this disadvantage. The ballast is based on resonant mode topology, with additional circuitry for triac interface and dimming control. Furthermore, this article also presents, with few modifications to the CFL ballast circuit, an LED driver circuit that is dimmable with triac dimmer. Experimental results show that both proposed circuits are able to be dimmed down close to 10% of the light output. ©2010 IEEE.


Patent
International Rectifier | Date: 2015-02-11

There are disclosed herein various implementations of semiconductor structures including III-Nitride interlayer modules. One exemplary implementation comprises a substrate and a first transition body over the substrate. The first transition body has a first lattice parameter at a first surface and a second lattice parameter at a second surface opposite the first surface. The exemplary implementation further comprises a second transition body, such as a transition module, having a smaller lattice parameter at a lower surface overlying the second surface of the first transition body and a larger lattice parameter at an upper surface of the second transition body, as well as a III-Nitride semiconductor layer over the second transition body. The second transition body may consist of two or more transition modules, and each transition module may include two or more interlayers. The first and second transition bodies reduce strain for the semiconductor structure.

Loading International Rectifier collaborators
Loading International Rectifier collaborators