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Patent
Globalfoundries and International Business Machines Corporation YT | Date: 2012-09-12

An epitaxial Ni silicide film that is substantially non-agglomerated at high temperatures, and a method for forming the epitaxial Ni silicide film, is provided. The Ni silicide film of the present disclosure is especially useful in the formation of ETSOI (extremely thin silicon-on-insulator) Schottky junction source/drain FETs. The resulting epitaxial Ni silicide film exhibits improved thermal stability and does not agglomerate at high temperatures.


Patent
International Business Machines Corporation YT | Date: 2012-09-14

A semiconductor device is formed by first providing a dual gate semiconductor device structure having FET pair precursors, which includes an nFET precursor and a pFET precursor, wherein each of the nFET precursor and the pFET precursor includes a dummy gate structure. At least one protective layer is deposited across the FET pair precursors, leaving the dummy gate structures exposed. The dummy gate structure is removed from one of the nFET precursor and the pFET precursor to create therein one of an nFET gate hole and a pFET gate hole, respectively. A fill is deposited into the formed one of the nFET gate hole and the pFET gate.


Patent
International Business Machines Corporation YT | Date: 2012-09-14

A semiconductor device includes a substrate and a gate stack disposed on the substrate. An upper layer of the gate stack is a metal gate conductor and a lower layer of the gate stack is a gate dielectric. A gate contact is in direct contact with the metal gate conductor.


Patent
International Business Machines Corporation YT | Date: 2012-09-14

A semiconductor device includes a substrate having at least one nitride material lined isolation cavity; and a hafnium containing dielectric fill at least partially contained in and at least partially covering at least a portion of the at least one nitride lined isolation cavity.

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