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Richardson, TX, United States

Grant
Agency: Department of Defense | Branch: Missile Defense Agency | Program: SBIR | Phase: Phase I | Award Amount: 100.00K | Year: 2011

This Phase I SBIR effort will seek to develop high performance superlattice infrared focal plane array technology by establishing a 4"GaSb substrate manufacturing line based in Texas. Under this program, IntelliEPI proposes to develop 4"GaSb crystal pulling capability based on the vertical gradient freeze method. In addition, a double-side polishing capacity for GaSb up to 4"in diameter will be established. This will provide a supply of high-quality, large diameter substrates to support epitaxial growth development.


Grant
Agency: Department of Defense | Branch: Missile Defense Agency | Program: SBIR | Phase: Phase I | Award Amount: 100.00K | Year: 2011

This Phase I SBIR effort will develop robust and high performance infrared detector technology based on GaSb-based Type II strained-layer superlattices (SLS). The advanced device design will be based on the Naval Research Lab (NRL) W-barrier and Ternary absorber epitaxy materials system. The detector design will focus on the two-color LW/LW for interceptor seeker application. The SLS detector design efforts will be done jointly with NRL and QmagiQ. The Sb-based SLS MBE will be grown at IntelliEPI epi foundry using proprietary in-situ tools to fully characterize and optimize the growth. Device fabrication and testing will be done by QmagiQ.


Grant
Agency: National Aeronautics and Space Administration | Branch: | Program: SBIR | Phase: Phase II | Award Amount: 750.00K | Year: 2016

This Phase II SBIR proposes to further develop high performance (low dark current, high quantum efficiency, and low NEdT) infrared epitaxy materials based on Type II Strained Layer Superlattice (SLS) for large format space-based sensor applications. The epi materials will be grown with Sb-capable multi-wafer production Molecular Beam Epitaxy (MBE) reactor at IntelliEPI IR. The initial goal includes achieving QE of at least 40% with LWIR spectral wavelength band near 12 um. The SLS detector design will be developed in consultation with the infrared detector group at JPL to ensure that this effort addresses NASA needs. In the superlattice engineered structure, many detector properties are determined once epitaxial growth is completed. The technical approach will be to develop improved epitaxial stack design with a goal to dramatically improve detector properties. This is based on existing high performance GaSb-based type-II SLS detector growth technology, with novel design, development of MBE growth to implement the design, and fabrication and characterization of devices from the epi grown material. The objective is to dramatically improve quantum efficiency in the detector structure. The Phaqse II effort will focus on FPA demonstration.


Grant
Agency: Department of Defense | Branch: Missile Defense Agency | Program: SBIR | Phase: Phase I | Award Amount: 100.00K | Year: 2010

This Phase I SBIR effort will develop low dark-current and high radiation-hardness infrared detector technology based on unipolar barrier structure Type II strained-layer superlattices. The design architectures and process technologies developed to minimize dark current are expected to enhance device performance, especially in the presence of the degradation mechanisms anticipated in a hostile radiation environment. The rad-hard SLS design efforts will be done by leading experts at the University of New Mexico (UNM) and Raytheon Vision Systems (RVS). The advanced Sb-based SLS MBE will be done by IntelliEPI using proprietary in-situ tools to characterize and optimize the growth. Device fabrication and testing will be done by UNM and RVS, with radiation exposure performed by Air Force Research Laboratory, Kirtland Air Force base.


Grant
Agency: National Aeronautics and Space Administration | Branch: | Program: SBIR | Phase: Phase I | Award Amount: 125.00K | Year: 2015

This Phase I SBIR proposes to further develop high performance (low dark current, high quantum efficiency, and low NEdT) infrared epitaxy materials based on Type II Strained Layer Superlattice (SLS) for large format space-based sensor applications. The epi materials will be grown with Sb-capable multi-wafer production Molecular Beam Epitaxy (MBE) reactor at IntelliEPI IR. The initial goal includes achieving QE of at least 40% with LWIR spectral wavelength band near 12 um. The SLS detector design will be developed in consultation with the infrared detector group at JPL to ensure that this effort addresses NASA needs. In the superlattice engineered structure, many detector properties are determined once epitaxial growth is completed. The technical approach will be to develop improved epitaxial stack design with a goal to dramatically improve detector properties. This is based on existing high performance GaSb-based type-II SLS detector growth technology, with novel design, development of MBE growth to implement the design, and fabrication and characterization of devices from the epi grown material. The objective is to dramatically improve quantum efficiency in the detector structure.

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