Richardson, TX, United States
Richardson, TX, United States

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Grant
Agency: National Aeronautics and Space Administration | Branch: | Program: SBIR | Phase: Phase II | Award Amount: 337.50K | Year: 2012

This Phase II SBIR proposes to develop high quantum efficiency (QE) and low dark current infrared epitaxy materials based on Type II Strained Layer Superlattice (SLS) for space-based sensor applications. The epi materials will be grown with Sb-capable multi-wafer production Molecular Beam Epitaxy (MBE) reactor at IntelliEPI. The initial goal includes achieving QE of at least 50% with MWIR spectral wavelength band in the 2.5 to 12 um, and possibly beyond. The SLS detector design will be done in collaboration with Dr. Sarath Gunapla's infrared device group at JPL to ensure that the effort addresses NASA needs. Advanced structure design incorporating barriers will be used to reduce dark current. If successful, a Focal Plane Array may be fabricated during Phase II.


Grant
Agency: Department of Defense | Branch: Missile Defense Agency | Program: SBIR | Phase: Phase I | Award Amount: 100.00K | Year: 2012

This Phase I SBIR effort will develop robust and high performance infrared detector technology based on GaSb-based Type II strained-layer superlattices (SLS). The epitaxy development effort will focus on improving QE, reducing dark current, and reducing defects. The device design will be based on the NASA-JPL CBIRD structure. Advanced dual-band LW/LW design based on CBIRD will also be explored.


Grant
Agency: Department of Defense | Branch: Missile Defense Agency | Program: SBIR | Phase: Phase II | Award Amount: 1.00M | Year: 2012

This Phase II SBIR effort will develop high performance infrared detector arrays for MDA space applications using advanced barrier structure type-II superlattices based on GaSb. The epitaxy development will increase performance (QE, low dark current) with design iterations of NRL hybrid superlattice barrier structures for single-color large-format LWIR and two-color FPA.


Grant
Agency: Department of Energy | Branch: | Program: SBIR | Phase: Phase I | Award Amount: 150.00K | Year: 2012

IIIV super latticebased detectors incorporating antimony allow highperformance infrared detection in key midwave (5m) to beyond long wave (10m) wavelengths. Overcoming technical challenges related to the epitaxial growth will enable a large cost reduction and performance boost to remote sensing in the infrared. This effort will focus on defect reduction in strainedlayer super lattice (SLS) detectors to improve focalplane array (FPA) pixel operability imaging performance. The SLS consist of Sbbased IIIV materials to be grown using molecular beam epitaxy (MBE) technology on GaSb substrates. The detector epi materials development and optimization will be performed in stateoftheart Sbcapable multiwafer production MBE reactors. The detector epi materials for FPA application will be evaluated in conjunction with our collaborators at Raytheon Vision Systems (RVS) and L3 Communications Cincinnati Electronics (L3CE). Baseline SLS materials with InAs/GaSb super lattices as well as novel Ga free InAs/InAsSb super lattices will be explored. The InAs/InAsSb materials system has shown promising results grown via MOCVD1. With MBE technology, much sharper interfaces can be realized and at lower background doping. The Gafree approach could further reduce defect by avoiding defects associated with Ga droplets from Gabased MBEgrown layers. With success of the phase I effort in high quality lowdefect materials, multiwafer MBE foundry capacity allows rapid scaleup to commercial volumes.


Grant
Agency: National Aeronautics and Space Administration | Branch: | Program: SBIR | Phase: Phase I | Award Amount: 125.00K | Year: 2014

This Phase I SBIR proposes to develop high performance (low dark current, high quantum efficiency, and low NEdT) infrared epitaxy materials based on Type II Strained Layer Superlattice (SLS) for large format space-based sensor applications. The epi materials will be grown with Sb-capable multi-wafer production Molecular Beam Epitaxy (MBE) reactor at IntelliEPI-IR. The initial goal includes achieving QE of at least 30% with LWIR spectral wavelength band near 12 μm. The SLS detector design will be done in collaboration with Dr. Sarath Gunapla's infrared device group at JPL to ensure that the effort addresses NASA needs. Successful device architecture shorter wavlengths will be evolved to longer wave large-format application. If successful, a Focal Plane Array may be fabricated during Phase II.


Grant
Agency: National Aeronautics and Space Administration | Branch: | Program: SBIR | Phase: Phase II | Award Amount: 750.00K | Year: 2016

This Phase II SBIR proposes to further develop high performance (low dark current, high quantum efficiency, and low NEdT) infrared epitaxy materials based on Type II Strained Layer Superlattice (SLS) for large format space-based sensor applications. The epi materials will be grown with Sb-capable multi-wafer production Molecular Beam Epitaxy (MBE) reactor at IntelliEPI IR. The initial goal includes achieving QE of at least 40% with LWIR spectral wavelength band near 12 um. The SLS detector design will be developed in consultation with the infrared detector group at JPL to ensure that this effort addresses NASA needs. In the superlattice engineered structure, many detector properties are determined once epitaxial growth is completed. The technical approach will be to develop improved epitaxial stack design with a goal to dramatically improve detector properties. This is based on existing high performance GaSb-based type-II SLS detector growth technology, with novel design, development of MBE growth to implement the design, and fabrication and characterization of devices from the epi grown material. The objective is to dramatically improve quantum efficiency in the detector structure. The Phaqse II effort will focus on FPA demonstration.


Grant
Agency: National Aeronautics and Space Administration | Branch: | Program: SBIR | Phase: Phase I | Award Amount: 100.00K | Year: 2011

This Phase I SBIR proposes to develop high quantum efficiency (QE) and low dark current infrared epitaxy materials based on Type II Strained Layer Superlattice (SLS) for space-based sensor applications. The epi materials will be grown with Sb-capable multi-wafer production Molecular Beam Epitaxy (MBE) reactor at IntelliEPI. The initial goal includes achieving QE of at least 50% with MWIR spectral wavelength band in the 2.5 to 5 um. The SLS detector design will be done in collaboration with Dr. Sarath Gunapla's infrared device group at JPL to ensure that the effort addresses NASA needs. Advanced structure design incorporating barriers will be used to reduce dark current. If successful, a Focal Plane Array may be fabricated during Phase II.


Grant
Agency: National Aeronautics and Space Administration | Branch: | Program: SBIR | Phase: Phase I | Award Amount: 125.00K | Year: 2015

This Phase I SBIR proposes to further develop high performance (low dark current, high quantum efficiency, and low NEdT) infrared epitaxy materials based on Type II Strained Layer Superlattice (SLS) for large format space-based sensor applications. The epi materials will be grown with Sb-capable multi-wafer production Molecular Beam Epitaxy (MBE) reactor at IntelliEPI IR. The initial goal includes achieving QE of at least 40% with LWIR spectral wavelength band near 12 um. The SLS detector design will be developed in consultation with the infrared detector group at JPL to ensure that this effort addresses NASA needs. In the superlattice engineered structure, many detector properties are determined once epitaxial growth is completed. The technical approach will be to develop improved epitaxial stack design with a goal to dramatically improve detector properties. This is based on existing high performance GaSb-based type-II SLS detector growth technology, with novel design, development of MBE growth to implement the design, and fabrication and characterization of devices from the epi grown material. The objective is to dramatically improve quantum efficiency in the detector structure.


Grant
Agency: National Aeronautics and Space Administration | Branch: | Program: SBIR | Phase: Phase II | Award Amount: 750.00K | Year: 2015

This Phase II SBIR proposes to further develop high performance (low dark current, high quantum efficiency, and low NEdT) infrared epitaxy materials based on Type II Strained Layer Superlattice (SLS) for large format space-based sensor applications. The epi materials will be grown with Sb-capable multi-wafer production Molecular Beam Epitaxy (MBE) reactor at IntelliEPI-IR. The initial goal includes achieving QE of at least 40% with LWIR spectral wavelength band near 12 ?m. The SLS detector design will be developed in consultation with the infrared detector group at JPL to ensure that this effort addresses NASA needs. Materials for prototype high-performance LWIR Focal Plane Array (FPA) will be demonstrated during the Phase II effort.


Grant
Agency: Department of Defense | Branch: Army | Program: SBIR | Phase: Phase I | Award Amount: 100.00K | Year: 2015

The goal of the present work is to develop high performance long-wave infrared (LWIR) detectors based on III-V type-II superlattice (T2SL) technology by realistic models of device structures incorporating epitaxial growth parameters. IntelliEPI IR will develop growth methodology for characterization and control of nonidealities impacting SRH dark current and lifetime. The GaSb-based epi materials will be grown by IntelliEPI IR with multi-wafer production molecular beam epitaxy (MBE) reactors. The T2SL detector design will be developed in consultation with the infrared detector group at JPL.

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