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Liu T.-C.,National Chiao Tung University | Chen C.,National Chiao Tung University | Chiu K.-J.,Integrated Service Technology Inc. | Lin H.-W.,National Chiao Tung University | Kuo J.-C.,National Cheng Kung University
Materials Characterization | Year: 2012

We proposed a novel technique developed from focused ion beam (FIB) polishing for sample preparation of electron backscatter diffraction (EBSD) measurement. A low-angle incident gallium ion beam with a high acceleration voltage of 30 kV was used to eliminate the surface roughness of cross-sectioned microbumps resulting from mechanical polishing. This work demonstrates the application of the FIB polishing technique to solders for a high-quality sample preparation for EBSD measurement after mechanical polishing. © 2012 Elsevier Inc. All rights reserved. Source


Huang L.-T.,National Taiwan University | Chang M.-L.,Integrated Service Technology Inc. | Huang J.-J.,National Taiwan University | Kuo C.-L.,National Taiwan University | And 5 more authors.
Journal of Physics D: Applied Physics | Year: 2013

The structural and electrical characteristics of hafnium oxide (HfO2) gate dielectrics treated by a variety of post-deposition nitridation processes, including remote N2, N2/H2 and NH3 plasma, are presented by the x-ray photoelectron spectroscopy (XPS), high-resolution transmission electron microscopy and electrical measurements. The XPS measurement reveals that the nitrogen content in the HfO2 thin film treated by remote nitrogen and hydrogen plasma is higher than that treated only by remote nitrogen plasma, suggesting that the hydrogen has the capability to facilitate nitrogen dissociation. An ultra-thin interfacial layer (IL) thickness (∼0.3 nm), a high dielectric constant (20), an acceptable gate leakage current density (∼9 × 10-6 A cm-2), and a low capacitance equivalent thickness (1.9 nm) of the HfO2 gate dielectric were achieved by the post-deposition remote NH3 plasma nitridation treatment. However, an IL layer as thick as 1.5 nm was observed in the sample treated only by remote N2 plasma. The results indicate that the participation of hydrogen in the nitridation process is a promising way to improve the electrical properties of HfO2 gate dielectrics. © 2013 IOP Publishing Ltd. Source


Chen C.,Integrated Service Technology Inc.
Proceedings of Technical Papers - International Microsystems, Packaging, Assembly, and Circuits Technology Conference, IMPACT | Year: 2012

Creep Corrosion is the common factor to cause electronic products failed. Cloud Computing is getting more and more popular in recent years so people's daily life correlate closely to Cloud Computing. Many global companies built the huge data center in different countries. The challenges Cloud Computing facing are Transmission Technology, Cooling System, Energy Consumption and Air Pollution. Also, Creep Corrosion is a big concern to Cloud Computing. In this study, creep corrosion occurrence on IC Package is investigated. © 2012 IEEE. Source


Liu T.-C.,National Chiao Tung University | Chen C.,National Chiao Tung University | Liu S.-T.,Integrated Service Technology Inc. | Chang M.-L.,Integrated Service Technology Inc. | Lin J.,Integrated Service Technology Inc.
Journal of Materials Science: Materials in Electronics | Year: 2011

As packaging technology advances to wafer level chip scale packaging (WLCSP) to enable reduced chip size and manufacturing cost, circuit edit has become a critical issue for the fully packaged integrated circuits (ICs). These advanced package types cannot be rebuilt on a single chip; therefore, function testing after circuit edit of WLCSP faces challenges. Furthermore, there are routings at the redistribution layer of WLCSP ICs. Circuit edit was applied on both the chip and the package level. In this paper the focused ion beam was applied to mill the organic material of the package structure to expose underlying ICs, instead of chemically destroying the packaging. Metal line cutting and conductive path deposition were also developed by a beam-based technique. These new approaches make the direct edit of electrical circuitry possible not only in ICs but also at package level. Therefore, for the debug process and for failure analysis, the WLCSP ICs have negligible damage and negligible signal integrity loss by retaining the original packaging structure. © 2011 Springer Science+Business Media, LLC. Source


Huang C.-A.,Integrated Service Technology Inc. | Chuang L.,Integrated Service Technology Inc. | Hsu K.,Integrated Service Technology Inc. | Chung S.,Richtek Technology Corporation | Chan T.,Richtek Technology Corporation
Proceedings - International Symposium on Quality Electronic Design, ISQED | Year: 2015

This paper demonstrates a novel physical failure analysis (PFA) solution of MEMS motion sensor to inspect the fusion bonding interface between MEMS motion sensor proof-mass and oxide layer to locate defect points. This analytical study shows successful etching solution removal of MEMS motion sensor proof-mass and inspection of defect points. © 2015 IEEE. Source

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