Emel'Yanenko Yu.S.,National Academy of Sciences of Belarus |
Kolos V.V.,NPO Integral |
Markevich M.I.,National Academy of Sciences of Belarus |
Chaplanov A.M.,National Academy of Sciences of Belarus |
Stel'Makh V.F.,Belarusian State University
Journal of Optical Technology (A Translation of Opticheskii Zhurnal) | Year: 2010
The optical properties of the Au/TiSi2(C49) /Si n-type/Si system, formed by rapid heat treatment, have been investigated. It is shown that the maximum spectral sensitivity occurs in the 750-nm region. The maximum sensitivity reaches 35 mA/W in the 750-800-nm wavelength region. It is concluded that, based on the given structure, which is completely compatible with known technology used for implementing semiconductor devices based on silicon (silicon technology), it is possible to create a photodetector that is sensitive in the 350-1050-nm region. © 2010 Optical Society of America.
Brinkevich D.I.,Belarusian State University |
Odzhaev V.B.,Belarusian State University |
Petlitskii A.N.,NPO Integral |
Prosolovich V.S.,Belarusian State University
Russian Microelectronics | Year: 2011
Properties of silicon (M-Si) prepared by the Czochralski growth technique in a vertical magnetic field of 0.05 T applied to a melt are studied by measuring IR absorption spectra, microindentation, and selective etching. The effect of increasing the concentration of interstitial oxygen upon the thermal treatment of M-Si is found. It is shown that microhardness of M-Si is higher than that of silicon grown by the traditional Czochralski technique by ~8%. The features in the behavior of M-Si are attributed to the formation of oxygen-containing defect-impurity complexes during the growth. Upon thermal treatment at 900°C in the hydrogen flow, these complexes decompose with the extraction of interstitial oxygen, which suppresses thermal hardening typical of the silicon single crystals grown by the traditional Czochralski technique. © Pleiades Publishing, Ltd., 2011.