Blynskii V.I.,B. I. Stepanov Institute of Physics |
Bozhatkin O.A.,Integral NPO |
Golub E.S.,Integral NPO |
Lemeshevskaya A.M.,Integral NPO |
Shvedov S.V.,Integral NPO
Journal of Applied Spectroscopy | Year: 2010
We examine the results of an effect of preliminary annealing on the spectral sensitivity of photodetectors in bipolar integrated circuits, formed in silicon grown by the Czochralski method. We demonstrate the possibility of substantially improving the sensitivity of photodetectors in the infrared region of the spectrum with twostep annealing. The observed effect is explained by participation of oxidation in the gettering process, where oxidation precedes formation of a buried n + layer in the substrate. © 2010 Springer Science+Business Media, Inc.