Institution of Nuclear Energy Research

Taoyuan, Taiwan

Institution of Nuclear Energy Research

Taoyuan, Taiwan

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Fu C.-H.,National Tsing Hua University | Chang-Liao K.-S.,National Tsing Hua University | Tseng W.-H.,National Tsing Hua University | Lu C.-C.,National Tsing Hua University | And 4 more authors.
Microelectronic Engineering | Year: 2011

MOSFET devices with Ge channel and nitridation treatment using plasma immersion ion implantation (PIII) are studied in this work. Experimental results show that the electrical characteristics and reliability of Ge MOSFETs can be significantly improved by PIII nitridation. For instance, the mobility of device with 3 nm Si cap after PIII nitridation is enhanced by about 20%. Although the driving drain current of sample with a thinner Si cap is higher, its reliability property is worse. Regarding the effects of energy in PIII nitridation, the electrical characteristics of the sample with 2 keV are better than that with 1.5 keV. © 2011 Elsevier B.V. All rights reserved.


Fu C.-H.,National Tsing Hua University | Chang-Liao K.-S.,National Tsing Hua University | Wang T.-K.,National Tsing Hua University | Tsai W.F.,Institution of Nuclear Energy Research | Ai C.F.,Institution of Nuclear Energy Research
Microelectronic Engineering | Year: 2010

Nitridation treatments are generally used to enhance the thermal stability and reliability of high-k dielectric. It is observed in this work that, the electrical characteristics of high-k gated MOS devices can be significantly improved by a nitridation treatment using plasma immersion ion implantation (PIII). Equivalent oxide thickness, (EOT) and interface trap density of MOS devices are reduced by a proper PIII treatment. At an identical EOT, the leakage current of devices with PIII nitridation can be reduced by about three orders of magnitude. The optimal process conditions for PIII treatment include nitrogen incorporation through metal gate, ion energy of 2.5 keV, and implantation time of 15 min. © 2009 Elsevier B.V. All rights reserved.


Fu C.-H.,National Tsing Hua University | Chang-Liao K.-S.,National Tsing Hua University | Du L.-W.,National Tsing Hua University | Wang T.-K.,National Tsing Hua University | And 2 more authors.
Solid-State Electronics | Year: 2010

High-k gated metal-oxide-semiconductor devices with SiGe channel and nitridation treatment using plasma immersion ion implantation (PIII) were studied in this work. After metal gate deposited, PIII nitridation treatment was performed at an energy of 2.5 keV for 10 min. Experimental results show that the electrical characteristics of high-k dielectric can be obviously improved by PIII nitridation. For instance, the values of stress-induced leakage are reduced more than 50% and the value of stress-induced flat-band voltage shifts are reduced more than 33%. The equivalent oxide thickness (EOT) value of MOS device with 30% Ge content in SiGe channel and PIII nitridation can be reduced to 9.6 Å. © 2010 Elsevier Ltd. All rights reserved.


Chang-Liao K.-S.,National Tsing Hua University | Fu C.-H.,National Tsing Hua University | Lu C.-C.,National Tsing Hua University | Chang Y.-A.,National Tsing Hua University | And 9 more authors.
ECS Transactions | Year: 2011

The effects of interfacial layer at high-k dielectric/Si substrate formed by using stress-relieved pre-oxide (SRPO) treatment on electrical characteristics of MOS devices were studied in this work. The equivalent oxide thickness value could be scaled with reducing the thickness of the high quality IL. The reliability in terms of stress-induced leakage and stress-induced V fb shift is clearly improved for MOS device with a SRPO treatment. Besides, the constant-voltage stress-induced interface trap generation in MOSFET was measured by charge-pumping techniques. The influences of stress and recovery on devices with HfO2 high-k dielectric are also compared. Results show that the stress induced Vth shifts can be separated into two stages, namely, trap filling and generation. The trap generation stage is only determined by the stress voltage and temperature. ©The Electrochemical Society.


Lu C.-C.,National Tsing Hua University | Chang-Liao K.-S.,National Tsing Hua University | Lu C.-Y.,National Tsing Hua University | Chang S.-C.,National Tsing Hua University | And 3 more authors.
Microelectronics Reliability | Year: 2011

Although charge pumping (CP) is a powerful technique to measure the energy and spatial distributions of interface trap and oxide trap in MOS devices, the parasitic gate leakage current in it is the bottleneck. A CP method was modified and applied to high-k gate dielectric in this work to separate the CP current from the parasitic tunneling component in MOS devices. The stress-induced variations of electrical parameters in high-k gated MOS devices were investigated and the physical mechanism was studied by the modified CP technique. The stress-induced trap generation for devices with HfO 2-dominated high-k gate dielectrics is like mobile defect; while that with SiO2-dominated ones is similar to the near-interface/border trap. © 2011 Elsevier Ltd. All rights reserved.


Lin W.-K.,National Tsing Hua University | Wang J.-R.,Institution of Nuclear Energy Research | Tseng Y.-S.,Institution of Nuclear Energy Research | Shih C.,National Tsing Hua University | Chang J.-E.,National Tsing Hua University
Journal of the Chinese Institute of Engineers, Transactions of the Chinese Institute of Engineers,Series A/Chung-kuo Kung Ch'eng Hsuch K'an | Year: 2013

Recently, insufficient storage room for used fuel at nuclear plants has become a big problem. To solve this problem, many nuclear plants have started to install Spent Fuel Dry Storage Systems. Taiwan Institute of Nuclear Energy Research has started to use the CFD-FLUENT system to analyze and simulate the heat transfer phenomena of Spent Fuel Dry Storage Systems. CFD-FLUENT has a strong calculating function, but on the other hand, it also has disadvantages. For instance, we need to plug thermal properties of materials into a database before we use CFD-FLUENT. However, this CFD-FLUENT data bank is not convenient to build up for the necessary thermal properties of the Spent Fuel Dry Storage System. In addition, those limitations will make the simulating process complicated. The main purpose of this project is to write software which can make the process of plugging properties into the CFD-FLUENT database easier by the use of Visual Basic (version 6.0). In other words, this study is trying to build up a user friendly window operation interface program to enhance the transfer functions and integrate the data in a format that CFD can read easily. Using this user friendly program, the error was less than 10%. © 2013 The Chinese Institute of Engineers.

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