Institute Preparatoire Aux Etudes Dingenieur Of Nabeul Ipein

Nabeul, Tunisia

Institute Preparatoire Aux Etudes Dingenieur Of Nabeul Ipein

Nabeul, Tunisia
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Gaied I.,Institute Preparatoire Aux Etudes Dingenieur Of Nabeul Ipein | Gassoumi A.,National Engineering School of Tunis | Kanzari M.,National Engineering School of Tunis | Yacoubi N.,Institute Preparatoire Aux Etudes Dingenieur Of Nabeul Ipein
Defect and Diffusion Forum | Year: 2010

Sulfosalt SnSb2S4 films have been deposited on glass substrates by thermal evaporation and subsequently thermally annealed in vacuum at temperatures from 100 to 250°C. Below a transition temperature of 140°C, the films are highly resistive with a dominant amorphous component, however above this temperature, the samples exhibit p+-type semiconductor behaviour with a dominant crystalline component. In this work we have studied the thermal and optical properties of these films using the photothermal deflection technique. The thermal properties are determined by comparing the experimental amplitude and phase curves variations versus square root modulation frequency of the photothermal signal to the corresponding theoretical ones. The best theoretical fitting curves are obtained for well-defined values of thermal conductivity and thermal diffusivity. The optical absorption spectrum is obtained by comparing the experimental normalized amplitude of the photothermal signal curves variations versus the wavelength to the corresponding theoretical curves variations versus the optical absorption coefficient. We have determined the energy gap by using the Tock law. From a measure of the sample's resistance, one can deduce the electrical resistivity which may be correlated to the thermal conductivity. © (2010) Trans Tech Publications.


Gaied I.,Institute Preparatoire Aux Etudes Dingenieur Of Nabeul Ipein | Rabeh M.B.,ENIT BP 37 | Rabhi A.,ENIT BP 37 | Kanzari M.,ENIT BP 37 | Yacoubi N.,Institute Preparatoire Aux Etudes Dingenieur Of Nabeul Ipein
Defect and Diffusion Forum | Year: 2010

In this work we describe a method based on the Photothermal Deflection Technique adapted for the determination of thermal properties of thin semiconductor layers deposited on a glass substrate. The sample placed in air is heated thanks a modulated pump uniform beam coming from a halogen lamp. The thermal conductivity and the thermal diffusivity are obtained by comparing the amplitude and phase variations versus square root modulation frequency between the experimental curves and the corresponding theoretical ones. The best coincidence permits to deduce the thermal properties of the sample. © (2010) Trans Tech Publications.


Gaied I.,Institute Preparatoire Aux Etudes Dingenieur Of Nabeul Ipein | Gassoumi A.,ENIT BP 37 | Kanzari M.,ENIT BP 37 | Yacoubi N.,Institute Preparatoire Aux Etudes Dingenieur Of Nabeul Ipein
Defect and Diffusion Forum | Year: 2010

Sulfosalt SnSb2S4 films have been deposited on glass substrates by thermal evaporation and subsequently thermally annealed in vacuum at temperatures from 100 to 250°C. Below a transition temperature of 140°C, the films are highly resistive with a dominant amorphous component, however above this temperature, the samples exhibit p+-type semiconductor behaviour with a dominant crystalline component.In this work we have studied the thermal and optical properties of these films using the photothermal deflection technique. The thermal properties are determined by comparing the experimental amplitude and phase curves variations versus square root modulation frequency of the photothermal signal to the corresponding theoretical ones. The best theoretical fitting curves are obtained for well-defined values of thermal conductivity and thermal diffusivity. The optical absorption spectrum is obtained by comparing the experimental normalized amplitude of the photothermal signal curves variations versus the wavelength to the corresponding theoretical curves variations versus the optical absorption coefficient. We have determined the energy gap by using the Tock law. From a measure of the sample's resistance, one can deduce the electrical resistivity which may be correlated to the thermal conductivity. © (2010) Trans Tech Publications.


Gaied I.,Institute Preparatoire Aux Etudes Dingenieur Of Nabeul Ipein | Gassoumi A.,ENIT BP 37 | Kanzari M.,ENIT BP 37 | Yacoubi N.,Institute Preparatoire Aux Etudes Dingenieur Of Nabeul Ipein
Journal of Physics: Conference Series | Year: 2010

The thermo-physical properties of sulfosalt SnSb2S4 thin films deposited at two different glass substrate temperatures by Thermal Evaporation were investigated using the Photothermal Deflection method in its uniform heating case instead of traditionally a non uniform heating one. The advantage of applying this method in this way lies in its simplicity and its sensitivity to both thermal conductivity and thermal diffusivity. These films undergo abrupt changes in thermal properties on both sides of the transition temperature of 140°C which may be show the influence of the substrate temperature on thermal properties of the material. © 2010 IOP Publishing Ltd.


Gaied I.,Institute Preparatoire Aux Etudes Dingenieur Of Nabeul Ipein | Lassoued S.,Institute Preparatoire Aux Etudes Dingenieur Of Nabeul Ipein | Genty F.,CNRS Electronic Systems Institute | Yacoubi N.,Institute Preparatoire Aux Etudes Dingenieur Of Nabeul Ipein
Defect and Diffusion Forum | Year: 2010

In this paper, we present a new Photothermal Deflection Technique (PTD) to determine thermal properties of bulk doped or undoped semiconductor such as GaAs, GaSb, InAs, etc. The method proposed here consists in covering the sample with a thin graphite layer in order to increase the photothermal signal and to ovoid any reflection on the sample surface. This method deals with the analysis of the logarithm of amplitude and phase variation of the photothermal signal versus square root modulation frequency where the sample placed in air is heated by a modulated light beam coming from a halogen lamp. So the best coincidence between experimental curves and corresponding theoretical ones gives simultaneously the best values of thermal conductivity and thermal diffusivity of the sample. These obtained values are in good agreement with those found in literature. The advantage of applying this method in this way lies in its simplicity and its sensibility to both thermal conductivity and thermal diffusivity. © (2010) Trans Tech Publications.


Gaied I.,Institute Preparatoire Aux Etudes Dingenieur Of Nabeul Ipein | Ghorbel M.S.,Institute Preparatoire Aux Etudes Dingenieur Of Nabeul Ipein | Yacoubi N.,Institute Preparatoire Aux Etudes Dingenieur Of Nabeul Ipein
Journal of Physics: Conference Series | Year: 2010

In this study we will describe and compare different methods based on the Photothermal Deflection Technique (PTD) which permits the determination of thermal diffusivity for bulk semiconductors. The two first methods proposed here consist in drawing the experimental amplitude and phase variation of the photothermal signal versus square root modulation frequency. The sample placed in air is heated thanks to a modulated uniform light beam. The difference between these two methods is that in the second one the sample is covered by a thin graphite layer. We notice that the first method is only sensitive to the thermal diffusivity however the second method is sensitive for both thermal diffusivity and thermal conductivity. Finally the third method which is a spectroscopic one and where the sample is immersed in a CCl4 filled cell consists to draw the phase variation of the photothermal signal versus wavelength at a fixed modulation frequency. The phase difference between the two saturated zone (high and low absorption coefficient) is sensitive to the thermal diffusivity. © 2010 IOP Publishing Ltd.

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