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Li X.,Institute Of Semiconductorschinese Academy Of Sciencesno A35 | Zhao D.G.,Institute Of Semiconductorschinese Academy Of Sciencesno A35 | Jiang D.S.,Institute Of Semiconductorschinese Academy Of Sciencesno A35 | Chen P.,Institute Of Semiconductorschinese Academy Of Sciencesno A35 | And 10 more authors.
Physica Status Solidi (A) Applications and Materials Science | Year: 2016

The effects of Al composition in p-type AlGaN electron blocking layer (EBL) on electron leakage and device performance in InGaN-based quantum well (QW) laser diodes (LDs) are numerically investigated in connection with the depth of QWs. It is found that the effectiveness of EBL in blocking electron leakage depends much on Al content in EBL and In content in InGaN QWs. It is effective for low-In-content InGaN QW LDs to add moderate Al in AlGaN EBL, while it is hardly helpful and even harmful for high-In-content InGaN QW LDs to increase Al content. In addition, it is found that too much Al in EBL is unfavorable for all LDs due to the downward conduction band-bending in the last quantum barrier (LQB) layer. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. Source


Chen P.,Institute Of Semiconductorschinese Academy Of Sciencesno A35 | Zhao D.G.,Institute Of Semiconductorschinese Academy Of Sciencesno A35 | Jiang D.S.,Institute Of Semiconductorschinese Academy Of Sciencesno A35 | Zhu J.J.,Institute Of Semiconductorschinese Academy Of Sciencesno A35 | And 8 more authors.
Physica Status Solidi (A) Applications and Materials Science | Year: 2015

In order to enhance the optical confinement and to reduce the vertical electron leakage current of InGaN-based multiple quantum well (MQW) laser diodes, a 2nm GaN/5nm In0.05Ga0.95N composite layer is designed as the last barrier layer between the MQW and AlGaN blocking layer in the p-region. The device simulation shows that the laser diode then has a lower threshold current and a higher output light power under same injection current than the conventional laser diodes without such a composite barrier layer. It is found that the thickness of InGaN has little influence on the P-I characteristic, while the In composition significantly changes the threshold current and output light power properties of laser diodes, which is attributed to the enhanced optical confinement and reduced vertical electron leakage current escaping from active region to p-doped region. The influences of the two parameters to modal gain are analyzed, too. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. Source

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