Institute of Research and Development on Photovoltaic Energy

Chatou, France

Institute of Research and Development on Photovoltaic Energy

Chatou, France
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Duchatelet A.,Institute of Research and Development on Photovoltaic Energy | Savidand G.,Institute of Research and Development on Photovoltaic Energy | Vannier R.N.,CNRS Laboratory of Catalysis and Solid State Chemistry | Chassaing E.,Institute of Research and Development on Photovoltaic Energy | Lincot D.,Institute of Research and Development on Photovoltaic Energy
Journal of Renewable and Sustainable Energy | Year: 2013

One step electrochemical deposition of Cu-In-Ga mixed oxide precursor film on Mo substrate is carried out by potentiostatic method in an acidic nitrate based electrolyte. Deposition parameters, such as ions concentration, deposition time and potential, enable to control accurately the layer composition and thickness. The oxide layer is subsequently transformed into metallic alloy by thermal reduction, and selenized into Cu(In,Ga)Se2 compound. First cell results show conversion efficiency up to 9.4%. © 2013 American Institute of Physics.


Paire M.,Institute of Research and Development on Photovoltaic Energy | Jean C.,Institute of Research and Development on Photovoltaic Energy | Lombez L.,Institute of Research and Development on Photovoltaic Energy | Collin S.,CNRS Optic of Semiconductor nanoStructures Group | And 4 more authors.
Thin Solid Films | Year: 2015

The concentrating approach was applied on Cu(In,Ga)Se2to develop photovoltaic devices with increased efficiency using less rare materials. To withstand the operating conditions, Cu(In,Ga)Se2devices are miniaturized. Compared to previous generations of microcells, with only window layer structuration, microcells with a mesa design are fabricated. These microcells are created by etching ZnO, CdS and Cu(In,Ga)Se2layers. The crucial issue addressed in this study is the electrical behavior of the device edges, to determine if microcells suffer from perimeter recombination. We analyze the influence of different etching techniques on the edge recombination signal. It is found that bromine etch result in well passivated surfaces, and devices as small as 50 × 50 μm do not experience edge recombination efficiency limitations. This behavior is remarkable compared to that of the microcells made of crystalline materials. For devices where the edges are deteriorated by a chemical post-treatment, a quasi-shunting signal coming from the edges is seen. We tested these microcells under concentrated illumination and important open-circuit voltage and efficiency gains are seen. © 2014 Elsevier B.V.

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