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Saucedo E.,Institute Of Recherche Et Developement Sur L Energie Photovoltaique Irdep | Ruiz C.M.,Institute Of Recherche Et Developement Sur L Energie Photovoltaique Irdep | Chassaing E.,Institute Of Recherche Et Developement Sur L Energie Photovoltaique Irdep | Jaime-Ferrer J.S.,Institute Of Recherche Et Developement Sur L Energie Photovoltaique Irdep | And 3 more authors.
Thin Solid Films | Year: 2010

Using structural analyses means of ex-situ Raman spectroscopy and X-ray diffraction combined with electrical measurements, we study the phase evolution in the growth by electrodeposition technique of CuInSe2 on polycrystalline Mo. For this purpose the growth was stopped at different stages, and then the different layers were analysed. First growth steps seem to be controlled by the deposition of secondary phases, like elemental Se and Cu2Se binary. After the deposition of approximately 300 nm of material, CuInSe2 ternary and ordered vacancy compounds start to adequately form. At a thickness close to 2000 nm, the formation of binary CuxSe is observed, remaining up to the final growth process (4350 nm). All these results are compared with the kinetic model of the system under the consideration of the experimental composition evolution. © 2009 Elsevier B.V. All rights reserved. Source

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