Zhang J.,Institute of Polymer Optoelectronic Material and Devices |
Wen S.,Institute of Polymer Optoelectronic Material and Devices |
Zou J.,Institute of Polymer Optoelectronic Material and Devices |
Hu S.,Institute of Polymer Optoelectronic Material and Devices |
And 3 more authors.
Acta Polymerica Sinica | Year: 2010
The thermal properties of polymer light-emitting diode (PLED) was simulated with the light intensity of 1000 cd/m2 by using the thermal structure element in ANSYS finite element analysis software. Temperature distribution, thermal flow distribution and thermal gradient distribution were obtained,the simulation results show that the maximum temperature is in 9,9-dioctylfluorene-co-2,1, 3-benzothiadiazole (PFO-BT) emitting layer of the PLED device, with temperature of 45.968°C, the minimum temperature is at the end of the quartz glass substrate, about 45.95°C; the total thermal resistance is 1305°C/W, but the thermal resistance between polymer light-emitting layer and the end of the quartz glass substrate is only 1°C/W. The thermal properties of PLED devices according to different input powers, substrate materials and substrate thickness were compared. The simulation results indicates that the maximum temperature TH and the device input power P show a good linear relationship; the highest temperature of the PLED device changes slightly with changing quartz glass substrate to borosilicate glass substrate, the cathode side is the main route for heat dissipation; when the substrate thickness increases continuously,the maximum temperature TH increases at the same time,however the minimum temperature TL of PLED device decreases,the total thermal resistance of the PLED device is essentially the same,the thermal resistance between light-emitting layer and the end of quartz glass substrate rises linearly. These results provide a basis for the optimization of PLED devices. Source